I-IC Silicon Enye-Crystal Epitaxy

I-IC Eyodwa-Crystal Silicon Epitaxy Umfanekiso obonakalayo

Inkcazelo emfutshane:

Indawo yemvelaphi:eTshayina

Ulwakhiwo lweCrystal :isigaba seFCCβ

Ubuninzi :3.21 g/cm;

Ukuqina:2500 Vickers;

Ubungakanani benkozo :2~10μm;

Ukucoceka kwemichiza:99.99995%;

Umthamo wobushushu :640J·kg-1·K-1;

Iqondo lobushushu elingaphantsi :2700℃;

Amandla eFelexural:415 Mpa (RT 4-Point);

Imodyuli eNtsha:430 Gpa (4pt bend, 1300℃);

Ukwandiswa kweThermal (CTE) :4.5 10-6K-1;

I-Thermal Conductivity:300(W/MK);

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iiseramikhi kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli ze-SiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenza umaleko wokhuselo we-SIC.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	iFCC β isigaba
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Iqondo lobushushu elisezantsi	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300