I-silicon carbide e-Sintered Sic crystal / wafer boat

Inkcazo emfutshane:

Isikhephe sethu se-Sintered Silicon Carbide (SiC) Crystal/Wafer senzelwe ukuchaneka kwimveliso ye-semiconductor. Ngozinzo olubalaseleyo lobushushu, ukumelana neekhemikhali, kunye namandla oomatshini, esi sikhephe siqinisekisa ukuthuthwa okukhuselekileyo nokufanelekileyo kweekristale kunye neewafers ngeenkqubo zobushushu obuphezulu.

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-SinteredI-Silicon Carbide (i-SiC)Ikristale/Inqanawa yeWaferYenzelwe iimfuno ezingqongqo zemizi-mveliso ye-semiconductor kunye ne-microelectronics. Ibonelela ngeqonga elikhuselekileyo lokuphatha iikristale ze-silicon kunye nee-wafers ngexesha lokucubungula ubushushu obuphezulu, ukuqinisekisa ukuba ukuthembeka kwazo kunye nobunyulu zigcinwa kulo lonke ixesha.

Ezona mpawu

Uzinzo oluBalaseleyo lweThermal: Iyakwazi ukumelana namaqondo obushushu afikelela kwi-1600°C, ilungele iinkqubo ezifuna ulawulo oluchanekileyo lobushushu.
Ukumelana neekhemikhali eziphezulu: Ayimelani neekhemikhali ezininzi ezirhabaxa kunye neegesi, inika ukuqina kwiindawo ezinzima zokucubungula.
Amandla Oomatshini Aqinileyo: Igcina ulwakhiwo luqinile phantsi koxinzelelo oluphezulu, inciphisa amathuba okuguquka okanye ukwaphuka.
Ukwandiswa Okuncinci Kobushushu: Yenzelwe ukunciphisa umngcipheko wokothuka kobushushu kunye nokuqhekeka, inika ukusebenza okuthembekileyo xa isetyenziswa ixesha elide.
Ukuvelisa ngokuchanekileyo: Yenziwe ngocoselelo oluphezulu ukuhlangabezana neemfuno ezithile zenkqubo kwaye ilungele ubungakanani obahlukeneyo bekristale kunye ne-wafer.

Izicelo

• Ukulungiswa kwe-wafer ye-semiconductor

• Ukuveliswa kwe-LED

• Ukuveliswa kweeseli ze-photovoltaic

• Iinkqubo zokufaka umphunga wekhemikhali (CVD)

• Uphando nophuhliso kwisayensi yezinto eziphathekayo

烧结碳化硅物理特性 Iimpawu ezibonakalayo zeSi-interedSi-ayikhoniCi-arbide
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
化学成分 / IikhemikhaliUkwakhiwa	I-SiC>95%, i-Si<5%
体积密度 / Unizi lolwapho kuyiwa khona	>3.07 g/cm³
显气孔率/ Ukuvuleka okubonakalayo Ukuvuleka okubonakalayo	<0.1%
常温抗弯强度/ Imodulus yokuqhekeka kwi-20℃	270 MPa
高温抗弯强度/ Imodulus yokuqhekeka kwi-1200℃	290I-MPa
硬度/ Ukuqina kwi-20℃	2400 Kg/mm²
断裂韧性/ Ukuqina kokwaphuka kwi-20%	3.3MPa · m^1/2
导热系数/ Ukuqhuba kobushushu kwi-1200℃	45w/m .K
热膨胀系数/ Ukwandiswa kobushushu kwi-20-1200℃	4.51 × 10^-6/℃
最高工作温度/ Ubushushu obuphezulu bokusebenza	1400℃
热震稳定性/ Ukumelana nobushushu bokutshayiswa yi-thermal kwi-1200℃	Kulungile

Kutheni Ukhetha Isikebhe Sethu Esine-Sintered Silicon Carbide (SiC) Crystal/Wafer?

Ukukhetha iSiC Crystal/Wafer Boat yethu kuthetha ukukhetha ukuthembeka, ukusebenza kakuhle, kunye nobude bexesha. Inqanawa nganye ithatha amanyathelo angqongqo okulawula umgangatho ukuqinisekisa ukuba ihlangabezana nemigangatho ephezulu yoshishino. Le mveliso ayigcini nje ngokuphucula ukhuseleko kunye nemveliso yenkqubo yakho yokuvelisa kodwa ikwaqinisekisa umgangatho ohambelanayo weekristale zakho zesilicon kunye neewafer. NgeSiC Crystal/Wafer Boat yethu, ungathembela kwisisombululo esixhasa ukusebenza kakuhle kwakho.