I-SiC coating egqunywe yi-Graphite substrate ye-Semiconductor, i-Silicon carbide coating, i-MOCVD Susceptor

Inkcazo emfutshane:

I-SiC coating ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya oxidating. I-CVD SiC okanye i-CVI SiC ifakwa kwi-Graphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. I-coating ingasetyenziswa ngobukhulu obahlukeneyo nakwiindawo ezinkulu kakhulu.

Indawo Yokuqala:E-Zhejiang, eTshayina (eMaphandleni)

Inombolo yoMzekelo:Inombolo yoMzekelo:

Ukwenziwa kweekhemikhali:I-graphite egqunywe yi-SiC

Amandla okugobeka:470Mpa

Ukuqhuba kobushushu:300 W/mK

Umgangatho:Igqibelele

Umsebenzi:I-CVD-SiC

Isicelo:I-semiconductor / i-Photovoltaic

Uxinano:3.21 g/cc

Ukwandiswa kobushushu:4 10-6/K

Uthuthu: <5ppm

Isampuli:Iyafumaneka

Ikhowudi ye-HS:6903100000

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ingubo ye-SiC egqunywe yi-I-substrate ye-Graphite ye-Semiconductor, Ukwaleka nge-silicon carbide,I-MOCVD Susceptor,
Isiseko segrafayithi, I-substrate ye-Graphite ye-Semiconductor, I-MOCVD Susceptor, Ukwaleka kweSilicon Carbide,

Iingenelo ezikhethekileyo ze-susceptors zethu ze-graphite ezine-SiC ziquka ubunyulu obuphezulu kakhulu, ukugquma okufanayo kunye nobomi obugqwesileyo benkonzo. Zikwanokumelana okuphezulu kweekhemikhali kunye neempawu zozinzo lobushushu.

Ukwaleka kwe-SiCIsiseko segrafayithiKwizicelo ze-Semiconductor, inxalenye yayo icocekile kakhulu kwaye iyakwazi ukumelana nomoya oxidayo.
I-CVD SiC okanye i-CVI SiC ifakwa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. I-coating ingafakwa ngobukhulu obahlukeneyo nakwiindawo ezinkulu kakhulu.

I-SiC coating/i-MOCVD Susceptor egqunywe nge-coating

Iimbonakalo:
· Ukumelana kakuhle nobushushu
· Ukumelana kakuhle nomothuko womzimba
· Ukumelana kakuhle kweekhemikhali
· Ucoceko Oluphezulu Kakhulu
· Ukufumaneka kwiMilo eNcinci
· Ingasetyenziswa phantsi kwe-Oxidizing Atmosphere

Iimpawu eziqhelekileyo zezinto ezisisiseko zeGraphite:

Ubuninzi Obubonakalayo:	1.85 g/cm3
Ukumelana nombane:	11 μΩm
Amandla okuGuquka:	I-49 MPa (500kgf/cm2)
Ukuqina koLwandle:	58
Uthuthu:	<5ppm
Ukuqhuba kwe-Thermal:	116 W/mK (100 kcal/mhr-℃)

Ikhabhoni inika ii-susceptors kunye nezinto zegrafiti kuzo zonke ii-reactors ze-epitaxy zangoku. Ipotifoliyo yethu ibandakanya ii-susceptors zebarrel zeeyunithi ezisetyenzisiweyo kunye ne-LPE, ii-susceptors zepancake zeeyunithi ze-LPE, CSD, kunye neGemini, kunye nee-susceptors ze-single-wafer zeeyunithi ezisetyenzisiweyo kunye ne-ASM. Ngokudibanisa ubudlelwane obuqinileyo nee-OEM eziphambili, ulwazi lwezinto kunye nolwazi lokuvelisa, i-SGL inika uyilo olufanelekileyo kwisicelo sakho.

I-SiC coating/i-MOCVD Susceptor egqunywe nge-coating