Igipfundikizo cya SiC gitwikiriwe na grafiti substrate kuri Semiconductor, Silicon carbide coating, MOCVD Susceptor

Ibisobanuro bigufi:

Gusiga SiC kuri Graphite substrate yo gukoresha Semiconductor bitanga igice gifite ubuziranenge buhanitse kandi kirwanya ikirere gishyushya. CVD SiC cyangwa CVI SiC bishyirwa kuri Graphite y'ibice byoroshye cyangwa bigoye. Gusiga SiC bishobora gushyirwa mu bunini butandukanye no mu bice binini cyane.


  • Aho yaturutse:Zhejiang, Ubushinwa (Mainland)
  • Nimero y'icyitegererezo:Nimero y'icyitegererezo:
  • Ibikubiye mu ruganda:Grafiti itwikiriwe na SiC
  • Imbaraga zo koroha:470Mpa
  • Uburyo bwo gutwara ubushyuhe:300 W/mK
  • Ubwiza:Biratunganye cyane
  • Imikorere:CVD-SiC
  • Porogaramu:Semiconductor / Photovoltaic
  • Ubucucike:3.21 g/cc
  • Kwaguka k'ubushyuhe:4 10-6/K
  • Ivu: <5ppm
  • Urugero:Biraboneka
  • Kode y'Ubwishingizi bw'Ubuzima:6903100000
  • Ibisobanuro birambuye ku gicuruzwa

    Ibirango by'ibicuruzwa

    irangi rya SiC ritwikiriwe naIgice cya grafiti cya Semiconductor,Irangi rya karubide rya silikoni,Umukozi wo mu bwoko bwa MOCVD,
    Igice cya grafiti, Igice cya grafiti cya Semiconductor, Umukozi wo mu bwoko bwa MOCVD, Ukwisiga kwa Silicon Carbide,

    Ibisobanuro by'igicuruzwa

    Ibyiza byihariye by’ibikoresho byacu bya grafiti bifite SiC birimo ubuziranenge bukabije, irangi rihuye neza kandi rimara igihe kirekire. Bifite kandi ubushobozi bwo kudakoresha imiti myinshi ndetse n’ubushyuhe burambye.

    Igipfukisho cya SiC cyaIgice cya grafitiku bijyanye n'ibikoresho bya semiconductor, bitanga igice gifite ubuziranenge buhebuje kandi kirwanya ikirere gishyushya ogisijeni.
    CVD SiC cyangwa CVI SiC bishyirwa kuri Graphite y'ibice byoroshye cyangwa bigoye gushushanya. Gusiga bishobora gushyirwaho ubugari butandukanye no ku bice binini cyane.

    Igikoresho cya SiC/MOCVD Susceptor gitwikiriwe

    Ibiranga:
    · Ubudahangarwa bwiza cyane n'ubushyuhe
    · Ubudahangarwa bwiza cyane bwo guhangana n'ihungabana
    · Ubudahangarwa bwiza cyane bw'ibinyabutabire
    · Ubuziranenge Bukomeye cyane
    · Kuboneka mu buryo bugoye
    · Ikoreshwa munsi y'ikirere gitanga ogisijeni

     

    Imiterere isanzwe y'ibikoresho bya grafiti by'ibanze:

    Ubucucike bugaragara: 1.85 g/cm3
    Ubushobozi bwo guhangana n'amashanyarazi: 11 μΩm
    Ingufu zo Kongera Uburemere: 49 MPa (500kgf/cm2)
    Ubukomere bw'Inkombe: 58
    Ivu: <5ppm
    Ubushobozi bwo gutwara ubushyuhe: 116 W/mK (100 kcal/mhr-℃)

    Karuboni itanga ibikoresho bya susceptors n'ibice bya grafiti kuri reactors zose zigezweho za epitaxy. Porogaramu yacu irimo ibikoresho bya barrel susceptors ku bikoresho byakoreshejwe na LPE, ibikoresho bya pancake susceptors kuri LPE, CSD, na Gemini, hamwe n'ibikoresho bya single-wafer ku bikoresho byakoreshejwe na ASM. Mu guhuza ubufatanye bukomeye n'ibigo bikomeye bya OEM, ubumenyi mu bikoresho n'ubumenyi mu gukora, SGL itanga igishushanyo cyiza cy'ikoreshwa ryawe.

    Igikoresho cya SiC/MOCVD Susceptor gitwikiriweIgikoresho cya SiC/MOCVD Susceptor gitwikiriwe

    Igikoresho cya SiC/MOCVD Susceptor gitwikiriweIgikoresho cya SiC/MOCVD Susceptor gitwikiriwe

    Ibindi Bicuruzwa

    Igikoresho cya SiC/MOCVD Susceptor gitwikiriwe

    Amakuru y'ikigo

    111

    Ibikoresho by'uruganda

    222

    Ububiko

    333

    Impamyabushobozi

    Impamyabumenyi22

    Ibibazo Bikunze Kubazwa

     


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