gallium arsenide-phosphide epitaxial

Tsarin epitaxial na Gallium arsenide-phosphide, kama da tsarin da aka samar na nau'in ASP (ET0.032.512TU), don ƙera lu'ulu'u ja masu siffar planar.

Cikakken Bayani game da Samfurin

Tsarin epitaxial na Gallium arsenide-phosphide, kama da tsarin da aka samar na nau'in ASP (ET0.032.512TU), don ƙera lu'ulu'u ja masu siffar planar.

Sigar fasaha ta asali
zuwa tsarin gallium arsenide-phosphide

1, SubstrateGaAs
a. Nau'in watsa wutar lantarki	lantarki
b. Juriya, ohm-cm	0,008
c. Daidaitawar lu'ulu'u-latticeority	(100)
d. Rashin fahimtar yanayin saman	(1−3)°

2. Layer na Epitaxial GaAs1-х Pх
a. Nau'in watsa wutar lantarki	lantarki
b. Yawan sinadarin phosphorus a cikin tsarin sauyawa	daga х = 0 zuwa х ≈ 0,4
c. Yawan sinadarin phosphorus a cikin wani tsari na tsari mai dorewa	х ≈ 0,4
d. Yawan masu ɗaukar kaya, сm3	(0,2−3,0)·1017
e. Tsawon zango a matsakaicin bakan hasken rana, nm	645−673 nm
f. Tsawon zango a matsakaicin bakan lantarki	650−675 nm
g. Kauri mai kauri, micron	Akalla 8 nm
h. Kauri na yadudduka (jimla), micron	Aƙalla 30 nm

Faranti mai layin epitaxial
a. Ragewa, micron	A mafi yawan 100 um
b. Kauri, micron	360−600 um
c. Santimita murabba'i	Aƙalla 6 cm2
d. Ƙarfin haske na musamman (bayan yaɗuwaZn), cd/amp	Aƙalla 0.05 cd/amp