Isithwali se-ICP Etch

Isithombe Esifakiwe Sesithwali Se-ICP Etch

Incazelo emfushane:

Indawo Yokuqala:IShayina

Isakhiwo sekristalu:Isigaba se-FCCβ

Ubuningi:3.21 g/cm;

Ubulukhuni:AmaVickers angu-2500;

Usayizi Wezinhlamvu:2 ~ 10μm;

Ukuhlanzeka Kwamakhemikhali:99.99995%;

Umthamo Wokushisa:640J·kg-1·K-1;

Izinga Lokushisa Lokucwiliswa:2700℃;

Amandla e-Felexural:415 Mpa (RT 4-Point);

I-Modulus kaYoung:430 Gpa (ukugoba okungu-4pt, 1300℃);

Ukwanda Kokushisa (i-CTE):4.5 10-6K-1;

Ukuqhuba Ukushisa:300（W/MK）;

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Incazelo Yomkhiqizo

Inkampani yethu inikeza izinsizakalo zenqubo yokumboza i-SiC ngendlela ye-CVD ebusweni be-graphite, izinto zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabela ekushiseni okuphezulu ukuze athole ama-molecule e-SiC ahlanzekile kakhulu, ama-molecule abekwe ebusweni bezinto ezimboziwe, akha ungqimba oluvikelayo lwe-SIC.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana nokushiswa kwe-oxidation kusese kuhle kakhulu lapho izinga lokushisa liphezulu lifinyelela ku-1600 C.

2. Ubumsulwa obuphezulu: okwenziwe ngokufaka umusi wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.

Imininingwane Eyinhloko Yokumboza kwe-CVD-SIC

Izakhiwo ze-SiC-CVD
Isakhiwo sekristalu	Isigaba se-β se-FCC
Ubuningi	g/cm³	3.21
Ubulukhuni	Ubulukhuni bukaVickers	2500
Usayizi Wezinhlamvu	μm	2~10
Ukuhlanzeka Kwamakhemikhali	%	99.99995
Amandla Okushisa	J·kg-1 ·K-1	640
Izinga Lokushisa Lokuthuthwa Kwezinto Ezincane	℃	2700
Amandla e-Felexural	I-MPa (RT-amaphuzu angu-4)	415
I-Young's Modulus	I-Gpa (ukugoba okungu-4pt, 1300℃)	430
Ukwanda Kokushisa (i-CTE)	10-6K-1	4.5
Ukuqhuba kwe-thermal	(W/mK)	300