gallium arsenide-phosphide epitaxial

ʻO ka wehewehe pōkole:

ʻO Gallium arsenide-phosphide epitaxial structures, e like me nā hale hana o ka substrate ASP type (ET0.032.512TU), no ka. ka hana ʻana i nā kristal LED ʻulaʻula planar.

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ʻO Gallium arsenide-phosphide epitaxial structures, e like me nā hale hana o ka substrate ASP type (ET0.032.512TU), no ka. ka hana ʻana i nā kristal LED ʻulaʻula planar.

Kūlana ʻenehana kumu
i nā hale gallium arsenide-phosphide

1, SubstrateGaAs
a. ʻano conductivity	uila uila
b. Kū'ē, ohm-cm	0,008
c. Kaila-latticeorientation	(100)
d. Ke kuhi hewa ʻana o ka ʻili	(1−3)°

2. Papa epitaxial GaAs1-х Pх
a. ʻano conductivity	uila uila
b. ʻO ka maʻiʻo Phosphorus i ka papa hoʻololi	mai х = 0 a х ≈ 0,4
c. ʻO ka Phosphorus i loko o kahi papa o ka haku mele mau	х ≈ 0,4
d. ʻO ka manaʻo o ka mea lawe, сm3	(0,2−3,0)·1017
e. Ka lōʻihi o ka nalu ma ka palena kiʻekiʻe o ka spectrum photoluminescence, nm	645−673 nm
f. ʻO ka lōʻihi o ka hawewe ma ke kiʻekiʻe loa o ka spectrum electroluminescence	650−675 nm
g. Ka mānoanoa papa mau, micron	Ma kahi o 8 nm
h. Layerthickness (nui), micron	Ma kahi o 30 nm

3 Papa me ka papa epitaxial
a. Hoʻololi, micron	Ma kahi o 100 um
b. Mānoanoa, micron	360−600 um
c. Kenimika huinaha	Ma kahi o 6 cm2
d. Ka ikaika o ka malamalama kiko'ī (ma hope o ka diffusionZn), cd/amp	Ma kahi o 0,05 cd/amp