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Iindlela ezintathu eziphambili zokukhula kwekristale yeSiC
Njengoko kubonisiwe kuMfanekiso 3, kukho iindlela ezintathu eziphambili ezijolise ekuboneleleni ngekristale enye yeSiC ngomgangatho ophezulu kunye nokusebenza kakuhle: i-epitaxy yesigaba solwelo (i-LPE), ukuthuthwa komphunga ngokwasemzimbeni (i-PVT), kunye ne-high-temperature chemical vapor deposition (i-HTCVD). I-PVT yinkqubo esele imiselwe kakuhle yokuvelisa i-SiC sin...Funda ngokugqithisileyo -
Intshayelelo emfutshane yesizukulwana sesithathu se-semiconductor GaN kunye netekhnoloji ye-epitaxial enxulumeneyo
1. Ii-semiconductors zesizukulwana sesithathu Itekhnoloji ye-semiconductor yesizukulwana sokuqala yaphuhliswa ngokusekelwe kwizixhobo ze-semiconductor ezifana ne-Si kunye ne-Ge. Yisiseko sezinto ezibonakalayo sophuhliso lwee-transistors kunye netekhnoloji yesekethe edibeneyo. Izixhobo ze-semiconductor zesizukulwana sokuqala zabeka...Funda ngokugqithisileyo -
Iibhiliyoni ezingama-23.5, i-super unicorn kaSuzhou iya kwi-IPO
Emva kweminyaka eli-9 yoshishino, i-Innoscience iqokelele imali engaphezulu kweebhiliyoni ezi-6 zeeyuan, kwaye ixabiso layo lifikelele kwi-23.5 yeebhiliyoni zeeyuan. Uluhlu lwabatyali-mali lude njengeenkampani ezininzi: iFukun Venture Capital, iiDongfang State-owned Assets, iSuzhou Zhanyi, iWujian...Funda ngokugqithisileyo -
Iimveliso ezigqunywe nge-tantalum carbide ziyonyusa njani ukumelana nokugqwala kwezinto?
I-Tantalum carbide coating yiteknoloji yonyango lomphezulu esetyenziswa rhoqo enokuphucula kakhulu ukumelana nokugqwala kwezinto. I-Tantalum carbide coating inokuncamathiselwa kumphezulu we-substrate ngeendlela ezahlukeneyo zokulungiselela, ezinje ngokubeka umphunga weekhemikhali, i-physica...Funda ngokugqithisileyo -
Intshayelelo kwisizukulwana sesithathu se-semiconductor GaN kunye netekhnoloji ye-epitaxial enxulumene nayo
1. Ii-semiconductors zesizukulwana sesithathu Itekhnoloji ye-semiconductor yesizukulwana sokuqala yaphuhliswa ngokusekelwe kwizixhobo ze-semiconductor ezifana ne-Si kunye ne-Ge. Yisiseko sezinto ezibonakalayo sophuhliso lwee-transistors kunye netekhnoloji yesekethe edibeneyo. Izixhobo ze-semiconductor zesizukulwana sokuqala zabeka i-f...Funda ngokugqithisileyo -
Uphononongo lokulinganisa ngamanani malunga nefuthe le-graphite enemingxuma ekukhuleni kwekristale ye-silicon carbide
Inkqubo esisiseko yokukhula kwekristale yeSiC yahlulwe ngokwe-sublimation kunye nokubola kwezinto ezikrwada kubushushu obuphezulu, ukuthuthwa kwezinto zesigaba segesi phantsi kwesenzo se-gradient yobushushu, kunye nokukhula kwakhona kwezinto zesigaba segesi kwikristale yembewu. Ngokusekelwe koku,...Funda ngokugqithisileyo -
Iintlobo zeGraphite ekhethekileyo
I-graphite ekhethekileyo icocekile kakhulu, ixinene kakhulu kwaye inamandla aphezulu kwaye inokumelana nokugqwala okugqwesileyo, uzinzo kubushushu obuphezulu kunye nombane omkhulu. Yenziwe nge-graphite yendalo okanye yokwenziwa emva konyango lobushushu obuphezulu kunye nokulungiswa koxinzelelo oluphezulu...Funda ngokugqithisileyo -
Uhlalutyo lwezixhobo zokubeka ifilimu encinci - imigaqo kunye nokusetyenziswa kwezixhobo ze-PECVD/LPCVD/ALD
Ukufakwa kwefilimu encinci kukufaka umaleko wefilimu kwizinto eziphambili ze-semiconductor. Le filimu ingenziwa ngezinto ezahlukeneyo, ezinje nge-insulating compound silicon dioxide, i-semiconductor polysilicon, i-metal copper, njl. Izixhobo ezisetyenziselwa ukugquma zibizwa ngokuba yi-thin film deposition...Funda ngokugqithisileyo -
Izinto ezibalulekileyo ezimisela umgangatho wokukhula kwe-silicon ye-monocrystalline - intsimi yobushushu
Inkqubo yokukhula kwe-monocrystalline silicon yenziwa ngokupheleleyo kwintsimi yobushushu. Intsimi elungileyo yobushushu inceda ekuphuculeni umgangatho weekristale kwaye inamandla aphezulu ekristale. Uyilo lwentsimi yobushushu lumisela kakhulu utshintsho kwi-gradients yobushushu...Funda ngokugqithisileyo
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