Gallium arsenide-phosphide epitaxial zvimiro, zvakafanana neyakagadzirwa zvimiro zve substrate ASP mhando (ET0.032.512TU), ye. kugadzirwa kwe planar red LED makristasi.
Basic technical parameter
kune gallium arsenide-phosphide zvimiro
| 1,SubstrateGaAs | |
| a. Conductivitytype | zvemagetsi |
| b. Resistivity, ohm-cm | 0,008 |
| c. Crystal-latticeorientation | (100) |
| d. Surface misoriental | (1−3)° |
| 2. Epitaxial layer GaAs1-х Pх | |
| a. Conductivitytype | zvemagetsi |
| b. Phosphorus yemukati mune yekuchinja layer | kubva х = 0 kusvika х ≈ 0,4 |
| c. Phosphorus yemukati muchikamu chekugara kuumbwa | х ≈ 0,4 |
| d. Carrier concentration, сm3 | (0,2−3,0)·1017 |
| e. Wavelength pahupamhi hwephotoluminescence spectrum, nm | 645−673 nm |
| f. Wavelength pahupamhi hwe electroluminescence spectrum | 650−675 nm |
| g. Constant layer thickness, micron | Anenge 8 nm |
| h. Layerthickness (yakazara), micron | Anenge 30 nm |
| 3 Ndiro ine epitaxial layer | |
| a. Kutsauswa, micron | Kunyanya 100 um |
| b. Ukobvu, micron | 360−600 um |
| c. Squarecentimeter | Anenge 6 cm2 |
| d. Kunyanya kupenya kusimba (mushure me diffusionZn), cd/amp | Kanenge 0,05 cd/amp |
