I-Oxidation yobushushu yeSilicon esiSinye seCrystal

Ukwenziwa kwe-silicon dioxide phezu komphezulu we-silicon kubizwa ngokuba yi-oxidation, kwaye ukudalwa kwe-silicon dioxide ezinzileyo nenamathelayo kakhulu kukhokelele ekuzalweni kwetekhnoloji ye-silicon integrated circuit planar. Nangona kukho iindlela ezininzi zokukhulisa i-silicon dioxide ngqo kumphezulu we-silicon, kudla ngokwenziwa yi-thermal oxidation, eyokuveza i-silicon kwindawo enobushushu obuphezulu (i-oxygen, amanzi). Iindlela ze-thermal oxidation zinokulawula ubukhulu befilimu kunye neempawu ze-silicon/silicon dioxide ngexesha lokulungiselela iifilimu ze-silicon dioxide. Ezinye iindlela zokukhulisa i-silicon dioxide yi-plasma anodization kunye ne-wet anodization, kodwa akukho nanye kwezi ndlela esetyenziswe kakhulu kwiinkqubo ze-VLSI.

I-Silicon ibonisa ukuthambekela kokwenza i-silicon dioxide ezinzileyo. Ukuba i-silicon esandul’ ukuqhekeka ivezwa kwindawo ekhupha i-oxidizing (njenge-oxygen, amanzi), iya kwenza umaleko we-oxide omncinci kakhulu (<20Å) nokuba kubushushu begumbi. Xa i-silicon ivezwa kwindawo ekhupha i-oxidizing kubushushu obuphezulu, umaleko we-oxide otyebileyo uya kuveliswa ngesantya esikhawulezayo. Indlela esisiseko yokwenziwa kwe-silicon dioxide evela kwi-silicon iyaqondakala kakuhle. I-Deal kunye ne-Grove baphuhlise imodeli yemathematika echaza ngokuchanekileyo amandla okukhula kweefilimu ze-oxide ezityebileyo kune-300Å. Bacebise ukuba i-oxidation yenziwe ngale ndlela ilandelayo, oko kukuthi, i-oxidant (ii-molecule zamanzi kunye nee-molecule ze-oxygen) iyasasazeka ngokusebenzisa umaleko we-oxide okhoyo ukuya kwi-interface ye-Si/SiO2, apho i-oxidant isabela khona ne-silicon ukwenza i-silicon dioxide. Impendulo ephambili yokwenza i-silicon dioxide ichazwa ngolu hlobo lulandelayo:

I-oxidation reaction yenzeka kwi-Si/SiO2 interface, ngoko ke xa i-oxide layer ikhula, i-silicon iyasetyenziswa rhoqo kwaye i-interface ingena kancinci kancinci kwi-silicon. Ngokwe-density ehambelanayo kunye nobunzima be-molecular ye-silicon kunye ne-silicon dioxide, kunokufunyaniswa ukuba i-silicon esetyenziswayo kubukhulu be-oxide layer yokugqibela yi-44%. Ngale ndlela, ukuba i-oxide layer ikhula ibe yi-10,000Å, i-4400Å ye-silicon iya kudliwa. Olu lwalamano lubalulekile ekubaleni ukuphakama kwamanyathelo enziwe kwi-i-silicon waferLa manyathelo abangelwa kukutshintshatshintsha kwamazinga okwenziwa kwe-oxidation kwiindawo ezahlukeneyo kumphezulu we-silicon wafer.

Sikwabonelela ngeemveliso zegrafiti kunye ne-silicon carbide ezicocekileyo kakhulu, ezisetyenziswa kakhulu ekucubunguleni i-wafer efana ne-oxidation, diffusion, kunye ne-annealing.

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