IC Single-Crystal Silicon Epitaxy

Sharaxaad Gaaban:

Meesha Asalka ah:Shiinaha

Qaab-dhismeedka Crystal:Marxaladda FCCβ

Cufnaanta:3.21 g/cm;

Adkaanta:2500 Vickers;

Cabbirka Badarka:2 ~ 10μm;

Nadiifinta Kiimikada:99.99995%;

Awoodda Kulaylka:640J·kg-1·K-1;

Heerkulka Sublimation:2700℃;

Xoogga Feexural:415 Mpa (RT 4-Dhibcood);

Modulus-ka Young:430 Gpa (4pt laab, 1300℃);

Ballaarinta Kulaylka (CTE):4.5 10-6K-1;

Qaboojinta Kulaylka:300 (W/MK);

Noo soo dir emayl Soo dejiso sida PDF ahaan

Faahfaahinta Badeecada

Calaamadaha Alaabta

Sharaxaadda Badeecada

Shirkaddayadu waxay bixisaa adeegyada habka dahaarka SiC iyadoo la adeegsanayo habka CVD ee dusha sare ee garaafitka, dhoobada iyo agabyada kale, si gaasaska gaarka ah ee ka kooban kaarboon iyo silikoon ay uga falceliyaan heerkulka sare si ay u helaan molecules-ka SiC ee saafiga ah, molecules-ka lagu shubo dusha sare ee agabka dahaarka leh, iyagoo sameeya lakab ilaalin SIC ah.

Astaamaha ugu muhiimsan:

1. Iska caabinta oksaydhka heerkulka sare:

Iska caabbinta oksaydhku wali aad bay u fiican tahay marka heerkulku uu gaaro 1600 C.

2. Nadiifnimo sare: waxaa lagu sameeyaa kaydka uumiga kiimikada iyadoo lagu jiro xaalad koloriin heerkul sare leh.

3. Iska caabbinta nabaad-guurka: adkaansho sare, dusha sare oo is haysta, walxo yaryar.

4. Iska caabbinta daxalka: aashitada, alkali, milixda iyo walxaha dabiiciga ah.

Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC

SiC-CVD Sifooyinka
Qaab-dhismeedka Crystal	Marxaladda FCC β
Cufnaanta	g/cm ³	3.21
Adkaanta	Adkaanshaha Vickers	2500
Cabbirka Badarka	μm	2~10
Nadiifinta Kiimikada	%	99.99995
Awoodda Kulaylka	J·kg-1 ·K-1	640
Heerkulka Sublimation	℃	2700
Xoogga Felexural	MPa (RT 4-dhibcood)	415
Modulus-ka Young	Gpa (4pt laab, 1300℃)	430
Ballaarinta Kulaylka (CTE)	10-6K-1	4.5
Gudbinta kulaylka	(W/mK)	300