Inkqubo yokwenziwa kwe-silicon carbide esebenzayo

I-Reaction-sintered silicon carbide yinto ebalulekileyo yobushushu obuphezulu, inamandla amakhulu, ukuqina okuphezulu, ukumelana nokunxiba okuphezulu, ukuxhathisa okuphezulu kwe-corrosion kunye nokumelana ne-oxidation ephezulu kunye nezinye iipropathi ezigqwesileyo, isetyenziswa kakhulu koomatshini, i-aerospace, ishishini lemichiza, amandla kunye nezinye iindawo.

 

1. Ukulungiselela imathiriyeli ekrwada

Ukulungiswa kwe-reactive sintering silicon carbide imathiriyeli ekrwada ikakhulu yikhabhoni kunye nomgubo wesilicon, apho ikhabhoni ingasetyenziselwa izinto ezahlukeneyo ezinekhabhoni, ezifana necoke yamalahle, igraphite, ilahle, njl. njl., umgubo wesilicon udla ngokukhethwa kunye nobungakanani besuntswana le-1-5μm eliphezulu le-silicon powder. Okokuqala, i-carbon kunye ne-silicon powder zixutywe kwinqanaba elithile, zongeza umlinganiselo ofanelekileyo we-binder kunye ne-ejenti yokuhamba, kwaye uvuselela ngokulinganayo. Umxube ufakwa kwibhola yokusila ukuze uqhubele phambili ukuxubana okufanayo kunye nokusila de ubungakanani bamasuntswana bungaphantsi kwe-1μm.

2. Inkqubo yokubumba

Inkqubo yokubumba yenye yamanyathelo aphambili kwimveliso ye-silicon carbide. Iinkqubo zokubumba ezisetyenziswa ngokuqhelekileyo zicinezela ukubumba, ukubumba i-grouting kunye nokubumba okumileyo. Ukubunjwa kweCofa kuthetha ukuba umxube ufakwe kwi-mold kwaye yenziwe ngoxinzelelo lomatshini. Ukubumba i-Grouting kubhekisela ekuxubeni umxube kunye namanzi okanye i-solvent ye-organic, ukuyifaka kwi-mold ngokusebenzisa i-syringe phantsi kweemeko ze-vacuum, kunye nokwenza imveliso egqityiweyo emva kokuma. Uxinzelelo lwe-static lubhekiselele kumxube kwi-mold, phantsi kokhuseleko lwe-vacuum okanye i-atmosphere ye-static yokubumba uxinzelelo, ngokuqhelekileyo kuxinzelelo lwe-20-30MPa.

3. Inkqubo yeSintering

I-Sintering linyathelo eliphambili kwinkqubo yokwenziwa kwe-reaction-sintered silicon carbide. Ubushushu be-Sintering, ixesha lokutshisa, umoya we-sintering kunye nezinye izinto ziya kuchaphazela ukusebenza kwe-silicon carbide yokusabela. Ngokubanzi, ubushushu be-sintering ye-silicon carbide esebenzayo iphakathi kwe-2000-2400 ℃, ixesha lokuntywila lihlala liyiyure ezi-1 ukuya kwezi-3, kwaye umoya we-sintering uhlala une-inert, njenge-argon, i-nitrogen, njalo njalo. Ngexesha le-sintering, umxube uya kusabela kwikhemikhali ukwenza iikristale ze-silicon carbide. Ngelo xesha, ikhabhoni iya kusabela kunye neegesi emoyeni ukuvelisa iigesi ezifana ne-CO kunye ne-CO2, eya kuchaphazela ubuninzi kunye neempawu ze-silicon carbide. Ke ngoko, ukugcinwa kwemeko efanelekileyo ye-sintering kunye nexesha le-sintering kubaluleke kakhulu ekwenzeni i-react-sintered silicon carbide.

4. Inkqubo yasemva konyango

I-Reaction-sintered silicon carbide ifuna inkqubo yonyango emva kokwenziwa. Iinkqubo eziqhelekileyo emva konyango zisebenza ngomatshini, ukugaya, ukupolisha, i-oxidation kunye nokunye. Ezi nkqubo ziyilelwe ukuphucula ukuchaneka kunye nomgangatho womphezulu we-reaction-sintered silicon carbide. Phakathi kwabo, inkqubo yokugaya kunye nepolisha yindlela eqhelekileyo yokucubungula, enokuphucula ukugqiba kunye ne-flatness ye-silicon carbide surface. Inkqubo ye-oxidation inokwenza umaleko we-oxide ukwandisa ukuxhathisa kwe-oxidation kunye nokuzinza kweekhemikhali ze-react-sintered silicon carbide.

Ngamafutshane, ukwenziwa kwe-silicon carbide esebenzayo yinkqubo entsonkothileyo, idinga ukuqonda iintlobo ngeentlobo zetekhnoloji kunye neenkqubo, kubandakanya nokulungiswa kwezinto ezikrwada, inkqubo yokubumba, inkqubo ye-sintering kunye nenkqubo yasemva konyango. Kuphela ngokuqonda ngokupheleleyo obu buchwepheshe kunye neenkqubo ezinokuthi ziveliswe umgangatho ophezulu we-react-sintered silicon carbide ukukhawulelana neemfuno zemimandla eyahlukeneyo yesicelo.