Kev tshawb fawb txog SiC integrated circuit

Txawv ntawm S1C cov khoom siv sib cais uas ua raws li qhov muaj hluav taws xob siab, lub zog siab, zaus siab thiab kub siab, lub hom phiaj tshawb fawb ntawm SiC integrated circuit yog kom tau txais qhov kub siab digital circuit rau lub zog ntse ICs tswj circuit. Raws li SiC integrated circuit rau sab hauv hluav taws xob yog qis heev, yog li qhov cuam tshuam ntawm microtubules defect yuav txo qis heev, qhov no yog thawj daim ntawm monolithic SiC integrated operational amplifier chip tau txheeb xyuas, cov khoom tiav tiag tiag thiab txiav txim siab los ntawm cov txiaj ntsig yog siab dua li microtubules defects, yog li ntawd, raws li SiC yield qauv thiab Si thiab CaAs cov khoom siv yog qhov sib txawv. Lub chip yog raws li depletion NMOSFET technology. Qhov laj thawj tseem ceeb yog tias qhov kev txav mus los ntawm cov neeg nqa khoom ntawm cov channel rov qab SiC MOSFETs qis dhau. Txhawm rau txhim kho qhov kev txav mus los ntawm qhov chaw ntawm Sic, nws yog qhov tsim nyog los txhim kho thiab ua kom zoo dua cov txheej txheem thermal oxidation ntawm Sic.

Purdue University tau ua ntau yam haujlwm ntawm SiC integrated circuits. Xyoo 1992, lub Hoobkas tau tsim kho tiav raws li reverse channel 6H-SIC NMOSFETs monolithic digital integrated circuit. Lub chip muaj thiab tsis yog rooj vag, lossis tsis yog rooj vag, rau lossis rooj vag, binary counter, thiab ib nrab adder circuits thiab tuaj yeem ua haujlwm kom zoo hauv qhov kub ntawm 25 ° C txog 300 ° C. Xyoo 1995, thawj SiC dav hlau MESFET Ics tau tsim los ntawm kev siv tshuab vanadium txhaj tshuaj cais. Los ntawm kev tswj hwm qhov ntau ntawm vanadium txhaj tshuaj, ib qho insulating SiC tuaj yeem tau txais.

Hauv cov voj voog digital logic, CMOS circuits zoo nkauj dua li NMOS circuits. Thaum lub Cuaj Hlis 1996, thawj 6H-SIC CMOS digital integrated circuit tau tsim tawm. Lub cuab yeej siv cov txheej txheem txhaj tshuaj N-order thiab deposition oxide, tab sis vim muaj lwm yam teeb meem ntawm cov txheej txheem, lub chip PMOSFETs threshold voltage siab dhau. Thaum Lub Peb Hlis 1997 thaum tsim lub voj voog SiC CMOS tiam thib ob. Cov thev naus laus zis ntawm kev txhaj tshuaj P trap thiab thermal growth oxide txheej tau txais yuav. Lub zog threshold voltage ntawm PMOSEFTs tau los ntawm kev txhim kho cov txheej txheem yog li -4.5V. Tag nrho cov circuits ntawm lub chip ua haujlwm zoo ntawm chav tsev kub txog li 300 ° C thiab siv hluav taws xob los ntawm ib qho khoom siv hluav taws xob, uas tuaj yeem nyob qhov twg los ntawm 5 txog 15V.

Nrog kev txhim kho ntawm qhov zoo ntawm cov substrate wafer, cov integrated circuits yuav ua haujlwm tau zoo dua thiab muaj txiaj ntsig zoo dua. Txawm li cas los xij, thaum cov khoom siv SiC thiab cov teeb meem txheej txheem tau daws tau yooj yim, qhov kev ntseeg tau ntawm cov cuab yeej thiab pob khoom yuav dhau los ua qhov tseem ceeb uas cuam tshuam rau kev ua haujlwm ntawm cov high-temperature SiC integrated circuits.