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Saddex farsamooyin oo waaweyn oo loogu talagalay kobaca kiristaalka SiC
Sida ku cad Jaantuska 3aad, waxaa jira saddex farsamo oo waaweyn oo ujeedadoodu tahay in la siiyo kiristaal keli ah oo SiC ah tayo sare leh iyo hufnaan: epitaxy-ga wejiga dareeraha ah (LPE), gaadiidka uumiga jirka (PVT), iyo dhigista uumiga kiimikada heerkulka sare leh (HTCVD). PVT waa hab si fiican loo aasaasay oo lagu soo saaro sinada SiC...Akhriso wax dheeraad ah -
Hordhac kooban oo ku saabsan semiconductor-ka jiilka saddexaad ee GaN iyo tignoolajiyada epitaxial ee la xidhiidha
1. Semiconductor-yada jiilka saddexaad Tiknoolajiyadda semiconductor-ka ee jiilka koowaad waxaa lagu sameeyay iyadoo lagu saleynayo agabka semiconductor-ka sida Si iyo Ge. Waa saldhigga agabka ee horumarinta transistor-yada iyo tignoolajiyada wareegga isku dhafan. Agabka semiconductor-ka ee jiilka koowaad ayaa dhigay...Akhriso wax dheeraad ah -
23.5 bilyan, unicorn-ka weyn ee Suzhou ayaa ku socda IPO
Ka dib 9 sano oo ganacsi-abuur ah, Innoscience waxay ururisay in ka badan 6 bilyan oo yuan guud ahaan maalgelin, qiimeynteeduna waxay gaartay 23.5 bilyan oo yuan oo la yaab leh. Liiska maalgashadayaashu wuxuu u dhexeeyaa tobanaan shirkadood: Fukun Venture Capital, Dongfang Hantida ay dowladdu leedahay, Suzhou Zhanyi, Wujian...Akhriso wax dheeraad ah -
Sidee bay alaabada dahaarka leh ee tantalum carbide u xoojiyaan iska caabbinta daxalka ee walxaha?
Dahaarka Tantalum carbide waa tignoolajiyad si caadi ah loo isticmaalo oo lagu daweeyo dusha sare taasoo si weyn u hagaajin karta iska caabbinta daxalka ee agabka. Dahaarka Tantalum carbide waxaa lagu dhejin karaa dusha sare ee substrate-ka iyada oo loo marayo habab kala duwan oo diyaarin ah, sida kaydinta uumiga kiimikada, fiisikiska...Akhriso wax dheeraad ah -
Hordhac ku saabsan semiconductor-ka jiilka saddexaad ee GaN iyo tikniyoolajiyadda epitaxial ee la xiriirta
1. Semiconductor-yada jiilka saddexaad Tiknoolajiyadda semiconductor-ka ee jiilka koowaad waxaa lagu sameeyay iyadoo lagu saleynayo agabka semiconductor-ka sida Si iyo Ge. Waa saldhigga agabka ee horumarinta transistor-yada iyo tignoolajiyada wareegga isku dhafan. Agabka semiconductor-ka ee jiilka koowaad ayaa dhigay f...Akhriso wax dheeraad ah -
Daraasad jilitaan tirakoob ah oo ku saabsan saameynta garaafka daloolsan ee koritaanka kiristaalka carbide ee silicon
Habka aasaasiga ah ee koritaanka kiristaalka SiC waxa loo qaybiyaa sublimation iyo kala daadashada walxaha ceeriin ah heerkulka sare, gaadiidka walxaha wejiga gaaska ee hoos yimaada heerka heerkulka, iyo koritaanka dib-u-cusboonaysiinta walxaha wejiga gaaska ee kiristaalka abuurka. Iyada oo ku saleysan tan,...Akhriso wax dheeraad ah -
Noocyada Garaafiga Gaarka ah
Graphite gaar ah waa nadiifnimo sare, cufnaan sare iyo walxo graphite xoog badan leh waxayna leedahay iska caabin aad u fiican oo daxalka ah, xasillooni heerkul sare iyo koronto-qaadis weyn. Waxaa laga sameeyay graphite dabiici ah ama macmal ah ka dib daaweynta kulaylka heerkulka sare iyo farsamaynta cadaadiska sare...Akhriso wax dheeraad ah -
Falanqaynta qalabka dhigista filimada khafiifka ah - mabaadi'da iyo codsiyada qalabka PECVD/LPCVD/ALD
Kaydinta filimka khafiifka ah waxaa lagu dahaadhaa lakab filim ah oo ku yaal maaddada ugu weyn ee semiconductor-ka. Filimkan waxaa laga samayn karaa agab kala duwan, sida silicon dioxide isku-dhafan oo dahaadh ah, polysilicon semiconductor ah, naxaas bir ah, iwm. Qalabka loo isticmaalo dahaarka waxaa loo yaqaan dhigista filimka khafiifka ah...Akhriso wax dheeraad ah -
Agab muhiim ah oo go'aamiya tayada koritaanka silikoon monocrystalline - goobta kulaylka
Habka koritaanka ee silikoon monocrystalline waxaa si buuxda loogu sameeyaa goobta kulaylka. Goob kuleyl oo wanaagsan ayaa ku habboon hagaajinta tayada kiristaallada waxayna leedahay hufnaan kiristaaleyn oo sareysa. Naqshadeynta goobta kulaylka ayaa inta badan go'aamisa isbeddellada heerkulka...Akhriso wax dheeraad ah
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