gallium arsenide-phosphide epitaxial

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Cov qauv epitaxial gallium arsenide-phosphide, zoo ib yam li cov qauv tsim tawm ntawm hom substrate ASP (ET0.032.512TU), rau. kev tsim cov planar liab LED siv lead ua.

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Cov qauv epitaxial gallium arsenide-phosphide, zoo ib yam li cov qauv tsim tawm ntawm hom substrate ASP (ET0.032.512TU), rau. kev tsim cov planar liab LED siv lead ua.

Cov txheej txheem kev teeb tsa yooj yim
rau cov qauv gallium arsenide-phosphide

1, Cov Khoom Siv GaAs
a. Hom kev coj ua	hluav taws xob
b. Kev tiv taus, ohm-cm	0,008
c. Kev taw qhia siv lead ua-lattice	(100)
d. Kev tsis sib haum ntawm qhov chaw	(1−3)°

2. Txheej Epitaxial GaAs1-х Pх
a. Hom kev coj ua	hluav taws xob
b. Cov ntsiab lus phosphorus hauv txheej hloov pauv	txij li х = 0 txog х ≈ 0,4
c. Cov ntsiab lus phosphorus hauv ib txheej ntawm cov khoom sib xyaw tas li	x ≈ 0,4
d. Qhov concentration ntawm cov cab kuj, сm3	(0,2−3,0)·1017
e. Qhov ntev ntawm qhov siab tshaj plaws ntawm cov duab ci ntsa iab, nm	645−673 nm
f. Qhov ntev ntawm qhov siab tshaj plaws ntawm lub spectrum electroluminescence	650−675 nm
g. Cov txheej tuab tas mus li, micron	Yam tsawg kawg yog 8 nm
h. Txheej tuab (tag nrho), micron	Yam tsawg kawg yog 30 nm

3 Phaj nrog txheej epitaxial
a. Kev hloov pauv, micron	Qhov siab tshaj plaws 100 um
b. Qhov tuab, micron	360−600 um
c. Squarecentimeter	Yam tsawg kawg yog 6 cm2
d. Qhov ci ntsa iab tshwj xeeb (tom qab diffusionZn), cd/amp	Yam tsawg kawg nkaus 0.05 cd/amp