gallium arsenide-phosphide epitaxial

Sawirka Gaarka ah ee gallium arsenide-phosphide

Sharaxaad Gaaban:

Qaab-dhismeedka epitaxial-ka ee Gallium arsenide-phosphide, oo la mid ah qaab-dhismeedka la soo saaray ee nooca substrate-ka ASP (ET0.032.512TU), ee loogu talagalay soo saarista kiristaalo LED cas oo toosan.

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Halbeegga farsamada aasaasiga ah
qaab-dhismeedka gallium arsenide-phosphate

1, SubstrateGaAs
a. Nooca Gudbinta	elektaroonig ah
b. Iska caabin, ohm-cm	0,008
c. Jihaynta Crystal-latticeoring	(100)
d. Khalad xagga dusha sare ah	(1−3)°

2. Lakabka Epitaxial GaAs1-х Pх
a. Nooca Gudbinta	elektaroonig ah
b. Waxyaabaha ku jira fosfooraska ee ku jira lakabka kala-guurka	laga bilaabo х = 0 ilaa х ≈ 0,4
c. Waxyaabaha fosfooraska ku jira lakab ka kooban halabuur joogto ah	х ≈ 0,4
d. Xoogga side-qaadaha, сm3	(0,2−3,0)·1017
e. Dhererka hirarka ugu badan ee spectrum-ka sawir-qaadista, nm	645−673 nm
f. Dhererka hirarka ugu badan ee spectrum-ka elektaroonigga ah	650−675 nm
g. Dhumucda lakabka oo joogto ah, micron	Ugu yaraan 8 nm
h. Dhumucda lakabka (wadarta), micron	Ugu yaraan 30 nm

3 Saxan leh lakab epitaxial ah
a. Kala-goyn, micron	Ugu badnaan 100 um
b. Dhumuc, micron	360−600 um
c. Sentimitir laba jibbaaran	Ugu yaraan 6 cm2
d. Xoogga iftiinka gaarka ah (ka dib faafinta Zn), cd/amp	Ugu yaraan 0.05 cd/amp