Ukwahluka kwizixhobo ze-S1C ezidityanisiweyo ezilandela amandla ombane aphezulu, amandla aphezulu, ukuphindaphindwa okuphezulu kunye neempawu zobushushu obuphezulu, injongo yophando yesekethe edibeneyo ye-SiC kukufumana ubushushu obuphezulu besekethe yedijithali yesekethe yolawulo olukrelekrele lwe-ICs. Njengoko i-SiC edibeneyo yesekethe yentsimi yombane yangaphakathi iphantsi kakhulu, ngoko ke impembelelo ye-microtubules isiphene iya kuncipha kakhulu, eli liqhekeza lokuqala le-monolithic SiC edibeneyo yokusebenza ye-amplifier chip yaqinisekiswa, imveliso yokwenene egqityiweyo kwaye igqitywe yimveliso iphezulu kakhulu kuneziphene ze-microtubules, ngoko ke, ngokusekelwe kwimodeli ye-SiC yesivuno kunye ne-Sily ecacileyo yezinto ezibonakalayo ezahlukeneyo. Itshiphu isekwe kwitekhnoloji ye-NMOSFET yokuphela. Esona sizathu sikukuba ukushukumiseka okusebenzayo komthuthi we-reverse channel SiC MOSFETs kuphantsi kakhulu. Ukuze kuphuculwe ukuhamba komhlaba kweSic, kuyimfuneko ukuphucula kunye nokwandisa inkqubo ye-thermal oxidation yeSic.
IYunivesithi yasePurdue yenze umsebenzi omninzi kwiisekethe ezidibeneyo zeSiC. Kwi-1992, i-factory yaphuhliswa ngempumelelo ngokusekelwe kwi-channel ye-reverse 6H-SIC NMOSFETs isekethe edibeneyo yedijithali ye-monolithic. I-chip iqulethe kwaye ingabi yisango, okanye isango, okanye isango, i-binary counter, kunye ne-half adder circuits kwaye inokusebenza ngokufanelekileyo kuluhlu lwamaqondo obushushu angama-25 ° C ukuya kuma-300 ° C. Ngo-1995, inqwelomoya yokuqala ye-SiC i-MESFET Ics yenziwa kusetyenziswa iteknoloji yokuhlukanisa inaliti ye-vanadium. Ngokulawula ngokuchanekileyo inani le-vanadium injected, i-SiC ekhuselayo inokufumaneka.
Kwiisekethe zedijithali, iisekethe zeCMOS zinomtsalane ngakumbi kuneesekethe ze-NMOS. NgoSeptemba 1996, isekethe yokuqala edibeneyo yedijithali ye-6H-SIC CMOS yenziwa. Isixhobo sisebenzisa i-N-odolo etofweyo kunye ne-deposition oxide layer, kodwa ngenxa yezinye iingxaki zenkqubo, i-chip PMOSFETs threshold voltage iphezulu kakhulu. NgoMatshi 1997 xa kuveliswa isizukulwana sesibini sesekethe yeSiC CMOS. Itekhnoloji yokufaka i-P trap kunye ne-thermal growth oxide layer yamkelwa. I-voltage ye-threshold ye-PMOSEFTs efunyenwe ngokuphuculwa kwenkqubo malunga ne -4.5V. Zonke iisekethe kwi-chip zisebenza kakuhle kwiqondo lokushisa ukuya kwi-300 ° C kwaye zinikwe amandla ombane omnye, onokuthi ube naphi na ukusuka kwi-5 ukuya kwi-15V.
Ngokuphuculwa komgangatho we-wafer we-substrate, iisekethe ezidibeneyo ezisebenzayo kunye nemveliso ephezulu ziya kwenziwa. Nangona kunjalo, xa izinto ze-SiC kunye neengxaki zenkqubo zisonjululwe ngokusisiseko, ukuthembeka kwesixhobo kunye nephakheji kuya kuba yinto ephambili echaphazela ukusebenza kweesekethe ezidibeneyo ze-SiC ezinobushushu obuphezulu.
Ixesha lokuposa: Aug-23-2022