Kutenthetsa kwa Kutentha kwa Silikoni Yokha ya Crystal

Kupangidwa kwa silicon dioxide pamwamba pa silicon kumatchedwa oxidation, ndipo kupangidwa kwa silicon dioxide yokhazikika komanso yogwirizana kwambiri kunayambitsa kubadwa kwa ukadaulo wa silicon integrated circuit planar. Ngakhale pali njira zambiri zokulira silicon dioxide mwachindunji pamwamba pa silicon, nthawi zambiri zimachitika ndi kutentha kwa oxidation, komwe ndi kuwonetsa silicon kumalo otentha kwambiri (mpweya, madzi). Njira zotenthetsera kutentha zimatha kuwongolera makulidwe a filimu ndi mawonekedwe a silicon/silicon dioxide panthawi yokonzekera mafilimu a silicon dioxide. Njira zina zokulira silicon dioxide ndi plasma anodization ndi wet anodization, koma palibe njira izi zomwe zagwiritsidwa ntchito kwambiri mu njira za VLSI.

Silikoni imasonyeza chizolowezi chopanga silicon dioxide yokhazikika. Ngati silicon yodulidwa kumene ikakumana ndi malo oundana (monga mpweya, madzi), imapanga gawo lochepa kwambiri la oxide (<20Å) ngakhale kutentha kwa chipinda. Silikoni ikakumana ndi malo oundana pa kutentha kwakukulu, gawo lokhuthala la oxide lidzapangidwa mofulumira kwambiri. Njira yoyambira yopangira silicon dioxide kuchokera ku silicon ikumveka bwino. Deal ndi Grove adapanga chitsanzo cha masamu chomwe chimafotokoza molondola momwe mafilimu a oxide amakulira kuposa 300Å. Adanenanso kuti oxidation imachitika motere, ndiko kuti, oxidant (mamolekyulu amadzi ndi mamolekyulu a oxygen) amafalikira kudzera mu gawo la oxide lomwe lilipo kupita ku mawonekedwe a Si/SiO2, komwe oxidant imakumana ndi silicon kuti ipange silicon dioxide. Yankho lalikulu popanga silicon dioxide lafotokozedwa motere:

Kuchuluka kwa okosijeni kumachitika pa Si/SiO2 interface, kotero pamene oxide layer ikukula, silicon imadyedwa nthawi zonse ndipo silicon imalowa pang'onopang'ono. Malinga ndi kuchuluka kofanana ndi kulemera kwa molekyulu ya silicon ndi silicon dioxide, zitha kupezeka kuti silicon yomwe imagwiritsidwa ntchito pa makulidwe a oxide layer yomaliza ndi 44%. Mwanjira imeneyi, ngati oxide layer ikukula 10,000Å, 4400Å ya silicon idzadyedwa. Ubale uwu ndi wofunikira powerengera kutalika kwa masitepe opangidwa pachokulungira cha silikoniMasitepewa ndi zotsatira za kuchuluka kwa okosijeni m'malo osiyanasiyana pamwamba pa silicon wafer.

Timaperekanso zinthu za graphite ndi silicon carbide zoyera kwambiri, zomwe zimagwiritsidwa ntchito kwambiri pokonza ma wafer monga oxidation, diffusion, ndi annealing.

Takulandirani makasitomala ochokera padziko lonse lapansi kuti adzatichezere kuti tikambirane zambiri!

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