Iskar Oxidation ta Zafin Jiki na Silikon Crystal Guda Ɗaya

Samuwar silicon dioxide a saman silicon ana kiransa oxidation, kuma ƙirƙirar silicon dioxide mai karko da ƙarfi ya haifar da ƙirƙirar fasahar silinda mai haɗaka kai tsaye a saman silicon. Kodayake akwai hanyoyi da yawa don haɓaka silicon dioxide kai tsaye a saman silicon, yawanci ana yin sa ta hanyar oxidation na thermal, wanda shine don fallasa silicon zuwa yanayin iskar oxygen mai zafi (oxygen, ruwa). Hanyoyin oxidation na thermal na iya sarrafa kauri fim ɗin da halayen haɗin silicon/silicon dioxide yayin shirya fina-finan silicon dioxide. Sauran dabarun girma silicon dioxide sune anodization na plasma da anodization mai danshi, amma ba a yi amfani da ɗayan waɗannan dabarun sosai a cikin hanyoyin VLSI ba.

Silicon yana nuna halin samar da silikon dioxide mai karko. Idan aka fallasa silikon da aka yanke sabo ga yanayin iskar oxygen (kamar iskar oxygen, ruwa), zai samar da silikon oxide mai siriri (<20Å) koda a zafin jiki na ɗaki. Lokacin da silikon ya fallasa ga yanayin iskar oxygen a zafin jiki mai yawa, za a samar da kauri mai kauri mai oxide a cikin sauri. An fahimci tsarin asali na samuwar silikon dioxide daga silikon sosai. Deal and Grove sun haɓaka samfurin lissafi wanda ya bayyana daidai yanayin girma na fina-finan oxide mai kauri fiye da 300Å. Sun ba da shawarar cewa ana gudanar da iskar oxygen ta hanyar da ta biyo baya, wato, oxidant (ƙwayoyin ruwa da ƙwayoyin oxygen) suna yaɗuwa ta cikin layin oxide da ke akwai zuwa hanyar haɗin Si/SiO2, inda oxidant ke amsawa da silikon don samar da silikon dioxide. Babban martanin samar da silikon dioxide an bayyana shi kamar haka:

Haɗarin iskar shaka yana faruwa ne a mahaɗin Si/SiO2, don haka lokacin da Layer ɗin oxide ya girma, ana ci gaba da amfani da silicon kuma mahaɗin yana mamaye silicon a hankali. Dangane da yawan silicon da nauyin kwayoyin halitta da ya dace, za a iya gano cewa silicon da aka cinye don kauri na Layer ɗin oxide na ƙarshe shine 44%. Ta wannan hanyar, idan Layer ɗin oxide ya girma 10,000Å, za a cinye 4400Å na silicon. Wannan alaƙar tana da mahimmanci don ƙididdige tsayin matakan da aka kafa akanwafer ɗin siliconMatakan sun samo asali ne sakamakon bambancin yawan iskar shaka a wurare daban-daban a saman silicon wafer.

Muna kuma samar da samfuran graphite mai tsarki da silicon carbide, waɗanda ake amfani da su sosai wajen sarrafa wafer kamar oxidation, diffusion, da annealing.

Barka da zuwa ga duk wani kwastomomi daga ko'ina cikin duniya don ziyarce mu don ƙarin tattaunawa!

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