Gallium arsenide-phosphide epitaxial Tsarin, kama da samar da tsarin na substrate ASP irin (ET0.032.512TU), ga. yi na planar ja LED lu'ulu'u.
Ma'aunin fasaha na asali
zuwa gallium arsenide-phosphide Tsarin
| 1, SubstrateGaAs | |
| a. Nau'in ɗabi'a | lantarki |
| b. Resistivity, ohm-cm | 0,008 |
| c. Crystal-latticeorientation | (100) |
| d. Rashin fahimtar yanayin | (1-3)° |
| 2. Epitaxial Layer GaAs1-х Pх | |
| a. Nau'in ɗabi'a | lantarki |
| b. Abubuwan da ke cikin phosphorus a cikin shimfidar wuri | daga х = 0 zuwa х ≈ 0,4 |
| c. Abubuwan da ke cikin phosphorus a cikin nau'in abun da ke ciki akai-akai | ≈ 0,4 |
| d. Maida hankali, сm3 | (0,2-3,0) · 1017 |
| e. Tsawon tsayi a matsakaicin bakan photoluminescence, nm | 645-673 nm |
| f. Tsawon tsayi a matsakaicin madaidaicin bakan electroluminescence | 650-675 nm |
| g. Kauri na dindindin, micron | Akalla 8 nm |
| h. Layerthickness (duka), micron | Akalla nm 30 |
| 3 Farantin tare da Layer epitaxial | |
| a. Juyawa, micron | Mafi yawan 100 um |
| b. Kauri, micron | 360 - 600 |
| c. Square santimita | Akalla 6 cm2 |
| d. Takamaiman ƙarfin haske (bayan yaduwaZn), cd/amp | Akalla 0,05 cd/amp |
