ʻOkika Wera o ka Silicon Crystal Hoʻokahi

ʻO ke kūkulu ʻia ʻana o ka silicon dioxide ma luna o ka ʻili o ka silicon ua kapa ʻia ʻo oxidation, a ʻo ka hoʻokumu ʻana o ka silicon dioxide paʻa a paʻa loa i alakaʻi i ka hānau ʻana o ka ʻenehana planar circuit integrated silicon. ʻOiai he nui nā ala e ulu pololei ai ka silicon dioxide ma luna o ka ʻili o ka silicon, hana pinepine ʻia ia e ka oxidation thermal, ʻo ia hoʻi ke hōʻike ʻana i ka silicon i kahi kaiapuni oxidizing wela kiʻekiʻe (oxygen, wai). Hiki i nā ʻano oxidation thermal ke kāohi i ka mānoanoa o ka ʻili a me nā ʻano interface silicon/silicon dioxide i ka wā o ka hoʻomākaukau ʻana i nā ʻili silicon dioxide. ʻO nā ʻano hana ʻē aʻe no ka ulu ʻana o ka silicon dioxide he plasma anodization a me ka wet anodization, akā ʻaʻole i hoʻohana nui ʻia kekahi o kēia mau ʻano hana i nā kaʻina hana VLSI.

Hōʻike ka Silicon i kahi ʻano e hana ai i ka silicon dioxide paʻa. Inā hōʻike ʻia ka silicon i ʻoki hou ʻia i kahi kaiapuni oxidizing (e like me ka oxygen, ka wai), e hana ia i kahi papa oxide lahilahi loa (<20Å) ʻoiai i ka mahana o ka lumi. Ke hōʻike ʻia ka silicon i kahi kaiapuni oxidizing i ka mahana kiʻekiʻe, e hana ʻia kahi papa oxide mānoanoa ma ka wikiwiki. Ua maopopo maikaʻi ke ʻano kumu o ka hoʻokumu ʻana o ka silicon dioxide mai ka silicon. Ua hoʻomohala ʻo Deal lāua ʻo Grove i kahi kumu hoʻohālike makemakika e wehewehe pono ana i ka dynamics ulu o nā kiʻiʻoniʻoni oxide mānoanoa ma mua o 300Å. Ua manaʻo lākou e hana ʻia ka oxidation ma ke ʻano penei, ʻo ia hoʻi, ʻo ka oxidant (nā mole wai a me nā mole oxygen) e hoʻolaha ma o ka papa oxide e kū nei i ka interface Si/SiO2, kahi e hana ai ka oxidant me ka silicon e hana i ka silicon dioxide. Ua wehewehe ʻia ka hopena nui e hana ai i ka silicon dioxide penei:

Hana ʻia ka hopena oxidation ma ka interface Si/SiO2, no laila ke ulu ka papa oxide, hoʻopau mau ʻia ka silicon a hoʻouka mālie ka interface i ka silicon. Wahi a ka density like a me ke kaumaha molekala o ka silicon a me ka silicon dioxide, hiki ke ʻike ʻia ʻo ka silicon i hoʻopau ʻia no ka mānoanoa o ka papa oxide hope loa he 44%. Ma kēia ʻano, inā ulu ka papa oxide i 10,000Å, e hoʻopau ʻia ka 4400Å o ka silicon. He mea nui kēia pilina no ka helu ʻana i ke kiʻekiʻe o nā ʻanuʻu i hana ʻia ma luna o kawafer siliconʻO nā ʻanuʻu ka hopena o nā helu oxidation like ʻole ma nā wahi like ʻole ma ka ʻili wafer silicon.

Hoʻolako pū mākou i nā huahana graphite a me silicon carbide kiʻekiʻe-maʻemaʻe, kahi i hoʻohana nui ʻia i ka hana wafer e like me ka oxidation, diffusion, a me ka annealing.

Hoʻokipa i nā mea kūʻai mai nā wahi a puni o ka honua e kipa mai iā mākou no kahi kūkākūkā hou aku!

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