ungqimba lwe-SiC olumbozwe nge-I-Graphite substrate ye-Semiconductor,Isimbozo se-silicon carbide,I-MOCVD Susceptor,
I-substrate ye-graphite, I-Graphite substrate ye-Semiconductor, I-MOCVD Susceptor, Isimbozo se-Silicon Carbide,

Izinzuzo ezikhethekile zama-susceptor ethu e-graphite ambozwe yi-SiC zifaka phakathi ubumsulwa obuphezulu kakhulu, ukugqoka okufanayo kanye nokuphila kahle kwenkonzo. Futhi anokumelana okuphezulu kwamakhemikhali kanye nezakhiwo zokuqina kokushisa.

ungqimba lwe-SiCI-substrate ye-graphitekwezicelo ze-semiconductor kukhiqiza ingxenye enokuhlanzeka okuphezulu kanye nokumelana nomoya oxidating.
I-CVD SiC noma i-CVI SiC isetshenziswa ku-Graphite yezingxenye ezilula noma eziyinkimbinkimbi zomklamo. Isembozo singasetshenziswa ngobukhulu obuhlukahlukene kanye nasezingxenyeni ezinkulu kakhulu.

Izici:
· Ukumelana Okuhle Kakhulu Nokushisa Okushisayo
· Ukumelana Okuhle Kakhulu Nokwethuka Komzimba
· Ukumelana Okuhle Kakhulu Kwamakhemikhali
· Ukuhlanzeka Okuphezulu Kakhulu
· Ukutholakala ngesimo esiyinkimbinkimbi
· Ingasetshenziswa ngaphansi kwe-Oxidizing Atmosphere

Izakhiwo Ezijwayelekile Zezinto Eziyisisekelo Ze-Graphite:

I-Carbon inikeza ama-susceptor kanye nezingxenye ze-graphite kuzo zonke iziqaphi zamanje ze-epitaxy. Iphothifoliyo yethu ifaka ama-susceptor ebharele amayunithi asetshenzisiwe kanye ne-LPE, ama-susceptor e-pancake amayunithi e-LPE, CSD, kanye ne-Gemini, kanye nama-susceptor e-single-wafer amayunithi asetshenzisiwe kanye ne-ASM. Ngokuhlanganisa ubudlelwano obuqinile nama-OEM ahamba phambili, ubuchwepheshe bezinto zokwakha kanye nolwazi lokukhiqiza, i-SGL inikeza umklamo ofanele kakhulu wohlelo lwakho lokusebenza.

Imikhiqizo Eminingi