Kev siv tshuab laser ua rau kev hloov pauv ntawm silicon carbide substrate processing technology

 

1. Kev Txheeb Xyuas Txogsilicon carbide substratekev siv tshuab ua khoom

Qhov tam sim nosilicon carbide substrate Cov kauj ruam ua tiav suav nrog: sib tsoo lub voj voog sab nraud, txiav, chamfering, sib tsoo, polishing, ntxuav, thiab lwm yam. Kev txiav yog ib kauj ruam tseem ceeb hauv kev ua cov khoom siv semiconductor thiab yog ib kauj ruam tseem ceeb hauv kev hloov cov ingot mus rau lub substrate. Tam sim no, kev txiav ntawmcov khoom siv silicon carbideyog feem ntau yog txiav hlau. Kev txiav ntau hlau slurry yog txoj kev txiav hlau zoo tshaj plaws tam sim no, tab sis tseem muaj teeb meem ntawm kev txiav tsis zoo thiab kev poob loj. Kev poob ntawm kev txiav hlau yuav nce ntxiv nrog rau qhov nce ntawm qhov loj ntawm cov substrate, uas tsis zoo rausilicon carbide substratecov chaw tsim khoom kom ua tiav kev txo nqi thiab kev txhim kho kev ua haujlwm. Nyob rau hauv tus txheej txheem ntawm kev txiav8-nti silicon carbide cov khoom siv hauv av, qhov zoo li ntawm cov substrate uas tau los ntawm kev txiav hlau tsis zoo, thiab cov yam ntxwv ntawm tus lej xws li WARP thiab BOW tsis zoo.

Kev txiav yog ib kauj ruam tseem ceeb hauv kev tsim cov khoom siv semiconductor substrate. Kev lag luam niaj hnub sim cov txheej txheem txiav tshiab, xws li kev txiav hlau pob zeb diamond thiab kev txiav laser. Cov thev naus laus zis txiav laser tau raug nrhiav ntau heev tsis ntev los no. Kev qhia txog cov thev naus laus zis no txo ​​qhov kev poob ntawm kev txiav thiab txhim kho kev txiav zoo los ntawm cov ntsiab cai kev siv tshuab. Cov kev daws teeb meem txiav laser muaj qhov xav tau siab rau qib kev ua haujlwm tsis siv neeg thiab xav tau cov thev naus laus zis thinning los koom tes nrog nws, uas yog nyob rau hauv kab nrog kev coj ua yav tom ntej ntawm kev ua cov khoom siv silicon carbide substrate. Cov txiaj ntsig ntawm kev txiav hlau mortar ib txwm yog 1.5-1.6. Kev qhia txog cov thev naus laus zis txiav laser tuaj yeem ua rau cov txiaj ntsig ntawm kev txiav mus txog li 2.0 (saib cov khoom siv DISCO). Yav tom ntej, thaum kev loj hlob ntawm cov thev naus laus zis txiav laser nce ntxiv, cov txiaj ntsig ntawm kev txiav yuav raug txhim kho ntxiv; tib lub sijhawm, kev txiav laser kuj tseem tuaj yeem txhim kho qhov ua tau zoo ntawm kev txiav. Raws li kev tshawb fawb kev lag luam, tus thawj coj hauv kev lag luam DISCO txiav ib daim hauv li 10-15 feeb, uas ua haujlwm tau zoo dua li kev txiav hlau mortar tam sim no ntawm 60 feeb ib daim.

Cov kauj ruam ntawm kev txiav hlau ib txwm muaj ntawm cov khoom siv silicon carbide yog: txiav hlau-sib tsoo ntxhib-sib tsoo zoo-sib tsoo ntxhib thiab sib tsoo zoo. Tom qab cov txheej txheem laser stripping hloov cov hlau txiav, cov txheej txheem thinning yog siv los hloov cov txheej txheem sib tsoo, uas txo qhov poob ntawm cov hlais thiab txhim kho kev ua haujlwm zoo. Cov txheej txheem laser stripping ntawm kev txiav, sib tsoo thiab polishing ntawm silicon carbide substrates yog muab faib ua peb kauj ruam: laser surface scanning-substrate stripping-ingot flattening: laser surface scanning yog siv ultrafast laser pulses los ua cov txheej txheem ntawm cov ingot los tsim ib txheej hloov kho hauv cov ingot; substrate stripping yog cais cov substrate saum toj no txheej hloov kho ntawm cov ingot los ntawm cov txheej txheem lub cev; ingot flattening yog tshem tawm cov txheej hloov kho ntawm qhov chaw ntawm cov ingot kom ntseeg tau tias qhov tiaj tus ntawm cov ingot nto.
Cov txheej txheem laser stripping silicon carbide

