i-gallium arsenide-phosphide epitaxial

gallium arsenide-phosphide epitaxial Umfanekiso obonakalayo

Inkcazelo emfutshane:

I-Gallium arsenide-phosphide izakhiwo ze-epitaxial ,efana nezakhiwo eziveliswe kwi-substrate yohlobo lwe-ASP (ET0.032.512TU), ukwenzela. ukwenziwa kweekristale ezibomvu ze-LED ezicwangcisiweyo.

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I-Gallium arsenide-phosphide izakhiwo ze-epitaxial ,efana nezakhiwo eziveliswe kwi-substrate yohlobo lwe-ASP (ET0.032.512TU), ukwenzela. ukwenziwa kweekristale ezibomvu ze-LED ezicwangcisiweyo.

Ipharamitha yobugcisa esisiseko
kwi-gallium arsenide-phosphide izakhiwo

1,SubstrateGaAs
a. Uhlobo lokuqhuba	elektroniki
b. Ukuxhathisa, ohm-cm	0,008
c. ICrystal-latticeorientation	(100)
d. Ukungaqondi kakuhle	(1−3) °

2. Umaleko we-Epitaxial GaAs1-х Pх
a. Uhlobo lokuqhuba	elektroniki
b. Umxholo wePhosphorus kumaleko wenguqu	ukusuka х = 0 ukuya х ≈ 0,4
c. Umxholo wePhosphorus kuluhlu lokubunjwa rhoqo	х ≈ 0,4
d. Ugxininiso lomthwali, сm3	(0,2−3,0)·1017
e. Ubude beWaveleng kubuninzi be-photoluminescence spectrum, nm	645−673 nm
f. Ubude bemaza kubuninzi be-electroluminescence spectrum	650−675 nm
g. Ubungqingqwa bemaleko rhoqo, i-micron	Ubuncinci 8 nm
h. Ukutyeba (ibonke), i-micron	Ubuncinci i-30 nm

3 Ipleyiti ene-epitaxial layer
a. Ukuphambuka, micron	Ubuninzi be-100 um
b. Ukutyeba, micron	360−600 um
c. Isikweresentimitha	Ubuncinci yi-6 cm2
d. Ubunzulu obukhethekileyo bokukhanya (emva kwe-diffusionZn), cd/amp	Ubuncinane 0,05 cd/amp