I-SinteredI-Silicon Carbide (i-SiC)Ikristalu/Isikebhe Esiyindilingaiklanyelwe izidingo eziqinile zezimboni ze-semiconductor kanye ne-microelectronics. Ihlinzeka ngeplatifomu ephephile yokuphatha amakristalu e-silicon nama-wafer ngesikhathi sokucubungula okushisa okuphezulu, ukuqinisekisa ukuthi ubuqotho kanye nobumsulwa bawo kugcinwa kuyo yonke indawo.
Izici Eziyinhloko
- Ukuqina Okumangalisayo Kokushisa: Iyakwazi ukumelana namazinga okushisa afinyelela ku-1600°C, ilungele izinqubo ezidinga ukulawulwa okunembile kokushisa.
- Ukumelana Okuphezulu Kwamakhemikhali: Ayimelani namakhemikhali amaningi agqwalisayo namagesi, ihlinzeka ngokuqina ezindaweni zokucubungula ezinzima.
- Amandla Okusebenza Okusebenza Kakhulu: Igcina ubuqotho besakhiwo ngaphansi kokucindezeleka okukhulu, inciphisa amathuba okuguquka noma ukuphuka.
- Ukwanda Okuncane Kokushisa: Yakhelwe ukunciphisa ingozi yokushaqeka nokuqhuma kokushisa, inikeza ukusebenza okuthembekile ngaphezu kokusetshenziswa isikhathi eside.
- Ukukhiqiza Ngokucophelela: Yenziwe ngokunemba okuphezulu ukuze ihlangabezane nezidingo ezithile zenqubo futhi ivumelane nosayizi abahlukahlukene bekristalu ne-wafer.
Izicelo
• Ukucutshungulwa kwe-wafer ye-semiconductor
• Ukukhiqizwa kwe-LED
• Ukukhiqizwa kwamaseli e-photovoltaic
• Izinhlelo zokufaka umusi wamakhemikhali (i-CVD)
• Ucwaningo nentuthuko kwisayensi yezinto ezibonakalayo
| 烧结碳化硅物理特性 Izakhiwo zomzimba zeSkuhilelekileSi-iconCi-arbide | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 化学成分 / AmakhemikhaliUkwakheka | I-SiC>95%, i-Si<5% |
| 体积密度 / Ubuningi obukhulu | >3.07 g/cm³ |
| 显气孔率/ Ukuvuleka okubonakalayo Ukuvuleka okubonakalayo | <0.1% |
| 常温抗弯强度/ Imodulus yokuqhekeka ku-20℃ | 270 MPa |
| 高温抗弯强度/ Imodulus yokuqhekeka ku-1200℃ | 290I-MPa |
| 硬度/ Ukuqina ku-20℃ | 2400 kg/mm² |
| 断裂韧性/ Ukuqina kokuphuka ku-20% | 3.3MPa · m1/2 |
| 导热系数/ Ukushisa Okushisayo ku-1200℃ | 45w/m .K |
| 热膨胀系数/ Ukwanda kokushisa ku-20-1200℃ | 4.51 × 10-6/℃ |
| 最高工作温度/ Izinga lokushisa eliphezulu lokusebenza | 1400℃ |
| 热震稳定性/ Ukumelana nokushaqeka kokushisa ku-1200℃ | Kuhle |
Kungani Kufanele Ukhethe Isikebhe Sethu Esine-Sintered Silicon Carbide (SiC) Crystal/Wafer?
Ukukhetha iSiC Crystal/Wafer Boat yethu kusho ukukhetha ukuthembeka, ukusebenza kahle, kanye nokuphila isikhathi eside. Isikebhe ngasinye sidlula ezinyathelweni zokulawula ikhwalithi eziqinile ukuqinisekisa ukuthi sihlangabezana nezindinganiso eziphakeme kakhulu embonini. Lo mkhiqizo awugcini nje ngokuthuthukisa ukuphepha kanye nokukhiqiza kwenqubo yakho yokukhiqiza kodwa futhi uqinisekisa ikhwalithi eqhubekayo yamakristalu akho e-silicon nama-wafer. NgeSiC Crystal/Wafer Boat yethu, ungathembela kusisombululo esisekela ukusebenza kahle kwakho.
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