gallium arsenide-phosphide epitaxial

Foto a na-ahụ anya nke gallium arsenide-phosphide

Nkọwa Dị Mkpirikpi:

Ụdị akụkụ epitaxial Gallium arsenide-phosphide, yiri ụdị akụkụ ndị e mepụtara nke ụdị ASP substrate (ET0.032.512TU), maka imepụta kristal LED uhie planar.

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Nkọwa Ngwaahịa

Akara Ngwaahịa

Ụdị akụkụ epitaxial Gallium arsenide-phosphide, yiri ụdị akụkụ ndị e mepụtara nke ụdị ASP substrate (ET0.032.512TU), maka imepụta kristal LED uhie planar.

Isi teknụzụ paramita
na nhazi gallium arsenide-phosphide

1, SubstrateGaAs
a. Ụdị nhazi	eletrọniki
b. Nguzogide, ohm-cm	0,008
c. Nhazi kristal-lattice	(100)
d. Ndozihie n'elu elu	(1−3)°

2. Akwa Epitaxial GaAs1-х Pх
a. Ụdị nhazi	eletrọniki
b. Ọdịnaya phosphorus dị na oyi akwa mgbanwe	site na х = 0 ruo х ≈ 0,4
c. Ọdịnaya phosphorus dị n'ime oyi akwa nke ihe mejupụtara na-agbanweghi agbanwe	х ≈ 0,4
d. Ngụkọta ihe e ji ebu ibu, сm3	(0,2−3,0)·1017
e. Ogologo ebili mmiri na oke spectrum fotoluminescence, nm	645−673 nm
f. Ogologo ebili mmiri na oke spectrum electroluminescence kachasị	650−675 nm
g. Ọkpụrụkpụ oyi akwa na-agbanwe agbanwe, micron	Ma ọ dịkarịa ala 8 nm
h. Ọkpụrụkpụ oyi akwa (mkpokọta), maịkrọn	Opekata mpe 30 nm

Efere 3 nwere oyi akwa epitaxial
a. Ngbanwe, maịkrọn	Ma ọ dịkarịa ala 100 um
b. Ọkpụrụkpụ, maịkrọn	360−600 um
c. Akụkụ anọ sentimita	Opekata mpe 6 cm2
d. Ike ọkụ kpọmkwem (mgbe mgbasa Zn gasịrị), cd/amp	Opekata mpe 0.05 cd/amp