Imiterere y'ubushakashatsi ku bijyanye n'urusobe rw'amashanyarazi rwa SiC

Bitandukanye n'ibikoresho bya S1C bitandukanye bikurikiza ingufu nyinshi, ingufu nyinshi, frequency nyinshi n'imiterere y'ubushyuhe bwinshi, intego y'ubushakashatsi bwa SiC integrated circuit ni ukubona circuit ya digitale ifite ubushyuhe bwinshi ku ishami rigenzura ingufu za IC. Kubera ko ishami ritegurirwa SiC ku ngufu z'amashanyarazi imbere ari nke cyane, bityo ingaruka z'ubusembwa bwa microtubules zizagabanuka cyane, iki ni cyo gice cya mbere cya monolithic SiC integrated operational amplifier chip cyagenzuwe, umusaruro nyawo urangiye kandi ugenwa n'umusaruro uri hejuru cyane ugereranije n'ubusembwa bwa microtubules, bityo, hashingiwe ku rugero rwa SiC yield na Si na CaAs biratandukanye cyane. Chip ishingiye ku ikoranabuhanga rya NMOSFET rigabanuka. Impamvu nyamukuru ni uko uburyo bwo gutwara neza bwa reverse channel SiC MOSFETs buri hasi cyane. Kugira ngo hongerwe uburyo bwo kugenda bwa Sic, ni ngombwa kunoza no kunoza uburyo bwo gushyuha bwa Sic.

Kaminuza ya Purdue yakoze akazi kenshi ku miyoboro ya SiC. Mu 1992, uru ruganda rwakozwe neza hashingiwe ku miyoboro ya digitale ya monolithic ya reverse channel 6H-SIC NMOSFETs. Iyi chip irimo gate, cyangwa gate, on cyangwa gate, binary counter, na half adder circuits kandi ishobora gukora neza mu bushyuhe buri hagati ya 25°C na 300°C. Mu 1995, hakozwe ikoranabuhanga rya mbere rya SiC plane MESFET Ics hakoreshejwe vanadium injection isolation. Mu kugenzura neza ingano ya vanadium injected, hashobora kuboneka SiC ikingira.

Mu miyoboro ya digitale logique, imiyoboro ya CMOS irakurura kurusha imiyoboro ya NMOS. Muri Nzeri 1996, hakozwe umuyoboro wa mbere wa digitale wa 6H-SIC CMOS. Iki gikoresho gikoresha urwego rwa N-order na deposition oxide, ariko bitewe n'ibindi bibazo by'imikorere, voltage ya chip PMOSFETs yari hejuru cyane. Muri Werurwe 1997 ubwo hakorwaga umuyoboro wa kabiri wa SiC CMOS. Ikoranabuhanga ryo gutera P trap na thermal growth oxide ryakoreshejwe. Voltage ya PMOSEFTs iboneka binyuze mu kunoza imikorere ni hafi -4.5V. Imiyoboro yose iri kuri chip ikora neza ku bushyuhe bw'icyumba kugeza kuri 300°C kandi ikoreshwa n'amashanyarazi amwe, ashobora kuba hagati ya 5 na 15V.

Hamwe no kunoza ubwiza bwa substrate wafer, hazakorwa imiyoboro ikora neza kandi itanga umusaruro mwinshi. Ariko, iyo ibibazo by'ibikoresho bya SiC n'uburyo bitunganywa bikemutse, ubwizerwe bw'igikoresho n'ipaki bizaba ikintu cy'ingenzi kigira ingaruka ku mikorere y'imiyoboro ikora ya SiC ifite ubushyuhe bwinshi.