He taputapu pikau kawenga te poti wafer silicon carbide mō ngā wafer, e whakamahia ana i roto i ngā tukanga tohatoha o te rā me te semiconductor. He āhuatanga ōna pēnei i te ātete ki te kakahu, te ātete ki te waikura, te ātete ki te pānga pāmahana teitei, te ātete ki te pupuhi plasma, te kaha pikau pāmahana teitei, te kawe wera teitei, te tohatoha wera teitei, me te whakamahinga roa e kore e ngāwari ki te piko me te whakarerekē. Ka whakamahia e tā mātou kamupene he rauemi silicon carbide parakore teitei hei whakarite i te roa o te ratonga, ā, ka whakaratohia he hoahoa ritenga, tae atu ki ngā momo poti wafer poutū me te whakapae.
Pepa Raraunga Rauemi
| 材料Rauemi | R-SiC |
| 使用温度Te pāmahana mahi (°C) | 1600°C ( 氧化气氛 Taiao whakapouri)1700°C ( 还原气氛 Te taiao whakaheke) |
| SiC含量SiC ihirangi (%) | > 99 |
| 自由Si 含量Koreutu Si ihirangi (%) | < 0.1 |
| 体积密度Te mātotorutanga papatipu (g/cm3) | 2.60-2.70 |
| 气孔率Te āhua o te pūngao (%) | < 16 |
| 抗压强度Kaha kuru (MPa) | > 600 |
| 常温抗弯强度Kaha piko matao (MPa) | 80-90 (20°C) |
| 高温抗弯强度Kaha piko wera (MPa) | 90-100 (1400°C) |
| 热膨胀系数Ngā whakarea roha wera @1500°C (10-6/°C) | 4.70 |
| 导热系数Te kawe wera @1200°C (W/m•K) | 23 |
| 杨氏模量Te tauwehenga pūmau (GPa) | 240 |
| 抗热震性Ātete ru wera | 很好Tino pai |
Ningbo VET Energy Technology Co., Ltdhe umanga hangarau-teitei e arotahi ana ki te whakaputa me te hoko i ngā rauemi matatau teitei, ngā rauemi me te hangarautae atu kite karāpeti, te karāpeti silicon, te uku, te maimoatanga mata me ērā atu mea. E whakamahia whānuitia ana ēnei hua i roto i te photovoltaic, te semiconductor, te pūngao hou, te whakarewa, me ērā atu mea.
Nō ngā umanga rangahau ā-rohe runga rawa atu tā mātou tīma hangarau, ā, ka taea e rātou te whakarato i ngā otinga rauemi ngaio ake.māu.
Nau mai haere mai ki tō mātou wheketere, kia kōrero anō tātou!
