gallium arsenide-phosphide epitaxial

Kufotokozera Kwachidule:

Gallium arsenide-phosphide epitaxial structures, yofanana ndi ma structure opangidwa a substrate ASP type (ET0.032.512TU), yopangira ma planar red LED crystals.

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Tsatanetsatane wa Zamalonda

Ma tag a Zamalonda

Gallium arsenide-phosphide epitaxial structures, yofanana ndi ma structure opangidwa a substrate ASP type (ET0.032.512TU), yopangira ma planar red LED crystals.

Gawo loyambira laukadaulo
ku kapangidwe ka gallium arsenide-phosphide

1, SubstrateGaAs
a. Mtundu wa ma conductivity	zamagetsi
b. Kukana, ohm-cm	0,008
c. Kuyang'ana kwa kristalo ndi lattice	(100)
d. Kusokonekera kwa malo ozungulira	(1−3)°

2. Epitaxial layer GaAs1-х Pх
a. Mtundu wa ma conductivity	zamagetsi
b. Kuchuluka kwa phosphorous mu gawo losinthira	kuchokera ku х = 0 mpaka х ≈ 0,4
c. Kuchuluka kwa phosphorous mu gawo la kapangidwe kosasintha	х ≈ 0,4
d. Kuchuluka kwa chonyamulira, сm3	(0,2−3,0)·1017
e. Kutalika kwa mafunde pamlingo wapamwamba kwambiri wa photoluminescence spectrum, nm	645−673 nm
f. Kutalika kwa mafunde pamlingo wapamwamba kwambiri wa electroluminescence spectrum	650−675 nm
g. Kukhuthala kosalekeza kwa gawo, micron	Osachepera 8 nm
h. Kukhuthala kwa gawo (zonse), micron	Osachepera 30 nm

3 Mbale yokhala ndi epitaxial wosanjikiza
a. Kupatuka, micron	Osapitirira 100 um
b. Kukhuthala, micron	360−600 um
c. Sentimita imodzi	Osachepera 6 cm2
d. Mphamvu yeniyeni yowala (pambuyo pa kufalikira kwa Zn), cd/amp	Osachepera 0,05 cd/amp