gallium arsenide-fosfide epitaxial

Imiterere ya Gallium arsenide-phosfide epitaxial, isa n'imiterere yakozwe yo mu bwoko bwa ASP (ET0.032.512TU), igamije gukora kristu zitukura za LED.

Ibisobanuro birambuye ku gicuruzwa

Imiterere ya Gallium arsenide-phosfide epitaxial, isa n'imiterere yakozwe yo mu bwoko bwa ASP (ET0.032.512TU), igamije gukora kristu zitukura za LED.

Ibipimo by'ibanze bya tekiniki
ku miterere ya gallium arsenide-fosfide

1, SubstrateGaAs
a. Ubwoko bw'imikorere y'amashanyarazi	ikoranabuhanga
b. Gukomera, ohm-cm	0,008
c. Gukurikirana kristalo-lattice	(100)
d. Kutareba neza hejuru y'aho ibintu biherereye	(1−3)°

2. Urwego rwa Epitaxial GaAs1-х Pх
a. Ubwoko bw'imikorere y'amashanyarazi	ikoranabuhanga
b. Ingano ya fosifore mu gice cy'impinduka	kuva kuri х = 0 kugeza kuri х ≈ 0,4
c. Ingano ya fosifore mu gice cy'ibice bidahinduka	х ≈ 0,4
d. Ubwinshi bw'umutwaro, сm3	(0,2−3,0)·1017
e. Uburebure bw'umuraba ku rugero ntarengwa rwa spectrum ya photoluminescence, nm	645−673 nm
f. Uburebure bw'umuraba ku rugero ntarengwa rw'umuraba wa electroluminescence	650−675 nm
g. Ubunini bw'urwego ruhoraho, mikoroni	Nibura 8 nm
h. Ubunini bw'urutonde (igiteranyo), mikoroni	Nibura 30 nm

Isahani 3 ifite urwego rwa epitaxial
a. Guhindura imiterere y'umubiri, mikoroni	Ntarenze 100 um
b. Ubunini, mikoroni	360−600 um
c. Santimetero kare	Nibura cm2 6
d. Ingufu zihariye z'urumuri (nyuma yo gukwirakwira kwa Zn), cd/amp	Nibura 0,05 cd/amp