Gallium arsenide-fosifike epitaxial yubatswe, isa nuburyo bwakozwe muburyo bwa substrate ubwoko bwa ASP (ET0.032.512TU), kuri. gukora planar itukura LED.
Ibikoresho by'ibanze bya tekiniki
kuri gallium arsenide-fosifike
| 1, SubstrateGaAs | |
| a. Ubwoko bw'imyitwarire | ibikoresho bya elegitoroniki |
| b. Kurwanya, ohm-cm | 0,008 |
| c. Crystal-latticeorientation | (100) |
| d. Kugaragara nabi | (1−3) ° |
| 2. Igice cya Epitaxial GaAs1-х Pх | |
| a. Ubwoko bw'imyitwarire | ibikoresho bya elegitoroniki |
| b. Ibirimo bya fosifore murwego rwinzibacyuho | kuva х = 0 kugeza х ≈ 0,4 |
| c. Ibirimo bya fosifore murwego rwo guhora uhimba | х ≈ 0,4 |
| d. Ubwikorezi bwabatwara, сm3 | (0,2−3,0) · 1017 |
| e. Uburebure bwumurongo ntarengwa wa Photoluminescence, nm | 645−673 nm |
| f. Uburebure bwumurongo ntarengwa wa electroluminescence | 650−675 nm |
| g. Umubyimba uhoraho, micron | Nibura 8 nm |
| h. Inzira (yose), micron | Nibura 30 nm |
| 3 Isahani hamwe na epitaxial layer | |
| a. Gutandukana, micron | Hafi 100 um |
| b. Umubyimba, micron | 360−600 um |
| c. Squarecentimetre | Nibura cm 6 |
| d. Imbaraga zidasanzwe (nyuma yo gukwirakwizaZn), cd / amp | Nibura 0,05 cd / amp |
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