Isimo socwaningo lwesekethe ehlanganisiwe ye-SiC

Ngokungafani namadivayisi e-S1C ahlukene aphishekela i-voltage ephezulu, amandla aphezulu, imvamisa ephezulu kanye nezici zokushisa okuphezulu, umgomo wocwaningo lwesekethe ehlanganisiwe ye-SiC ikakhulukazi ukuthola isekethe yedijithali yokushisa okuphezulu yesekethe yokulawula amandla e-IC ahlakaniphile. Njengoba isekethe ehlanganisiwe ye-SiC yensimu kagesi yangaphakathi iphansi kakhulu, ngakho-ke ithonya lesiphambeko se-microtubules lizoncipha kakhulu, lesi yingxenye yokuqala ye-monolithic SiC integrated operational amplifier chip yaqinisekiswa, umkhiqizo wangempela oqediwe futhi onqunywa yinzuzo iphakeme kakhulu kunesiphambeko se-microtubules, ngakho-ke, ngokusekelwe kumodeli ye-SiC yield kanye nezinto ze-Si ne-CaAs ngokusobala zihlukile. I-chip isekelwe kubuchwepheshe be-NMOSFET bokuncipha. Isizathu esiyinhloko ukuthi ukuhamba okusebenzayo kwe-carrier kwe-reverse channel SiC MOSFETs kuphansi kakhulu. Ukuze kuthuthukiswe ukuhamba kwendawo ye-Sic, kuyadingeka ukuthuthukisa nokwenza ngcono inqubo ye-thermal oxidation ye-Sic.

I-Purdue University yenze umsebenzi omningi kumasekethe ahlanganisiwe e-SiC. Ngo-1992, ifektri yathuthukiswa ngempumelelo ngokusekelwe kusekethe ehlanganisiwe yedijithali ye-monolithic yesiteshi esingemuva se-6H-SIC NMOSFET. I-chip iqukethe hhayi isango, noma hhayi isango, i-on noma isango, i-binary counter, kanye namasekethe e-half adder futhi ingasebenza kahle ebangeni lokushisa eliphakathi kuka-25°C no-300°C. Ngo-1995, indiza yokuqala ye-SiC MESFET Ics yakhiwa kusetshenziswa ubuchwepheshe bokuhlukaniswa kwe-vanadium injection. Ngokulawula ngokunembile inani le-vanadium injected, i-SiC insulating ingatholakala.

Kumasekethe e-logic edijithali, amasekethe e-CMOS akhanga kakhulu kunemasekethe e-NMOS. NgoSepthemba 1996, kwenziwa isekethe yokuqala yedijithali ehlanganisiwe ye-6H-SIC CMOS. Le divayisi isebenzisa ungqimba lwe-N-order olujoyiwe kanye nolwe-deposition oxide, kodwa ngenxa yezinye izinkinga zenqubo, i-voltage yomkhawulo we-chip PMOSFETs iphezulu kakhulu. NgoMashi 1997 lapho kukhiqizwa isekethe yesizukulwane sesibili se-SiC CMOS. Ubuchwepheshe bokufaka i-P trap kanye nongqimba lwe-thermal growth oxide buyasetshenziswa. I-voltage yomkhawulo we-PMOSEFTs etholwe ngokuthuthukiswa kwenqubo icishe ibe yi--4.5V. Zonke amasekethe ku-chip asebenza kahle ekushiseni kwegumbi kufika ku-300°C futhi anikwa amandla yi-power supply eyodwa, engaba noma yikuphi ukusuka ku-5 kuya ku-15V.

Ngokuthuthukiswa kwekhwalithi ye-wafer ye-substrate, kuzokwenziwa amasekethe ahlanganisiwe asebenzayo futhi anesivuno esiphezulu. Kodwa-ke, lapho izinkinga zezinto ze-SiC kanye nezinqubo zixazululwa ngokuyisisekelo, ukuthembeka kwedivayisi kanye nephakheji kuzoba yisici esiyinhloko esithinta ukusebenza kwamasekethe ahlanganisiwe e-SiC anokushisa okuphezulu.