Inkqubo yokuvelisa i-reactive sintering silicon carbide

I-reaction-sintered silicon carbide sisixhobo esibalulekileyo esinobushushu obuphezulu, esinamandla aphezulu, ubulukhuni obuphezulu, ukumelana nokuguguleka okuphezulu, ukumelana nokugqwala okuphezulu kunye nokumelana nokuxinana okuphezulu kunye nezinye iimpawu ezintle, isetyenziswa kakhulu koomatshini, kwi-aerospace, kushishino lweekhemikhali, kumandla nakwezinye iindawo.

 

1. Ukulungiswa kwezinto eziluhlaza

Ukulungiswa kwezinto eziluhlaza ze-reactive sintering silicon carbide ikakhulu yi-carbon kunye ne-silicon powder, apho i-carbon ingasetyenziswa khona, izinto ezahlukeneyo eziqulethe i-carbon, ezifana ne-coal coke, i-graphite, i-charcoal, njl., i-silicon powder idla ngokukhethwa ngobukhulu be-particle obuyi-1-5μm high purity silicon powder. Okokuqala, i-carbon kunye ne-silicon powder zixutywa ngomlinganiselo othile, zongeza ubungakanani obufanelekileyo be-binder kunye ne-flow agent, kwaye zixutywe ngokulinganayo. Emva koko umxube ufakwa kwi-ball mill ukuze kugaywe ibhola ukuze kuxutywe kwaye kugaywe ngokulinganayo de ubungakanani be-particle bube ngaphantsi kwe-1μm.

2. Inkqubo yokubumba

Inkqubo yokubumba yenye yamanyathelo aphambili ekwenzeni i-silicon carbide. Iinkqubo zokubumba ezisetyenziswa kakhulu kukubumba ngokucinezela, ukubumba nge-grouting kunye nokubumba nge-static. Ukubumba nge-press kuthetha ukuba umxube ufakwa kwi-mold kwaye wenziwe ngoxinzelelo loomatshini. Ukubumba nge-grouting kubhekisa ekuxubeni umxube namanzi okanye i-organic solvent, ukuwufaka kwi-mold ngesirinji phantsi kweemeko ze-vacuum, kunye nokwenza imveliso egqityiweyo emva kokuma. Ukubumba nge-static pressure kubhekisa kumxube kwi-mold, phantsi kokhuseleko lwe-vacuum okanye i-atmosphere yokubumba nge-static pressure, ngesiqhelo kuxinzelelo lwe-20-30MPa.

3. Inkqubo yokuhluza

Ukusinta linyathelo elibalulekileyo kwinkqubo yokwenziwa kwe-reactive-sintered silicon carbide. Ubushushu bokusinta, ixesha lokusinta, umoya wokusinta kunye nezinye izinto ziya kuchaphazela ukusebenza kwe-reactive-sintered silicon carbide. Ngokubanzi, ubushushu bokusinta be-reactive sintering silicon carbide buphakathi kwe-2000-2400℃, ixesha lokusinta ngokubanzi liyiyure eli-1-3, kwaye umoya wokusinta uhlala ungangeni, njenge-argon, i-nitrogen, njalo njalo. Ngexesha lokusinta, umxube uya kudlula kwi-chemical reaction ukuze wenze iikristale ze-silicon carbide. Kwangaxeshanye, ikhabhoni iya kusabela neegesi ezikwi-atmosphere ukuvelisa iigesi ezifana ne-CO kunye ne-CO2, eziya kuchaphazela uxinano kunye neempawu ze-silicon carbide. Ke ngoko, ukugcina umoya wokusinta ofanelekileyo kunye nexesha lokusinta kubaluleke kakhulu ekwenzeni i-reactive-sintered silicon carbide.

4. Inkqubo yasemva konyango

I-reaction-sintered silicon carbide ifuna inkqubo emva konyango emva kokuveliswa. Iinkqubo eziqhelekileyo emva konyango zii-machining, grinding, polishing, oxidation njalo njalo. Ezi nkqubo zenzelwe ukuphucula ukuchaneka kunye nomgangatho womphezulu we-reaction-sintered silicon carbide. Phakathi kwazo, inkqubo yokugaya kunye nokupolisha yindlela eqhelekileyo yokucubungula, enokuphucula ukugqitywa kunye nokuthe tyaba komphezulu we-silicon carbide. Inkqubo ye-oxidation inokwenza umaleko we-oxide ukuphucula ukumelana ne-oxidation kunye nokuzinza kweekhemikhali kwe-reaction-sintered silicon carbide.

Ngamafutshane, ukwenziwa kwe-reactive sintering silicon carbide yinkqubo entsonkothileyo, kufuneka ube nobuchule kunye neenkqubo ezahlukeneyo, kubandakanya ukulungiswa kwezinto eziluhlaza, inkqubo yokubumba, inkqubo yokucoca kunye nenkqubo yasemva konyango. Kuphela kukuziqonda ngokupheleleyo ezi teknoloji kunye neenkqubo apho izinto ze-silicon carbide ezikumgangatho ophezulu ezinokwenziwa ukuhlangabezana neemfuno zamacandelo ahlukeneyo okusetyenziswa.