gallium arsenide-phosphide epitaxial

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Gallium arsenide-phosphide epitaxial structures, dzakafanana nedzemhando yeASP substrate (ET0.032.512TU), dzinoshandiswa kugadzira makristaro e LED matsvuku akatenderera.

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Gallium arsenide-phosphide epitaxial structures, dzakafanana nedzemhando yeASP substrate (ET0.032.512TU), dzinoshandiswa kugadzira makristaro e LED matsvuku akatenderera.

Chiratidzo chehunyanzvi chepakutanga
kune gallium arsenide-phosphide structures

1, SubstrateGaAs
a. Rudzi rwekufambisa	zvemagetsi
b. Kuramba kwesimba, ohm-cm	0,008
c. Kurongeka kwekristaro nepaburi remadziro	(100)
d. Kusanzwisisana pamusoro	(1−3)°

2. Epitaxial layer GaAs1-х Pх
a. Rudzi rwekufambisa	zvemagetsi
b. Kuwanda kwephosphorus muchikamu chekuchinja	kubva pa х = 0 kusvika pa х ≈ 0,4
c. Kuwanda kwephosphorus muchikamu chechimiro chisingachinji	х ≈ 0,4
d. Kuwanda kwemutakuri, сm3	(0,2−3,0)·1017
e. Hurefu hwemafungu emvura pahuwandu hwe photoluminescence spectrum, nm	645−673 nm
f. Hurefu hwemafungu emagetsi pahuwandu hwepamusoro hwe electroluminescence spectrum	650−675 nm
g. Ukobvu hwechikamu chinogara kwenguva refu, micron	Kanenge 8 nm
h. Ukobvu hwechikamu (huzere), micron	Zvirinani 30 nm

3 Plate ine epitaxial layer
a. Kutsauka, micron	Paasingasviki 100 um
b. Ukobvu, micron	360−600 um
c. Sendimita sikweya	Kanenge 6 cm2
d. Kupenya kwakasimba (mushure mekupararira kweZn), cd/amp	Kanenge 0,05 cd/amp