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SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD

Igicapo cya SiC gitwikiriwe na Graphite substrate ya Semiconductor, Silicon carbide coating, Susceptor ya MOCVD Ikiranga
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD

Ibisobanuro bigufi:

SiC itwikiriye Graphite substrate ya porogaramu ya Semiconductor itanga igice gifite isuku irenze kandi irwanya umwuka wa okiside. CVD SiC cyangwa CVI SiC ikoreshwa kuri Graphite yibice byoroshye cyangwa bigoye gushushanya. Ipitingi irashobora gukoreshwa mubwinshi butandukanye no mubice binini cyane.


  • Aho byaturutse:Zhejiang, Ubushinwa (Mainland)
  • Umubare w'icyitegererezo:Umubare w'icyitegererezo:
  • Ibigize imiti:SiC yashushanyije
  • Imbaraga zoroshye:470Mpa
  • Amashanyarazi:300 W / mK
  • Ubwiza:Biratunganye
  • Igikorwa:CVD-SiC
  • Gusaba:Semiconductor / Photovoltaic
  • Ubucucike:3.21 g / cc
  • Kwiyongera k'ubushyuhe:4 10-6 / K.
  • Ivu: <5ppm
  • Icyitegererezo:Birashoboka
  • HS Code:6903100000
    • Kuramo nka PDF

    Ibicuruzwa birambuye

    Ibicuruzwa

    Igicucu cya SiCIgishushanyo mbonera cya Semiconductor, Carbide ya Carbide,MOCVD,
    Igishushanyo mbonera, Igishushanyo mbonera cya Semiconductor, MOCVD, Silicon Carbide Coating,

    Ibisobanuro ku bicuruzwa

    Ibyiza byihariye bya SiC-yashizwemo na grafite suseptors harimo ubuziranenge buhebuje cyane, gutwikira abantu hamwe nubuzima bwiza bwa serivisi. Bafite kandi imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

    SiCIgishushanyo mbonerakuri Semiconductor porogaramu itanga igice gifite isuku irenze kandi irwanya okiside ikirere.
    CVD SiC cyangwa CVI SiC ikoreshwa kuri Graphite yibice byoroshye cyangwa bigoye gushushanya. Ipitingi irashobora gukoreshwa mubwinshi butandukanye no mubice binini cyane.

    SiC gutwikira / gutwikiriye MOCVD Susceptor

    Ibiranga:
    · Kurwanya Ubushuhe buhebuje
    · Kurwanya umubiri mwiza cyane
    · Kurwanya imiti nziza cyane
    · Ubuziranenge buhebuje
    · Kuboneka muburyo bugoye
    · Irakoreshwa munsi ya Oxidizing Atmosphere

     

    Ibintu bisanzwe bya Base Graphite Ibikoresho:

    Ubucucike bugaragara: 1,85 g / cm3
    Kurwanya amashanyarazi: 11 μΩm
    Icyerekezo cyoroshye: 49 MPa (500kgf / cm2)
    Gukomera ku nkombe: 58
    Ivu: <5ppm
    Amashanyarazi: 116 W / mK (100 kcal / mhr- ℃)

    Carbone itanga susceptors hamwe nibice bya grafite kubintu byose bigezweho. Inshingano zacu zirimo ibishishwa bya barriel kubikoresho byashyizwe mu bikorwa na LPE, ibyokurya bya pancake kubice bya LPE, CSD, na Gemini, hamwe na septor imwe ya wafer kubisabwa hamwe na ASM.Mu guhuza ubufatanye bukomeye hamwe na OEM iyobora, ubumenyi bwibikoresho hamwe nubumenyi bwo kumenya, SGL itanga igishushanyo cyiza cyo gusaba kwawe.

    SiC gutwikira / gutwikiriye MOCVD SusceptorSiC gutwikira / gutwikiriye MOCVD Susceptor

    SiC gutwikira / gutwikiriye MOCVD SusceptorSiC gutwikira / gutwikiriye MOCVD Susceptor

    Ibicuruzwa byinshi

    SiC gutwikira / gutwikiriye MOCVD Susceptor

    Amakuru yisosiyete

    111

    Ibikoresho byo mu ruganda

    222

    Ububiko

    333

    Impamyabumenyi

    Impamyabumenyi22

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