Ke alakaʻi nei ka ʻenehana Laser i ka hoʻololi ʻana o ka ʻenehana hana substrate silicon carbide

 

1. ʻIke holoʻokoʻa osubstrate carbide siliconʻenehana hana

ʻO ke ausubstrate carbide silicon ʻO nā ʻanuʻu hana e komo pū ana: ke wili ʻana i ka pōʻai waho, ka ʻoki ʻana, ka chamfering, ka wili ʻana, ka poli ʻana, ka hoʻomaʻemaʻe ʻana, a pēlā aku. ʻO ka ʻoki ʻana he ʻanuʻu koʻikoʻi ia i ka hana ʻana i ka substrate semiconductor a he ʻanuʻu koʻikoʻi i ka hoʻololi ʻana i ka ingot i ka substrate. I kēia manawa, ʻo ka ʻoki ʻana onā mea hoʻohuihui silicon carbideʻo ia ke ʻoki ʻana i ka uea. ʻO ka ʻoki ʻana i ka slurry multi-wire ke ʻano ʻoki uea maikaʻi loa i kēia manawa, akā aia nō nā pilikia o ka maikaʻi ʻoki ʻana a me ka pohō ʻoki nui. E hoʻonui ʻia ka pohō o ka ʻoki ʻana i ka uea me ka hoʻonui ʻana o ka nui o ka substrate, ʻaʻole ia e kūpono i kasubstrate carbide siliconnā mea hana e hoʻokō i ka hōʻemi ʻana i ke kumukūʻai a me ka hoʻomaikaʻi ʻana i ka pono. I ke kaʻina hana o ka ʻoki ʻanaʻO ka carbide silicon 8-'īniha nā substrates, ʻilihune ke ʻano o ka ʻili o ka substrate i loaʻa ma ka ʻoki ʻana i ke kaula, a ʻaʻole maikaʻi nā ʻano helu e like me WARP a me BOW.

ʻO ka ʻoki ʻana he hana koʻikoʻi ia i ka hana ʻana i nā substrate semiconductor. Ke hoʻāʻo mau nei ka ʻoihana i nā ʻano ʻoki hou, e like me ka ʻoki ʻana i ke kaula daimana a me ka wehe ʻana i ka laser. Ua ʻimi nui ʻia ka ʻenehana wehe laser i kēia mau lā. ʻO ka hoʻolauna ʻana o kēia ʻenehana e hōʻemi ana i ka pohō ʻoki a hoʻomaikaʻi i ka pono o ka ʻoki ʻana mai ke kumu loea. Loaʻa i ka hopena wehe laser nā koi kiʻekiʻe no ka pae o ka automation a koi i ka ʻenehana lahilahi e hana pū me ia, kahi e kūlike me ke kuhikuhi hoʻomohala e hiki mai ana o ka hana ʻana i ka substrate silicon carbide. ʻO ka hua ʻoki o ka ʻoki ʻana i ke kaula mortar kuʻuna maʻamau he 1.5-1.6. Hiki i ka hoʻolauna ʻana o ka ʻenehana wehe laser ke hoʻonui i ka hua ʻoki i kahi 2.0 (e nānā i nā lako DISCO). I ka wā e hiki mai ana, i ka piʻi ʻana o ka ʻenehana wehe laser, hiki ke hoʻomaikaʻi hou ʻia ka hua ʻoki; i ka manawa like, hiki i ka wehe laser ke hoʻomaikaʻi nui i ka pono o ka ʻoki ʻana. Wahi a ka noiʻi mākeke, ʻo ke alakaʻi ʻoihana ʻo DISCO e ʻoki i kahi ʻoki ma kahi o 10-15 mau minuke, ʻoi aku ka maikaʻi ma mua o ka ʻoki ʻana i ke kaula mortar o kēia manawa he 60 mau minuke no kēlā me kēia ʻoki.

ʻO nā kaʻina hana o ka ʻoki uea kuʻuna o nā substrates silicon carbide: ʻoki uea-wili ʻino-wili maikaʻi-polishing ʻino a me ka polishing maikaʻi. Ma hope o ka hoʻololi ʻana o ke kaʻina hana laser stripping i ka ʻoki uea, hoʻohana ʻia ke kaʻina hana lahilahi e hoʻololi i ke kaʻina hana wili, kahi e hōʻemi ai i ka nalowale o nā ʻāpana a hoʻomaikaʻi i ka pono o ka hana ʻana. Ua māhele ʻia ke kaʻina hana laser stripping o ka ʻoki ʻana, wili a me ka polishing o nā substrates silicon carbide i ʻekolu mau ʻanuʻu: laser surface scanning-substrate stripping-ingot flattening: ʻo ka laser surface scanning ka hoʻohana ʻana i nā pulse laser ultrafast e hana i ka ʻili o ka ingot e hana i kahi papa i hoʻololi ʻia i loko o ka ingot; ʻo ka substrate stripping ka hoʻokaʻawale ʻana i ka substrate ma luna o ka papa i hoʻololi ʻia mai ka ingot ma o nā ʻano kino; ʻo ka ingot flattening ka wehe ʻana i ka papa i hoʻololi ʻia ma ka ʻili o ka ingot e hōʻoia i ka palahalaha o ka ʻili ingot.
Kaʻina hana hoʻohemo laser Silicon carbide

