Gallium arsenide-phosphide epitaxial structures, ofanana ndi mapangidwe amtundu wa ASP substrate (ET0.032.512TU), a. kupanga magalasi ofiira ofiira a LED.
Basic technical parameter
kupangidwa kwa gallium arsenide-phosphide
| 1, SubstrateGaAs | |
| a. Mtundu wa Conductivity | zamagetsi |
| b. Kukana, ohm-cm | 0,008 |
| c. Crystal-latticeorientation | (100) |
| d. Kusokonezeka kwapamtunda | (1−3)° |
| 2. Epitaxial wosanjikiza GaAs1-х Pх | |
| a. Mtundu wa Conductivity | zamagetsi |
| b. Phosphorous mu gawo la kusintha | kuchokera х = 0 mpaka х ≈ 0,4 |
| c. Phosphorous zili mu wosanjikiza wa zonse zikuchokera | h ≈ 0,4 |
| d. Kukhazikika kwa chonyamulira, сm3 | (0,2−3,0)·1017 |
| e. Kutalika kwa mawonekedwe a photoluminescence spectrum, nm | 645-673 nm |
| f. Wavelength pamlingo waukulu wa electroluminescence spectrum | 650-675 nm |
| g. Makulidwe osanjikiza, micron | Pafupifupi 8 nm |
| h. Layerthickness (yonse), micron | Pafupifupi 30 nm |
| 3 mbale yokhala ndi epitaxial layer | |
| a. Kusintha, micron | Pafupifupi 100 um |
| b. Makulidwe, micron | 360-600 mamilimita |
| c. Squarecentimeter | Pafupifupi 6 cm2 |
| d. Kuwala kwachindunji (pambuyo pa diffusionZn), cd/amp | Osachepera 0,05 cd/amp |
