Gushyira ubushyuhe muri Silicone imwe ya Crystal

Ikorwa rya dioxyde ya silikoni ku buso bwa silikoni ryitwa oxidation, kandi kuremwa kwa dioxyde ya silikoni ihamye kandi ifata neza byatumye habaho ikoranabuhanga rya silikoni rihuza uruziga. Nubwo hari uburyo bwinshi bwo gukura dioxyde ya silikoni ku buso bwa silikoni, akenshi bikorwa hakoreshejwe oxidation y'ubushyuhe, ari byo gushyira silikoni mu kirere gishyuha cyane (ogisijeni, amazi). Uburyo bwo kugabanya ubushyuhe bushobora kugenzura ubunini bwa filime n'imiterere ya silikoni/dioxyde ya silikoni mu gihe cyo gutegura filime za silikoni. Ubundi buryo bwo guhinga dioxyde ya silikoni ni anodization ya plasma na anodization y'amazi, ariko nta na bumwe muri ubu buryo bwigeze bukoreshwa cyane mu mikorere ya VLSI.

Silikoni igaragaza ko ikunda gukora dioxyde ya silikoni ihamye. Iyo silikoni iherutse gucikamo ibice ihuye n’ahantu hatera oxyde (nk'umwuka wa ogisijeni, amazi), izakora urwego rworoshye cyane rwa oxyde (<20Å) ndetse no ku bushyuhe bw'icyumba. Iyo silikoni ihuye n'ahantu hatera oxyde ku bushyuhe bwinshi, urwego rwo hejuru rwa oxyde ruzakorwa ku muvuduko wihuta. Uburyo bw'ibanze bwo gukora dioxyde ya silikoni ivuye kuri silikoni burasobanuka neza. Deal na Grove bakoze icyitegererezo cy'imibare gisobanura neza imiterere y'imikurire ya oxide films nini kurusha 300Å. Bavuze ko oxyde ikorwa muri ubu buryo bukurikira, ni ukuvuga ko oxyde (molecules z'amazi na molecules za ogisijeni) ikwirakwira mu urwego rwa oxyde ruriho rugana ku gice cya Si/SiO2, aho oxyde ikorana na silikoni kugira ngo ikore dioxyde ya silikoni. Uburyo bw'ingenzi bwo gukora dioxyde ya silikoni busobanurwa gutya:

Uburyo bwo kugabanya ubushyuhe bubaho ku gice cya Si/SiO2, bityo iyo urwego rwa okiside rukura, silicon irakoreshwa buri gihe kandi urwego rugenda rwinjira muri silicon buhoro buhoro. Dukurikije ubucucike bujyanye n'uburemere bwa silicon na silicon dioxide, byaboneka ko silicon ikoreshwa ku bunini bw'urwego rwa okiside rwa nyuma ari 44%. Muri ubu buryo, niba urwego rwa okiside rukura 10.000Å, 4400Å bya silicon bizakoreshwa. Iyi sano ni ingenzi mu kubara uburebure bw'intambwe zakozwe kuriagace k'icyuma ka silikoniIntambwe ni ingaruka z'umuvuduko utandukanye wa oxidation ahantu hatandukanye ku buso bwa silicon wafer.

Dutanga kandi ibicuruzwa bya grafiti na silicon carbide bifite isuku nyinshi, bikoreshwa cyane mu gutunganya wafer nka oxidation, diffusion, na annealing.

Murakaza neza abakiriya bose baturutse impande zose z'isi baza kudusura kugira ngo tuganireho byinshi!

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