Ngokungafaniyo nezixhobo ze-S1C ezizimeleyo ezilandela i-voltage ephezulu, amandla aphezulu, i-frequency ephezulu kunye neempawu zobushushu obuphezulu, injongo yophando yesekethe edibeneyo ye-SiC ikakhulu kukufumana isekethe yedijithali yobushushu obuphezulu yesekethe yokulawula amandla e-IC. Njengoko isekethe edibeneyo ye-SiC kwintsimi yombane yangaphakathi iphantsi kakhulu, ngoko ke impembelelo yesiphene se-microtubules iya kuncipha kakhulu, le yingcezu yokuqala ye-monolithic SiC integrated operational amplifier chip eqinisekisiweyo, imveliso yokwenyani egqityiweyo kwaye imiselwe yimveliso iphezulu kakhulu kuneziphene ze-microtubules, ngoko ke, ngokusekelwe kwimodeli ye-SiC yield kunye nezinto ze-Si kunye ne-CaAs ngokucacileyo zahlukile. I-chip isekelwe kwitekhnoloji ye-NMOSFET yokuncipha. Isizathu esiphambili kukuba ukuhamba okusebenzayo kwe-carrier ye-reverse channel SiC MOSFETs kuphantsi kakhulu. Ukuze kuphuculwe ukuhamba komphezulu we-Sic, kuyimfuneko ukuphucula nokuphucula inkqubo ye-thermal oxidation ye-Sic.
IYunivesithi yasePurdue yenze umsebenzi omninzi kwiisekethe ezidityanisiweyo zeSiC. Ngo-1992, umzi-mveliso waphuhliswa ngempumelelo ngokusekelwe kwisekethe edityanisiweyo yedijithali ye-monolithic ye-reverse channel 6H-SIC NMOSFETs. Le chip iqulethe kwaye ayinayo isango, okanye ayinayo isango, kwi-okanye isango, i-binary counter, kunye neesekethe ze-half adder kwaye inokusebenza ngokufanelekileyo kuluhlu lobushushu oluphakathi kwama-25°C ukuya kuma-300°C. Ngo-1995, i-SiC plane MESFET Ics yokuqala yenziwa kusetyenziswa itekhnoloji yokwahlula i-vanadium injection. Ngokulawula ngokuchanekileyo ubungakanani be-vanadium injected, i-SiC insulating ingafunyanwa.
Kwiisekethe ze-digital logic, iisekethe ze-CMOS zinomtsalane ngakumbi kuneesekethe ze-NMOS. NgoSeptemba 1996, isekethe yokuqala yedijithali ye-6H-SIC CMOS yenziwe. Esi sixhobo sisebenzisa umaleko we-N-order kunye ne-deposition oxide, kodwa ngenxa yezinye iingxaki zenkqubo, i-chip PMOSFETs threshold voltage iphezulu kakhulu. NgoMatshi 1997 xa kusenziwa isekethe yesizukulwana sesibini se-SiC CMOS. Itekhnoloji yokufaka i-P trap kunye nomaleko we-thermal growth oxide iyasetyenziswa. I-threshold voltage ye-PMOSEFTs efunyenwe ngokuphuculwa kwenkqubo imalunga ne--4.5V. Zonke iisekethe kwi-chip zisebenza kakuhle kubushushu begumbi ukuya kuthi ga kwi-300°C kwaye ziqhutywa ngumbane omnye, onokuba naphi na ukusuka kwi-5 ukuya kwi-15V.
Ngokuphuculwa komgangatho we-substrate wafer, kuya kwenziwa iisekethe ezidibeneyo ezisebenzayo nezinemveliso ephezulu. Nangona kunjalo, xa iingxaki zezinto zeSiC kunye neenkqubo zisonjululwa ngokusisiseko, ukuthembeka kwesixhobo kunye nephakheji kuya kuba yinto ephambili echaphazela ukusebenza kweesekethe ezidibeneyo zeSiC ezinobushushu obuphezulu.
Ixesha lokuthumela: Agasti-23-2022