Ukwakheka kwe-silicon dioxide ebusweni be-silicon kubizwa ngokuthi i-oxidation, kanti ukudalwa kwe-silicon dioxide eqinile futhi enamathela ngokuqinile kwaholela ekuzalweni kobuchwepheshe be-silicon integrated circuit planar. Nakuba kunezindlela eziningi zokukhulisa i-silicon dioxide ngqo ebusweni be-silicon, ngokuvamile kwenziwa nge-thermal oxidation, okuwukuveza i-silicon endaweni yokushisa okuphezulu (i-oxygen, amanzi). Izindlela ze-thermal oxidation zingalawula ukujiya kwefilimu kanye nezici ze-silicon/silicon dioxide interface ngesikhathi sokulungiselela amafilimu e-silicon dioxide. Amanye amasu okukhulisa i-silicon dioxide yi-plasma anodization kanye ne-wet anodization, kodwa ayikho kulezi zindlela ezisetshenziswe kabanzi ezinqubweni ze-VLSI.
I-Silicon ikhombisa ukuthambekela kokwakha i-silicon dioxide ezinzile. Uma i-silicon esanda kuqhekeka ivezwa endaweni ekhipha i-oxidation (njenge-oxygen, amanzi), izokwakha ungqimba lwe-oxide oluncane kakhulu (<20Å) ngisho nasemazingeni okushisa asekamelweni. Lapho i-silicon ivezwa endaweni ekhipha i-oxidation ekushiseni okuphezulu, ungqimba lwe-oxide olujiyile luzokhiqizwa ngesivinini esisheshayo. Indlela eyisisekelo yokwakheka kwe-silicon dioxide kusuka ku-silicon iyaqondakala kahle. I-Deal ne-Grove bathuthukise imodeli yezibalo echaza ngokunembile amandla okukhula kwamafilimu e-oxide ajiyile kuno-300Å. Baphakamisa ukuthi i-oxidation yenziwe ngale ndlela elandelayo, okungukuthi, i-oxidant (ama-molecule amanzi nama-molecule e-oxygen) isakazeka ngengqimba ye-oxide ekhona iye esibonakalayo se-Si/SiO2, lapho i-oxidant isabela khona ne-silicon ukuze yakhe i-silicon dioxide. Ukusabela okuyinhloko ekwakheni i-silicon dioxide kuchazwa kanje:
Ukusabela kwe-oxidation kwenzeka endaweni yokuxhumana ye-Si/SiO2, ngakho-ke lapho ungqimba lwe-oxide lukhula, i-silicon idliwa njalo futhi indawo yokuxhumana ihlasela i-silicon kancane kancane. Ngokusho kobuningi obuhambisanayo kanye nesisindo sama-molecule se-silicon ne-silicon dioxide, kungatholakala ukuthi i-silicon esetshenziswayo ngobukhulu bengqimba yokugcina ye-oxide ingu-44%. Ngale ndlela, uma ungqimba lwe-oxide lukhula ngo-10,000Å, kuzosetshenziswa u-4400Å we-silicon. Lobu budlelwano bubalulekile ekubaleni ukuphakama kwezinyathelo ezakhiwe ku-i-silicon waferIzinyathelo ziwumphumela wamazinga ahlukene okushiswa kwe-oxidation ezindaweni ezahlukene ebusweni be-silicon wafer.
Siphinde sinikeze imikhiqizo ye-graphite ne-silicon carbide ehlanzekile kakhulu, esetshenziswa kabanzi ekucubungulweni kwe-wafer njenge-oxidation, diffusion, kanye ne-annealing.
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Isikhathi sokuthunyelwe: Novemba-13-2024