Wararka

Maxay yihiin dhibaatooyinka farsamo ee foornada koritaanka kiristaalka silikoon carbide?
by admin 24-06-07
Foornada koritaanka kiristaalka waa qalabka ugu muhiimsan ee koritaanka kiristaalka silikoon carbide. Waxay la mid tahay foornada koritaanka kiristaalka silikoon ee caadiga ah. Qaab-dhismeedka foornada ma aha mid aad u adag. Inta badan waxay ka kooban tahay jirka foornada, nidaamka kuleylinta, habka gudbinta gariiradda...
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Waa maxay cilladaha lakabka epitaxial ee silikoon carbide
by admin 24-06-05
Tiknoolajiyadda asaasiga ah ee koritaanka agabka epitaxial-ka SiC waa marka hore tiknoolajiyadda xakamaynta cilladaha, gaar ahaan tiknoolajiyadda xakamaynta cilladaha oo u nugul cilladaha qalabka ama burburka kalsoonida. Daraasadda habka cilladaha substrate-ka ee ku fidsan epi...
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Tiknoolajiyada koritaanka hadhuudhka ee oxidized iyo epitaxial-Ⅱ
by admin 24-05-30
2. Kobaca filimka khafiifka ah ee Epitaxial Substrate-ku wuxuu bixiyaa lakab taageero jireed ama lakab gudbiye ah oo loogu talagalay aaladaha korontada Ga2O3. Lakabka muhiimka ah ee xiga waa lakabka kanaalka ama lakabka epitaxial ee loo isticmaalo iska caabbinta danabka iyo gaadiidka sideyaasha. Si loo kordhiyo danabka burburka iyo loo yareeyo isku-dhafka...
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Tiknoolajiyada koritaanka epitaxial-ka ee gallium oxide iyo kiristaalka keli ah ee gallium oxide
by admin 24-05-30
Semiconductors-ka ballaaran ee bandgap (WBG) oo ay matalaan silicon carbide (SiC) iyo gallium nitride (GaN) ayaa helay dareen ballaaran. Dadku waxay leeyihiin rajooyin sare oo ku saabsan suurtagalnimada isticmaalka silicon carbide ee baabuurta korontada ku shaqeeya iyo shabakadaha korontada, iyo sidoo kale rajada isticmaalka gallium...
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Waa maxay caqabadaha farsamo ee ka hor imanaya carbide-ka silicon?
by admin 24-05-22
Dhibaatooyinka farsamo ee ku yimaada waferada carbide silicon tayo sare leh ee si joogto ah u soo saara tiro badan oo leh waxqabad deggan waxaa ka mid ah: 1) Maadaama kiristaalo ay u baahan yihiin inay ku koraan jawi heerkul sare leh oo ka sarreeya 2000°C, shuruudaha xakamaynta heerkulka aad bay u sarreeyaan; 2) Maadaama carbide silicon uu leeyahay ...
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Maxay yihiin caqabadaha farsamo ee ka hor imanaya carbide-ka silicon?
by admin 24-05-22
Jiilkii ugu horreeyay ee walxaha semiconductor-ka waxaa matalaya silicon dhaqameed (Si) iyo germanium (Ge), kuwaas oo ah saldhigga wax soo saarka wareegga isku dhafan. Waxaa si weyn loogu isticmaalaa transistors-ka iyo dareemayaasha danab hooseeya, kuwa soo noqnoqda hooseeya, iyo kuwa awoodda hooseeya. In ka badan 90% wax soo saarka semiconductor-ka...
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Sidee loo sameeyaa budada SiC micro?
by admin 24-05-13
Kiristaalka keli ah ee SiC waa walax semiconductor isku-dhafan oo ka kooban laba curiye, Si iyo C, oo leh saamiga stoichiometric ee 1: 1. Adkayntiisu waa tan labaad oo keliya marka loo eego dheemanka. Yaraynta kaarboonka ee habka silicon oksaydhka si loo diyaariyo SiC waxay inta badan ku salaysan tahay qaacidada falcelinta kiimikada ee soo socota...
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Sidee bay lakabyada epitaxial u caawiyaan aaladaha semiconductor-ka?
by admin 24-05-13
Asalka magaca wafer epitaxial Marka hore, aan caan ku noqono fikrad yar: diyaarinta wafer waxay ka kooban tahay laba xiriiriye oo waaweyn: diyaarinta substrate-ka iyo habka epitaxial-ka. Substrate-ku waa wafer laga sameeyay walxo semiconductor ah oo keli ah. Substrate-ku wuxuu si toos ah u geli karaa wax soo saarka wafer-ka...
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Hordhac ku saabsan tignoolajiyada dhigista uumiga kiimikada (CVD) ee khafiifka ah ee dhigista filimka
by admin 24-05-06
Kaydinta Uumiga Kiimikada (CVD) waa tignoolajiyad muhiim ah oo kaydin filim khafiif ah, oo inta badan loo isticmaalo diyaarinta filimaan kala duwan oo shaqeynaya iyo agab lakab khafiif ah, waxaana si weyn loogu isticmaalaa wax soo saarka semiconductor-ka iyo meelaha kale. 1. Mabda'a shaqada ee CVD Habka CVD, horudhac gaas ah (mid ama...
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