Mosiyana ndi zipangizo za S1C zomwe zimatsata magetsi amphamvu, mphamvu zambiri, ma frequency ambiri komanso kutentha kwambiri, cholinga chofufuzira cha SiC integrated circuit makamaka ndikupeza magetsi amphamvu kwambiri a ICs control circuit. Popeza magetsi amphamvu a SiC amkati mwamagetsi ndi otsika kwambiri, kotero mphamvu ya microtubules defect idzachepa kwambiri, ichi ndi chidutswa choyamba cha monolithic SiC integrated operational amplifier chip chomwe chatsimikiziridwa, chinthu chomalizidwa chenicheni ndipo chimadziwika ndi zokolola zambiri kuposa zolakwika za microtubules, chifukwa chake, kutengera mtundu wa SiC yield ndi zinthu za Si ndi CaAs ndizosiyana. Chip imachokera ku ukadaulo wa NMOSFET wochepa. Chifukwa chachikulu ndikuti kuyenda kogwira ntchito kwa reverse channel SiC MOSFETs ndi kochepa kwambiri. Kuti muwongolere kuyenda kwa pamwamba pa Sic, ndikofunikira kukonza ndikukonza njira yotenthetsera kutentha kwa Sic.
Yunivesite ya Purdue yachita ntchito yambiri pa ma circuits ophatikizidwa a SiC. Mu 1992, fakitaleyi idapangidwa bwino kutengera ma circuits ophatikizidwa a digito a reverse channel 6H-SIC NMOSFETs. Chip iyi ili ndi ma circuits a gate, on or gate, binary counter, ndi half adder ndipo imatha kugwira ntchito bwino kutentha kwa 25°C mpaka 300°C. Mu 1995, ma MESFET Ics oyamba a SiC plane adapangidwa pogwiritsa ntchito ukadaulo wodzipatula wa vanadium injection. Mwa kuwongolera bwino kuchuluka kwa vanadium yomwe imalowetsedwa, SiC yoteteza imatha kupezeka.
Mu ma circuit a digito, ma circuit a CMOS ndi okongola kwambiri kuposa ma circuit a NMOS. Mu Seputembala 1996, ma circuit oyamba a digito a 6H-SIC CMOS adapangidwa. Chipangizochi chimagwiritsa ntchito injected N-order ndi deposition oxide layer, koma chifukwa cha mavuto ena a process, chip PMOSFETs threshold voltage inali yokwera kwambiri. Mu Marichi 1997 popanga ma circuit achiwiri a SiC CMOS. Ukadaulo wolowetsa P trap ndi thermal growth oxide layer wagwiritsidwa ntchito. Threshold voltage ya PMOSEFTs yomwe imapezeka pokonza process ndi pafupifupi -4.5V. Ma circuit onse pa chip amagwira ntchito bwino kutentha kwa chipinda mpaka 300°C ndipo amayendetsedwa ndi magetsi amodzi, omwe amatha kukhala kuyambira 5 mpaka 15V.
Ndi kusintha kwa mtundu wa wafer wa substrate, ma circuit ophatikizidwa ogwira ntchito bwino komanso opindulitsa kwambiri adzapangidwa. Komabe, pamene mavuto a zinthu za SiC ndi njira zogwirira ntchito athetsedwa, kudalirika kwa chipangizo ndi phukusi kudzakhala chinthu chachikulu chomwe chimakhudza magwiridwe antchito a ma circuit ophatikizidwa a SiC otentha kwambiri.
Nthawi yotumizira: Ogasiti-23-2022