Itekhnoloji yelaser ikhokela utshintsho kwitekhnoloji yokucubungula i-silicon carbide substrate

 

1. Isishwankathelo seisiseko se-silicon carbideiteknoloji yokucubungula

Eyangokuisiseko se-silicon carbide Amanyathelo okucubungula aquka: ukugawula isangqa esingaphandle, ukusika, ukugawula, ukupolisha, ukucoca, njl. Ukugawula linyathelo elibalulekileyo ekucubunguleni i-semiconductor substrate kunye nenyathelo elibalulekileyo ekuguquleni i-ingot ibe yi-substrate. Okwangoku, ukusikaii-substrates ze-silicon carbideikakhulu kukunqumla ucingo. Ukusika i-slurry eneengcingo ezininzi yeyona ndlela ilungileyo yokusika ucingo okwangoku, kodwa kusekho iingxaki zomgangatho ophantsi wokusika kunye nokulahleka okukhulu kokusika. Ukulahleka kokusika ucingo kuya kwanda ngokonyuka kobukhulu be-substrate, nto leyo engayi kuncedayoisiseko se-silicon carbideabavelisi ukuze bafezekise ukunciphisa iindleko kunye nokuphucula ukusebenza kakuhle. Kwinkqubo yokusikaI-silicon carbide ye-intshi ezi-8 ii-substrates, imilo yomphezulu we-substrate efunyenwe ngokusika ucingo ayilunganga, kwaye iimpawu zamanani ezifana ne-WARP kunye ne-BOW azilunganga.

Ukusila linyathelo elibalulekileyo ekwenzeni i-semiconductor substrate. Eli shishini lihlala lizama iindlela ezintsha zokusika, ezinje ngokusika i-diamond wire kunye nokusila i-laser. Itekhnoloji yokusila i-laser ibisoloko ifunwa kakhulu kutshanje. Ukwaziswa kwale teknoloji kunciphisa ukulahleka kokusila kwaye kuphucula ukusebenza kakuhle kokusila ngokwemigaqo yobugcisa. Isisombululo sokusila i-laser sineemfuno eziphezulu kwinqanaba lokuzenzekelayo kwaye sifuna itekhnoloji yokuncitshiswa ukuze isebenzisane nayo, ehambelana nesikhokelo sophuhliso lwexesha elizayo lokucubungula i-silicon carbide substrate. Isivuno sesilayi sokusila i-mortar wire yendabuko ngokubanzi yi-1.5-1.6. Ukwaziswa kwetekhnoloji yokusila i-laser kunokunyusa isivuno sesilayi ukuya malunga ne-2.0 (jonga izixhobo zeDISCO). Kwixesha elizayo, njengoko ukuvuthwa kwetekhnoloji yokusila i-laser stripping kuyanda, isivuno sesilayi sinokuphucuka ngakumbi; kwangaxeshanye, ukusila i-laser kunokuphucula kakhulu ukusebenza kakuhle kokusila. Ngokophando lwemarike, inkokheli yeshishini iDISCO inqumla isilayi malunga nemizuzu eli-10-15, esebenza ngcono kakhulu kunokusikwa kwe-mortar wire okwangoku kwemizuzu engama-60 ngesilayi.

Amanyathelo enkqubo yokusikwa kwentambo yendabuko ye-silicon carbide substrates ngala: ukusika ucingo-ukusikwa okurhabaxa-ukusikwa okucolekileyo-ukupholisha okurhabaxa kunye nokupholisha okucolekileyo. Emva kokuba inkqubo yokususa i-laser ithathe indawo yokusika intambo, inkqubo yokunciphisa isetyenziswa ukutshintsha inkqubo yokugaya, nto leyo enciphisa ukulahleka kwezilayi kwaye iphucule ukusebenza kakuhle kokucubungula. Inkqubo yokususa i-laser yokusika, ukugaya kunye nokupholisha i-silicon carbide substrates yahlulwe ngamanyathelo amathathu: i-laser surface scanning-substrate stripping-ingot flattening: i-laser surface scanning kukusebenzisa ii-laser pulses ezikhawulezayo ukucubungula umphezulu we-ingot ukwenza umaleko oguquliweyo ngaphakathi kwi-ingot; i-substrate stripping kukwahlula i-substrate engaphezulu komaleko oguquliweyo kwi-ingot ngeendlela ezibonakalayo; i-ingot flattening kukususa umaleko oguquliweyo kumphezulu we-ingot ukuqinisekisa ukuba umphezulu we-ingot uthambile.
Inkqubo yokuhluba i-silicon carbide laser

