Kupisa kweSirikoni imwe chete yeCrystal

Kuumbwa kwesilicon dioxide pamusoro pesilicon kunonzi oxidation, uye kugadzirwa kwesilicon dioxide yakagadzikana uye inonamatira zvakasimba kwakaita kuti pave nekugadzirwa kwetekinoroji ye silicon integrated circuit planar. Kunyangwe paine nzira dzakawanda dzekukura silicon dioxide zvakananga pamusoro pesilicon, inowanzoitwa ne thermal oxidation, iyo iri kuratidza silicon munzvimbo ine oxidizing inodziya zvakanyanya (oxygen, mvura). Nzira dze thermal oxidation dzinogona kudzora ukobvu hwefirimu uye hunhu hwe silicon/silicon dioxide interface panguva yekugadzirira mafirimu e silicon dioxide. Dzimwe nzira dzekurima silicon dioxide ndeye plasma anodization uye wet anodization, asi hapana kana imwe yenzira idzi yakashandiswa zvakanyanya mumaitiro eVLSI.

Silicon inoratidza katsika kekuumba silicon dioxide yakagadzikana. Kana silicon ichangobva kupatsanurwa ikasangana nenzvimbo ine oxidizing (senge oxygen, mvura), inoumba oxide layer yakatetepa (<20Å) kunyangwe patembiricha yemumba. Kana silicon ikasangana nenzvimbo ine oxidizing patembiricha yepamusoro, oxide layer yakakora inogadzirwa nekukurumidza. Maitiro ekutanga ekuumbwa kwesilicon dioxide kubva kusilicon anonzwisiswa zvakanaka. Deal naGrove vakagadzira modhi yemasvomhu inotsanangura nemazvo kukura kwemafirimu e oxide akakora kupfuura 300Å. Vakakurudzira kuti oxidation iitwe nenzira inotevera, kureva kuti, oxidant (mamorekuru emvura nemamorekuru e oxygen) inopararira kuburikidza ne oxide layer iripo kuenda kuSi/SiO2 interface, uko oxidant inobatana nesilicon kuumba silicon dioxide. Maitiro makuru ekugadzira silicon dioxide anotsanangurwa seizvi:

Kugadziriswa kwe oxidation kunoitika paSi/SiO2 interface, saka kana oxide layer ichikura, silicon inoramba ichidyiwa uye interface yacho inopinda zvishoma nezvishoma mu silicon. Zvichienderana nehuwandu hwakaenzana uye huremu hwemamorekuru e silicon ne silicon dioxide, zvinogona kuwanikwa kuti silicon inodyiwa paukobvu hwekupedzisira kwe oxide layer i44%. Nenzira iyi, kana oxide layer ikakura 10,000Å, 4400Å ye silicon ichadyiwa. Hukama uhwu hwakakosha pakuverenga kukwirira kwematanho akaumbwa pachifukidziro chesiliconMatanho acho anokonzerwa nekusiyana kwehuwandu hweoxidation munzvimbo dzakasiyana pamusoro pesilicon wafer.

Isu tinopawo zvigadzirwa zve graphite ne silicon carbide zvine hutsanana hwakanyanya, izvo zvinoshandiswa zvakanyanya mukugadzirisa wafer senge oxidation, diffusion, uye annealing.

Gamuchirai vatengi vanobva kumativi ese epasi kuti vatishanyire kuti tikurukure zvakawanda!

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