Daahan SiC dahaarka lehSubstrate-ka graphite ee Semiconductordaahan Silicon carbide,Susceptor MOCVD,
Substrate graphite, Substrate-ka graphite ee Semiconductor, Susceptor MOCVD, Dahaarka Silicon Carbide,

Faa'iidooyinka gaarka ah ee kuwa sic-da-daboolan ee garaafyada garaafyada waxaa ka mid ah nadiif aad u sarreeya, daahan isku mid ah iyo nolol adeeg oo aad u wanaagsan. Waxa kale oo ay leeyihiin iska caabin kiimikaad sare leh iyo sifooyin xasilloonida kulaylka.

Dahaarka SiC eeSubstrate graphiteCodsiyada Semiconductor-ka waxay soo saartaa qayb nadiifin sare leh oo iska caabin u ah jawiga oksaydhka.
CVD SiC ama CVI SiC waxaa lagu dabaqaa Graphite qaybo naqshadeed fudud ama kakan. Dahaarka waxaa lagu dabaqi karaa dhumucyo kala duwan iyo qaybo aad u ballaaran.

Astaamaha:
Caabbinta naxdinta kulaylka ee heer sare ah
Iska caabin naxdin jidheed oo heer sare ah
· Iska caabin Kiimiko oo heersare ah
Nadiifinta Sare ee Sare
Helitaanka qaab isku dhafan
Waxaa lagu isticmaali karaa hoostiisa Oxidizing Atmosphere

Astaamaha Caadiga ah ee Qalabka Garaafiga ee Saldhigga:

Kaarboon waxa ay siisaa kuwa wax-is-dajiya iyo qaybaha graphite-ka ee dhammaan reactors epitaxy ee hadda jira. Bootfooliyadayada waxaa ka mid ah kuwa qaboojiyaha foosto oo loogu talagalay qaybaha LPE iyo LPE, kuwa qaboojiyaha canjeelada ee LPE, CSD, iyo Gemini, iyo kuwa hal-wafer ah oo loogu talagalay cutubyada la codsado iyo ASM. Marka la isku daro iskaashi xooggan oo lala yeesho OEM-yada hormuudka ah, khibradda qalabka iyo aqoonta wax soo saarka, SGL waxay bixisaa naqshadda ugu fiican ee codsigaaga.

Alaabooyin badan