SiC coating grafite MOCVD Wafer carriers, Grafite Susceptors zoSiC Epitaxy,
Ibikoresho bitanga karuboni, Ibikoresho byo gusunika amenyo bya grafiti, Ibikoresho bishyigikira grafiti, Umukozi wo mu bwoko bwa MOCVD, SiC Epitaxy, Ibikoresho byo gusukura ifu,

Ibyiza byihariye by’ibikoresho byacu bya grafiti bifite SiC birimo ubuziranenge bukabije, irangi rihuye neza kandi rimara igihe kirekire. Bifite kandi ubushobozi bwo kudakoresha imiti myinshi ndetse n’ubushyuhe burambye.

Gusiga SiC kuri grafiti substrate yo gukoresha muri Semiconductor bitanga igice gifite ubuziranenge buhebuje kandi kirwanya ikirere gishyushya ogisijeni.
CVD SiC cyangwa CVI SiC bishyirwa kuri Graphite y'ibice byoroshye cyangwa bigoye gushushanya. Gusiga bishobora gushyirwaho ubugari butandukanye no ku bice binini cyane.

Ibiranga:
· Ubudahangarwa bwiza cyane n'ubushyuhe
· Ubudahangarwa bwiza cyane bwo guhangana n'ihungabana
· Ubudahangarwa bwiza cyane bw'ibinyabutabire
· Ubuziranenge Bukomeye cyane
· Kuboneka mu buryo bugoye
· Ikoreshwa munsi y'ikirere gitanga ogisijeni

Porogaramu:

Imiterere isanzwe y'ibikoresho bya grafiti by'ibanze:

Ibikoresho bitanga karubonin'ibice bya grafiti kuri reactor zose zigezweho za epitaxy. Porogaramu yacu irimo utuzu duto two gufunga imigozi ku bikoresho byakoreshejwe na LPE, utuzu duto twa pancake kuri LPE, CSD, na Gemini, hamwe n'utuzu duto twa single-wafer ku bikoresho byakoreshejwe na ASM. Mu guhuza ubufatanye bukomeye n'ibigo bikomeye bya OEM, ubumenyi mu bikoresho n'ubumenyi mu gukora, SGL itanga igishushanyo cyiza ku ikoreshwa ryawe.