gallium arsenide-phosphide epitaxial

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Gallium arsenide-phosphide epitaxial structures ,e ts'oanang le meaho e hlahisitsoeng ea mofuta oa substrate ASP (ET0.032.512TU), bakeng sa. tlhahiso ea likristale tse khubelu tsa LED tse planar.

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Gallium arsenide-phosphide epitaxial structures ,e ts'oanang le meaho e hlahisitsoeng ea mofuta oa substrate ASP (ET0.032.512TU), bakeng sa. tlhahiso ea likristale tse khubelu tsa LED tse planar.

Paramethara ea motheo ea tekheniki
ho meaho ea gallium arsenide-phosphide

1,SubstrateGaAs
a. Mofuta oa conductivity	elektronike
b. Resistivity, ohm-cm	0,008
c. Crystal-latticeorientation	(100)
d. Ho se be le maikutlo a matle	(1−3)°

2. Epitaxial layer GaAs1-х Pх
a. Mofuta oa conductivity	elektronike
b. Likahare tsa phosphorus karolong ea phetoho	ho tloha ho х = 0 ho ea ho х ≈ 0,4
c. Likahare tsa phosphorus ka har'a mokoloko oa sebopeho sa kamehla	х ≈ 0,4
d. Khatello ea thepa, сm3	(0,2−3,0)·1017
e. Wavelength ka boholo ba spectrum ea photoluminescence, nm	645−673 nm
f. Wavelength ka boholo ba mabone a electroluminescence	650−675 nm
g. Botenya ba kamehla, micron	Bonyane 8 nm
h. Layerthickness (kakaretso), micron	Bonyane 30 nm

3 Plate e nang le epitaxial layer
a. Ho kheloha, micron	Ka ho fetisisa 100 um
b. Botenya, micron	360−600 um
c. Squarecentimeter	Bonyane 6 cm2
d. Matla a khanyang a khethehileng (kamora diffusionZn), cd/amp	Bonyane 0,05 cd/amp