 

2. Ka holomua honua ma ka ʻenehana hoʻohemo laser a me nā ʻoihana komo ʻoihana

Ua hoʻohana mua ʻia ke kaʻina hana hoʻohemo laser e nā ʻoihana o nā ʻāina ʻē: I ka makahiki 2016, ua hoʻomohala ʻo DISCO o Iapana i kahi ʻenehana ʻoki laser hou ʻo KABRA, kahi e hana ai i kahi papa hoʻokaʻawale a hoʻokaʻawale i nā wafers ma kahi hohonu i kuhikuhi ʻia ma ka hoʻomālamalama mau ʻana i ka ingot me ka laser, hiki ke hoʻohana ʻia no nā ʻano ingot SiC like ʻole. I Nowemapa 2018, ua loaʻa iā Infineon Technologies ʻo Siltectra GmbH, kahi hoʻomaka ʻoki wafer, no 124 miliona euros. Ua hoʻomohala ka mea hope i ke kaʻina hana Cold Split, kahi e hoʻohana ai i ka ʻenehana laser i hoʻopaʻa ʻia e wehewehe i ka laulā māhele, uhi i nā mea polymer kūikawā, ka ʻōnaehana hoʻomalu i ke kaumaha i hoʻoulu ʻia e ka hoʻoluʻu ʻana, hoʻokaʻawale pololei i nā mea, a wili a hoʻomaʻemaʻe e hoʻokō i ka ʻoki wafer.

I nā makahiki i hala iho nei, ua komo pū kekahi mau ʻoihana kūloko i ka ʻoihana lako hana laser stripping: ʻo nā ʻoihana nui ʻo Han's Laser, Delong Laser, West Lake Instrument, Universal Intelligence, China Electronics Technology Group Corporation a me ka Institute of Semiconductors of the Chinese Academy of Sciences. I waena o lākou, ua lōʻihi ka hoʻolālā ʻana o nā ʻoihana i helu ʻia ʻo Han's Laser lāua ʻo Delong Laser, a ke hōʻoia ʻia nei kā lākou huahana e nā mea kūʻai aku, akā he nui nā laina huahana o ka ʻoihana, a ʻo nā lako hana laser stripping hoʻokahi wale nō o kā lākou ʻoihana. Ua hoʻokō nā huahana o nā hōkū piʻi e like me West Lake Instrument i nā hoʻouna kauoha kūhelu; ua hoʻokuʻu pū ʻo Universal Intelligence, China Electronics Technology Group Corporation 2, ka Institute of Semiconductors of the Chinese Academy of Sciences a me nā ʻoihana ʻē aʻe i ka holomua o nā lako.

 

3. Nā kumu hoʻokele no ka hoʻomohala ʻana i ka ʻenehana wehe laser a me ke ʻano o ka hoʻolauna ʻana o ka mākeke

ʻO ka hoʻemi ʻana o ke kumukūʻai o nā substrates silicon carbide 6-ʻīniha e hoʻoulu ai i ka hoʻomohala ʻana o ka ʻenehana wehe laser: I kēia manawa, ua hāʻule ke kumukūʻai o nā substrates silicon carbide 6-ʻīniha ma lalo o 4,000 yuan/ʻāpana, e hoʻokokoke ana i ke kumukūʻai o kekahi mau mea hana. Loaʻa i ke kaʻina hana wehe laser kahi helu hua kiʻekiʻe a me ka loaʻa kālā ikaika, kahi e hoʻoulu ai i ka wikiwiki o ke komo ʻana o ka ʻenehana wehe laser e hoʻonui.

ʻO ka lahilahi ʻana o nā substrates silicon carbide 8-'īniha ke kumu o ka hoʻomohala ʻana o ka ʻenehana wehe laser: ʻO ka mānoanoa o nā substrates silicon carbide 8-'īniha i kēia manawa he 500um, a ke ulu nei i kahi mānoanoa o 350um. ʻAʻole kūpono ke kaʻina hana ʻoki uea i ka hana ʻana o ka silicon carbide 8-'īniha (ʻaʻole maikaʻi ka ʻili o ka substrate), a ua hōʻino nui ʻia nā waiwai BOW a me WARP. Manaʻo ʻia ka wehe laser he ʻenehana hana pono no ka hana ʻana o ka substrate silicon carbide 350um, kahi e hoʻonui ai i ka wikiwiki o ka komo ʻana o ka ʻenehana wehe laser.

Nā Manaʻolana o ka Mākeke: Loaʻa i nā lako hana hoʻohemo laser substrate SiC ka pōmaikaʻi mai ka hoʻonui ʻia ʻana o ka 8-'īniha SiC a me ka hoʻemi ʻana i ke kumukūʻai o ka 6-'īniha SiC. Ke kokoke mai nei ke kiko koʻikoʻi o ka ʻoihana o kēia manawa, a e wikiwiki nui ʻia ka hoʻomohala ʻana o ka ʻoihana.