Mamiriro ekutsvagisa eSiC integrated circuit

Kusiyana nemidziyo yeS1C discrete inoshandisa voltage yakakwira, simba rakawanda, mafrequency akakwira uye hunhu hwekupisa kwakakwira, chinangwa chekutsvagisa cheSiC integrated circuit ndechekuwana dunhu redhijitari rinopisa zvakanyanya redunhu rekudzora maICs ane simba rakangwara. Sezvo SiC integrated circuit yemunda wemagetsi wemukati yakaderera kwazvo, saka simba re microtubules defect richadzikira zvakanyanya, ichi ndicho chikamu chekutanga che monolithic SiC integrated operational amplifier chip chakasimbiswa, chigadzirwa chaicho chakapedzwa uye chinosarudzwa ne goho rakakwirira zvikuru pane ma microtubules defects, saka, zvichibva paSiC yield model uye zvinhu zveSi neCaAs zvakasiyana zviri pachena. Chip yacho yakavakirwa patekinoroji yeNMOSFET yakaderedzwa. Chikonzero chikuru ndechekuti kufamba kunoshanda kwe reverse channel SiC MOSFETs kwakaderera zvakanyanya. Kuti uvandudze kufamba kwepamusoro kweSic, zvakakosha kuvandudza nekugadzirisa maitiro ekupisa eSic.

Yunivhesiti yePurdue yakaita basa rakawanda paSiC integrated circuits. Muna 1992, fekitori iyi yakagadzirwa zvinobudirira zvichibva pa reverse channel 6H-SIC NMOSFETs monolithic digital integrated circuit. Chip iyi ine gate, kana kuti kwete gate, on kana gate, binary counter, uye half adder circuits uye inogona kushanda nemazvo muhutembiricha hwe25°C kusvika 300°C. Muna 1995, SiC plane MESFET Ics yekutanga yakagadzirwa uchishandisa vanadium injection isolation technology. Nekunyatso dzora huwandu hwevanadium injected, SiC inodzivira inogona kuwanikwa.

Mumasekete edhijitari, masekete eCMOS anokwezva kupfuura masekete eNMOS. MunaGunyana 1996, sekete yekutanga ye6H-SIC CMOS digital integrated yakagadzirwa. Mudziyo uyu unoshandisa injected N-order uye deposition oxide layer, asi nekuda kwemamwe matambudziko eprocess, chip PMOSFETs threshold voltage yakakwira zvakanyanya. MunaKurume 1997 pakugadzira circuit yechizvarwa chechipiri cheSiC CMOS. Tekinoroji yekuisa P trap uye thermal growth oxide layer yashandiswa. Threshold voltage yePMOSEFTs inowanikwa nekuvandudzwa kweprocess inenge -4.5V. Masekete ese ari pachip anoshanda zvakanaka patembiricha yemumba kusvika ku300°C uye anofambiswa nemagetsi rimwe chete, anogona kuva chero kubva pa5 kusvika ku15V.

Nekuvandudzwa kwemhando yewafer ye substrate, macircuit akabatanidzwa anoshanda uye ane goho rakakura achagadzirwa. Zvisinei, kana matambudziko eSiC nezvinhu uye maitiro agadziriswa, kuvimbika kwemudziyo nepakeji kuchava chinhu chikuru chinokanganisa mashandiro emacircuit akabatanidzwa eSiC ane tembiricha yepamusoro.