ʻO ka uhi ʻana o SiC i uhi ʻia me ka substrate Graphite no Semiconductor, Silicon carbide coating, MOCVD Susceptor

ʻO ka uhi ʻana o SiC i uhi ʻia me ka substrate Graphite no Semiconductor, ka uhi ʻana o Silicon carbide, MOCVD Susceptor Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

ʻO ka uhi ʻana o SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe kiʻekiʻe a me ke kūʻē ʻana i ka lewa oxidizing. Hoʻopili ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.

Kahi i hoʻomaka ai:Zhejiang, Kina (Mainland)

Helu Hoʻohālike:Helu Hoʻohālike:

Ka Hoʻohui Kemika:ʻO ka graphite i uhi ʻia me SiC

Ikaika kūlou:470Mpa

Ka hoʻokele wela:300 W/mK

ʻAno:Hemolele loa

Hana:CVD-SiC

Noi:Semiconductor / Photovoltaic

Ka nui o ka paʻa:3.21 g/cc

Hoʻonui wela:4 10-6/K

Lehu: <5ppm

Laʻana:Loaʻa

Kōmike HS:6903100000

E leka uila mai iā mākou Hoʻoiho ma ke ʻano he PDF

Nā kikoʻī huahana

Nā Lepili Huahana

ʻO ka uhi SiC i uhi ʻia meʻO ke kumu graphite no ka Semiconductor,ʻO ka uhi ʻana o ka silicon carbide,Mea Hoʻopaʻa MOCVD,
ʻO ke kumu graphite, ʻO ke kumu graphite no ka Semiconductor, Mea Hoʻopaʻa MOCVD, Uhi ʻana o Silicon Carbide,

ʻO nā pono kūikawā o kā mākou mau mea hoʻopaʻa graphite i uhi ʻia me SiC e komo pū me ka maʻemaʻe kiʻekiʻe loa, ka uhi homogenous a me ke ola lawelawe maikaʻi loa. Loaʻa iā lākou ke kūpaʻa kemika kiʻekiʻe a me nā waiwai kūpaʻa wela.

ʻO ka uhi ʻana o SiCʻO ke kumu graphiteno nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe kiʻekiʻe a me ke kūʻē ʻana i ka lewa oxidizing.
Hoʻopili ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.

ʻO ka mea hoʻopaʻa MOCVD uhi ʻia/uhi ʻia SiC

Nā Hiʻohiʻona:
· Kū'ē Kū'ē Wela Maika'i Loa
· Kū'ē Kū'ē Kino Maika'i Loa
· Kū'ē Kemika Maikaʻi Loa
· Maʻemaʻe Kiʻekiʻe Loa
· Loaʻa i ke ʻano paʻakikī
· Hiki ke hoʻohana ʻia ma lalo o ka Oxidizing Atmosphere

Nā Waiwai Maʻamau o ka Mea Graphite Base:

Ka nui o ka ʻike ʻia:	1.85 g/cm3
Ke kū'ē uila:	11 μΩm
Ikaika Flexural:	49 MPa (500kgf/cm2)
Paʻakikī Kahakai:	58
Lehu:	<5ppm
Ka Hoʻokele Wela:	116 W/mK (100 kcal/mhr-℃)

Hoʻolako ʻo Carbon i nā susceptors a me nā ʻāpana graphite no nā reactors epitaxy o kēia manawa. ʻO kā mākou waihona e komo pū ana me nā susceptors barela no nā ʻāpana i hoʻopili ʻia a me LPE, nā susceptors pancake no nā ʻāpana LPE, CSD, a me Gemini, a me nā susceptors wafer hoʻokahi no nā ʻāpana i hoʻopili ʻia a me ASM. Ma ka hoʻohui ʻana i nā hui ikaika me nā OEM alakaʻi, nā ʻike loea a me ka ʻike hana, hāʻawi ʻo SGL i ka hoʻolālā kūpono no kāu noi.

ʻO ka mea hoʻopaʻa MOCVD uhi ʻia/uhi ʻia SiC