 

2. Kev nce qib thoob ntiaj teb hauv kev siv tshuab laser stripping thiab cov tuam txhab koom nrog kev lag luam

Cov txheej txheem laser stripping tau txais thawj zaug los ntawm cov tuam txhab txawv teb chaws: Xyoo 2016, Nyiv Pooj DISCO tau tsim cov txheej txheem laser slicing tshiab KABRA, uas tsim cov txheej sib cais thiab cais cov wafers ntawm qhov tob uas tau teev tseg los ntawm kev siv laser tas li rau cov ingot, uas tuaj yeem siv rau ntau hom SiC ingots. Thaum Lub Kaum Ib Hlis 2018, Infineon Technologies tau yuav Siltectra GmbH, lub tuam txhab pib txiav wafer, rau 124 lab euros. Qhov kawg tau tsim cov txheej txheem Cold Split, uas siv cov thev naus laus zis laser patented los txhais qhov ntau thiab tsawg ntawm kev sib cais, txheej cov ntaub ntawv polymer tshwj xeeb, tswj lub kaw lus txias ua rau muaj kev ntxhov siab, faib cov ntaub ntawv kom raug, thiab sib tsoo thiab ntxuav kom ua tiav kev txiav wafer.

Nyob rau xyoo tas los no, qee lub tuam txhab hauv tsev kuj tau nkag mus rau hauv kev lag luam khoom siv laser stripping: cov tuam txhab tseem ceeb yog Han's Laser, Delong Laser, West Lake Instrument, Universal Intelligence, China Electronics Technology Group Corporation thiab Lub Koom Haum ntawm Semiconductors ntawm Suav Academy of Sciences. Ntawm lawv, cov tuam txhab teev npe Han's Laser thiab Delong Laser tau nyob rau hauv layout ntev, thiab lawv cov khoom tau raug txheeb xyuas los ntawm cov neeg siv khoom, tab sis lub tuam txhab muaj ntau cov kab khoom, thiab cov khoom siv laser stripping tsuas yog ib qho ntawm lawv cov lag luam. Cov khoom ntawm cov hnub qub sawv xws li West Lake Instrument tau ua tiav kev xa khoom raug cai; Universal Intelligence, China Electronics Technology Group Corporation 2, Lub Koom Haum ntawm Semiconductors ntawm Suav Academy of Sciences thiab lwm lub tuam txhab kuj tau tso tawm cov khoom siv kev nce qib.

 

3. Cov yam tseem ceeb uas ua rau kev tsim cov tshuab laser stripping thiab lub suab ntawm kev qhia txog kev lag luam

Tus nqi txo qis ntawm 6-nti silicon carbide substrates tsav txoj kev loj hlob ntawm laser stripping technology: Tam sim no, tus nqi ntawm 6-nti silicon carbide substrates tau poob qis dua 4,000 yuan / daim, ze rau tus nqi ntawm qee cov chaw tsim khoom. Cov txheej txheem laser stripping muaj cov txiaj ntsig siab thiab muaj txiaj ntsig zoo, uas tsav tus nqi nkag mus ntawm laser stripping technology kom nce ntxiv.

Qhov kev nyias nyias ntawm 8-nti silicon carbide substrates tsav txoj kev loj hlob ntawm laser stripping technology: Lub thickness ntawm 8-nti silicon carbide substrates tam sim no yog 500um, thiab tab tom txhim kho mus rau qhov tuab ntawm 350um. Cov txheej txheem txiav hlau tsis ua haujlwm zoo hauv 8-nti silicon carbide processing (qhov chaw substrate tsis zoo), thiab BOW thiab WARP tus nqi tau poob qis heev. Laser stripping yog suav tias yog ib qho kev tsim nyog rau 350um silicon carbide substrate processing, uas tsav tus nqi nkag mus ntawm laser stripping technology kom nce ntxiv.

Kev cia siab ntawm kev ua lag luam: Cov khoom siv laser stripping SiC substrate tau txais txiaj ntsig los ntawm kev nthuav dav ntawm 8-nti SiC thiab kev txo nqi ntawm 6-nti SiC. Lub sijhawm tseem ceeb hauv kev lag luam tam sim no tab tom los txog, thiab kev txhim kho ntawm kev lag luam yuav raug ua kom nrawm heev.