i-gallium arsenide-phosphide epitaxial

gallium arsenide-phosphide epitaxial Umfanekiso obonisiweyo

Inkcazo emfutshane:

Izakhiwo ze-epitaxial ze-Gallium arsenide-phosphide, ezifana nezakhiwo ezivelisweyo zohlobo lwe-ASP substrate (ET0.032.512TU), zokwenza iikristale ze-LED ezibomvu ezicwangcisiweyo.

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Iithegi zeMveliso

Izakhiwo ze-epitaxial ze-Gallium arsenide-phosphide, ezifana nezakhiwo ezivelisweyo zohlobo lwe-ASP substrate (ET0.032.512TU), zokwenza iikristale ze-LED ezibomvu ezicwangcisiweyo.

Ipharamitha yobugcisa esisiseko
kwizakhiwo ze-gallium arsenide-phosphide

1,I-SubstrateGaAs
a. Uhlobo lokuqhuba	nge-elektroniki
b. Ukumelana, ohm-cm	0,008
c. Ukujonga i-crystal-lattice	(100)
d. Ukungaqondi kakuhle komphezulu	(1−3)°

2. Umaleko we-Epitaxial GaAs1-х Pх
a. Uhlobo lokuqhuba	nge-elektroniki
b. Umxholo we-phosphorus kumaleko otshintsho	ukusuka ku-х = 0 ukuya ku-х ≈ 0,4
c. Umxholo we-phosphorus kumaleko wokwakheka okungaguqukiyo	х ≈ 0,4
d. Uxinzelelo lomthwali, сm3	(0,2−3,0)·1017
e. Ubude begagasi kwi-spectrum ye-photoluminescence ephezulu, nm	645−673 nm
f. Ubude bamaza kwi-spectrum ephezulu ye-electroluminescence	650−675 nm
g. Ubukhulu bemaleko obuhlala buhleli, i-micron	Ubuncinane i-8 nm
h. Ubukhulu beeleya (into iyonke), i-micron	Ubuncinane i-30 nm

3 Ipleyiti enomaleko we-epitaxial
a. Ukuphambuka, i-micron	Ubuninzi be-100 um
b. Ubukhulu, i-micron	360−600 um
c. Isikwere seesentimitha	Ubuncinane i-6 cm2
d. Ubunzulu obuthile bokukhanya (emva kokusasazwa kweZn), cd/amp	Ubuncinane i-0,05 cd/amp