Iphedi yokuphatha iWafer yeSilicon Carbide ehlala ixesha elide

Inkcazo emfutshane:

I-vet-china ibonelela ngePaddle eDurable Silicon Carbide Wafer Handling Paddle egqwesileyo, edibanisa ukusebenza okuphezulu kunye noyilo olutsha ukuqinisekisa ukuphathwa kwe-wafer okusebenzayo nokukhuselekileyo. Ngenxa yokuqina kwayo kunye nokuchaneka kwayo, i-paddle yokuphatha i-wafer ye-silicon carbon ye-vet-china sisixhobo esibalulekileyo kwinkqubo yakho yokuvelisa i-semiconductor, iphucula ukusebenza kakuhle kwemveliso kwaye inciphise umngcipheko wenkunkuma.

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i-vet-china iqinisekisa ukuba yonke i-DurableIphedi yokuphatha iWafer yeSilicon CarbideIsebenza kakuhle kwaye ihlala ixesha elide. Le paddle yokuphatha i-silicon carbide wafer isebenzisa iinkqubo zokuvelisa eziphambili ukuqinisekisa ukuba uzinzo lwayo kunye nokusebenza kwayo kuhlala kubushushu obuphezulu kunye neendawo zokubola kweekhemikhali. Olu yilo lutsha lubonelela ngenkxaso egqwesileyo yokuphatha i-semiconductor wafer, ngakumbi kwimisebenzi ezenzekelayo echanekileyo.

Isikhephe seSiC Cantileverlicandelo elikhethekileyo elisetyenziswa kwizixhobo zokwenza i-semiconductor ezifana ne-oxidation furnace, i-diffusion furnace, kunye ne-annealing furnace, eyona nto isetyenziswa kakhulu kukulayisha nokukhupha i-wafer, ukuxhasa nokuthutha ii-wafers ngexesha leenkqubo zobushushu obuphezulu.

Izakhiwo ezifanayoyeI-SiCci-antiliverpi-addle: isakhiwo se-cantilever, esiqinileyo kwelinye icala kwaye sikhululekile kwelinye, sidla ngokuba noyilo oluthe tyaba nolufana nesikhephe.

Ukusebenzapi-rincipleyeI-SiCci-antiliverpi-addle:

Iphedi ye-cantilever ingahamba phezulu nasezantsi okanye ibuyele umva ngaphakathi kwigumbi lesithando, ingasetyenziselwa ukuhambisa ii-wafers ukusuka kwiindawo zokulayisha ukuya kwiindawo zokucubungula, okanye ngaphandle kweendawo zokucubungula, ixhasa kwaye izinzise ii-wafers ngexesha lokucubungula kubushushu obuphezulu.

Iimpawu ezibonakalayo zeSilicon Carbide ephinde yasetyenziswa
Ipropati	Ixabiso eliqhelekileyo
Ubushushu bokusebenza (°C)	1600°C (eneoksijini), 1700°C (indawo enciphisa umoya)
Umxholo weSiC	> 99.96%
Umxholo wasimahla we-Si	< 0.1%
Unizi lolwapho kuyiwa khona	2.60-2.70 g/cm³
Ukuvuleka okubonakalayo	< 16%
Amandla oxinzelelo	> 600 MPa
Amandla okugoba abandayo	80-90 MPa (20°C)
Amandla okugoba ashushu	90-100 MPa (1400°C)
Ukwandiswa kobushushu @1500°C	4.70 10^-6/°C
Ukuqhuba kobushushu @1200°C	23 W/m•K
Imodulus ethambileyo	240 GPa
Ukumelana noxinzelelo olushushu	Kuhle kakhulu