gallium arsenide-phosphide epitaxial

Tlhaloso e Khutšoanyane:

Dibopeho tsa epitaxial tsa Gallium arsenide-phosphide, tse tshwanang le dibopeho tse hlahisitsweng tsa mofuta wa substrate ASP (ET0.032.512TU), bakeng sa tlhahiso ya dikristale tsa LED tse kgubedu tse planar.

Romella imeile ho rona Khoasolla e le PDF

Qaqiso ea Sehlahisoa

Li-tag tsa Sehlahisoa

Paramethara ea motheo ea botekgeniki
ho dibopeho tsa gallium arsenide-phosphide

1, SubstrateGaAs
a. Mofuta oa ho khanna motlakase	elektroniki
b. Ho hanyetsa, ohm-cm	0,008
c. Ho shebana le kristale le leralla	(100)
d. Ho se shebane hantle le bokaholimo	(1−3)°

2. Lera la Epitaxial GaAs1-х Pх
a. Mofuta oa ho khanna motlakase	elektroniki
b. Boleng ba phosphorus lera la phetoho	ho tloha ho х = 0 ho isa ho х ≈ 0,4
c. Boleng ba phosphorus ka lera la motsoako o sa fetoheng	х ≈ 0,4
d. Khokahano ea mojari, сm3	(0,2−3,0)·1017
e. Bolelele ba maqhubu a maqhubu a sa feteng palo e kahodimodimo ya photoluminescence, nm	645−673 nm
f. Bolelele ba maqhubu ho palo e kahodimodimo ya electroluminescence spectrum	650−675 nm
g. Botenya ba lera bo sa fetoheng, micron	Bonyane 8 nm
h. Botenya ba lera (kakaretso), micron	Bonyane 30 nm

3 Poleiti e nang le lera la epitaxial
a. Phapang, micron	Bonyane 100 um
b. Botenya, micron	360−600 um
c. Sekwere-senthimithara	Bonyane 6 cm2
d. Matla a khanya a itseng (kamora ho hasana ha Zn), cd/amp	Bonyane 0,05 cd/amp