i-gallium arsenide-phosphide epitaxial

Isithombe Esifakiwe se-gallium arsenide-phosphide epitaxial

Incazelo emfushane:

Izakhiwo ze-epitaxial ze-Gallium arsenide-phosphide, ezifana nezakhiwo ezikhiqizwe zohlobo lwe-substrate ASP (ET0.032.512TU), zokukhiqiza amakristalu e-LED abomvu ajikelezayo.

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Amathegi Omkhiqizo

Izakhiwo ze-epitaxial ze-Gallium arsenide-phosphide, ezifana nezakhiwo ezikhiqizwe zohlobo lwe-substrate ASP (ET0.032.512TU), zokukhiqiza amakristalu e-LED abomvu ajikelezayo.

Ipharamitha yobuchwepheshe eyisisekelo
izakhiwo ze-gallium arsenide-phosphide

1, I-SubstrateGaAs
a. Uhlobo lokuqhuba	kagesi
b. Ukumelana, ohm-cm	0,008
c. Ukuqondiswa kwekristalu-lattice	(100)
d. Ukungaqondi kahle kwendawo	(1−3)°

2. Isendlalelo se-Epitaxial GaAs1-х Pх
a. Uhlobo lokuqhuba	kagesi
b. Okuqukethwe kwe-phosphorus kungqimba lokuguquka	kusukela ku-х = 0 kuya ku-х ≈ 0,4
c. Okuqukethwe kwe-phosphorus kusendlalelo sokwakheka okungaguquki	х ≈ 0,4
d. Ukuhlushwa komthwali, сm3	(0,2−3,0)·1017
e. Ubude be-wavelength ku-spectrum ye-photoluminescence ephezulu, nm	645−673 nm
f. Ubude bamagagasi obuphezulu kakhulu be-spectrum ye-electroluminescence	650−675 nm
g. Ubukhulu bengqimba obuhlala njalo, i-micron	Okungenani i-8 nm
h. Ubukhulu bengqimba (isamba), i-micron	Okungenani ama-nm angu-30

3 Ipuleti elinesendlalelo se-epitaxial
a. Ukuphambuka, i-micron	Okungenani ama-um ayi-100
b. Ubukhulu, i-micron	360−600 um
c. Isentimitha-skwele	Okungenani 6 cm2
d. Ukukhanya okuqondile (ngemuva kokusabalala kwe-Zn), cd/amp	Okungenani i-0,05 cd/amp