gallium arsenide-phosphide epitaxial

Kiʻi i hōʻike ʻia ma ka epitaxial gallium arsenide-phosphide

Wehewehe Pōkole:

ʻO nā ʻano epitaxial Gallium arsenide-phosphide, like me nā ʻano i hana ʻia o ke ʻano substrate ASP (ET0.032.512TU), no ka hana ʻana i nā kristal LED ʻulaʻula planar.

E leka uila mai iā mākou Hoʻoiho ma ke ʻano he PDF

Nā kikoʻī huahana

Nā Lepili Huahana

ʻO nā ʻano epitaxial Gallium arsenide-phosphide, like me nā ʻano i hana ʻia o ke ʻano substrate ASP (ET0.032.512TU), no ka hana ʻana i nā kristal LED ʻulaʻula planar.

ʻO ke ana loea kumu
i nā ʻano hana gallium arsenide-phosphide

1, SubstrateGaAs
a. ʻAno alakaʻi	uila
b. Ke kū'ē ʻana, ohm-cm	0,008
c. Kūlana kiʻi aniani	(100)
d. Kuhihewa o ka ʻili	(1−3)°

2. Papa Epitaxial GaAs1-х Pх
a. ʻAno alakaʻi	uila
b. Ka nui o ka phosphorus i loko o ka papa hoʻololi	mai х = 0 a i х ≈ 0,4
c. Ka nui o ka phosphorus i loko o kahi papa o ka haku mele mau	х ≈ 0,4
d. Ka nui o ka mea lawe, сm3	(0,2−3,0)·1017
e. Ka lōʻihi o ka nalu ma ka palena kiʻekiʻe o ka spectrum photoluminescence, nm	645−673 nm
f. Ka lōʻihi o ka nalu ma ka palena kiʻekiʻe loa o ka spectrum electroluminescence	650−675 nm
g. Mānoanoa o ka papa mau, micron	Ma ka liʻiliʻi he 8 nm
h. Mānoanoa o ka papa (huina), micron	Ma ka liʻiliʻi he 30 nm

3 Papa me ka papa epitaxial
a. Ka hoʻohuli ʻana, micron	Ma ka nui loa he 100 um
b. Mānoanoa, micron	360−600 um
c. Kenimika huinahā	Ma ka liʻiliʻi he 6 cm2
d. Ka ikaika kukui kikoʻī (ma hope o ka hoʻolaha ʻana o Zn), cd/amp	Ma ka liʻiliʻi he 0,05 cd/amp