 

2. Inkqubela phambili yamazwe ngamazwe kubuchwepheshe bokususa i-laser kunye neenkampani ezithatha inxaxheba kushishino

Inkqubo yokuhluba i-laser yamkelwe okokuqala ziinkampani zaphesheya: Ngowama-2016, iDISCO yaseJapan yaphuhlisa iteknoloji entsha yokusika i-laser i-KABRA, eyenza umaleko wokwahlulahlula kwaye yahlula ii-wafers kubunzulu obuthile ngokuhlala ikhanyisa i-ingot nge-laser, enokusetyenziswa kwiintlobo ezahlukeneyo zee-ingots ze-SiC. NgoNovemba ka-2018, i-Infineon Technologies yathenga i-Siltectra GmbH, inkampani entsha yokusika ii-wafer, nge-124 yezigidi zeerandi. Le yokugqibela yaphuhlisa inkqubo ye-Cold Split, esebenzisa iteknoloji ye-laser enelungelo lobunikazi ukuchaza uluhlu lokwahlulahlula, ukugquma izixhobo ezikhethekileyo ze-polymer, uxinzelelo olubangelwa kukupholisa kwenkqubo yokulawula, ukwahlulahlula izixhobo ngokuchanekileyo, kunye nokusila nokucoca ukuze kufezekiswe ukusika ii-wafer.

Kwiminyaka yakutshanje, ezinye iinkampani zasekhaya nazo zingene kushishino lwezixhobo zokukrazula nge-laser: iinkampani eziphambili yiHan's Laser, iDelong Laser, iWest Lake Instrument, iUniversal Intelligence, iChina Electronics Technology Group Corporation kunye ne-Institute of Semiconductors ye-Chinese Academy of Sciences. Phakathi kwazo, iinkampani ezidwelisiweyo iHan's Laser kunye neDelong Laser bezisoloko zicwangcisiwe ixesha elide, kwaye iimveliso zazo ziqinisekiswa ngabathengi, kodwa inkampani ineemveliso ezininzi, kwaye izixhobo zokukrazula nge-laser zezinye zeshishini labo. Iimveliso zeenkwenkwezi ezikhulayo ezifana neWest Lake Instrument zifikelele ekuthunyelweni kwe-odolo ngokusesikweni; i-Universal Intelligence, iChina Electronics Technology Group Corporation 2, i-Institute of Semiconductors ye-Chinese Academy of Sciences kunye nezinye iinkampani nazo zikhuphe inkqubela phambili yezixhobo.

 

3. Izinto ezibangela uphuhliso lwetekhnoloji yokususa i-laser kunye nesingqisho sokungeniswa kwemarike

Ukuncitshiswa kwamaxabiso ee-substrates ze-silicon carbide eziyi-6 intshi kuqhuba uphuhliso lwetekhnoloji yokususa i-laser: Okwangoku, ixabiso lee-substrates ze-silicon carbide eziyi-6 intshi liwe ngaphantsi kwe-4,000 yuan/isiqwenga, lisondela kwixabiso leendleko zabanye abavelisi. Inkqubo yokususa i-laser inezinga eliphezulu lemveliso kunye nenzuzo enamandla, nto leyo eqhuba izinga lokungena kwetekhnoloji yokususa i-laser ukuba linyuke.

Ukuncitshiswa kwe-substrates ze-silicon carbide eziyi-8 intshi kuqhuba uphuhliso lwetekhnoloji yokuqhawula i-laser: Ubukhulu be-substrates ze-silicon carbide eziyi-8 intshi okwangoku yi-500um, kwaye buphuhla buye kububanzi be-350um. Inkqubo yokusika ucingo ayisebenzi ekucwangcisweni kwe-silicon carbide eziyi-8 intshi (umphezulu we-substrate awulungile), kwaye amaxabiso e-BOW kunye ne-WARP anciphile kakhulu. Ukuqhawula i-laser kuthathwa njengetekhnoloji yokucubungula eyimfuneko ekucwangcisweni kwe-substrate ye-silicon carbide eyi-350um, nto leyo eqhuba izinga lokungena kwetekhnoloji yokuqhawula i-laser ukuba linyuke.

Okulindelweyo kwimarike: Izixhobo zokususa i-laser ze-SiC substrate zixhamla ekwandisweni kwe-SiC ye-intshi ezi-8 kunye nokunciphisa iindleko ze-SiC ye-intshi ezi-6. Ingongoma ebalulekileyo kushishino lwangoku isondela, kwaye uphuhliso loshishino luya kukhawuleziswa kakhulu.