Ubuchwepheshe be-laser buhola ekuguqulweni kobuchwepheshe bokucubungula i-silicon carbide substrate

 

1. Isifinyezo se-i-substrate ye-silicon carbideubuchwepheshe bokucubungula

Okwamanjei-substrate ye-silicon carbide Izinyathelo zokucubungula zifaka: ukugaya indilinga engaphandle, ukusika, ukugaya, ukuhlanza, njll. Ukusika kuyisinyathelo esibalulekile ekucubungulweni kwe-semiconductor substrate kanye nesinyathelo esibalulekile ekuguquleni i-ingot ibe yi-substrate. Njengamanje, ukusikai-silicon carbide substratesikakhulukazi ukusika ucingo. Ukusika ucingo olunezintambo eziningi kuyindlela engcono kakhulu yokusika ucingo okwamanje, kodwa kusenezinkinga zekhwalithi yokusika engeyinhle kanye nokulahlekelwa okukhulu kokusika. Ukulahleka kokusika ucingo kuzokhula ngokwanda kosayizi we-substrate, okungasizi ngaluthoi-substrate ye-silicon carbideabakhiqizi ukuze bafinyelele ekunciphiseni izindleko kanye nokuthuthukisa ukusebenza kahle. Enqubweni yokusikaI-silicon carbide engamasentimitha angu-8 izisekelo, ukuma kobuso be-substrate okutholakala ngokusika ucingo akulungile, futhi izici zezinombolo ezifana ne-WARP ne-BOW azilungile.

Ukusika kuyisinyathelo esibalulekile ekukhiqizweni kwe-semiconductor substrate. Imboni ihlala izama izindlela ezintsha zokusika, njengokusika ucingo lwedayimane kanye nokusika nge-laser. Ubuchwepheshe bokusika nge-laser bulokhu bufunwa kakhulu muva nje. Ukwethulwa kwalobu buchwepheshe kunciphisa ukulahleka kokusika futhi kuthuthukisa ukusebenza kahle kokusika kusukela esimisweni sobuchwepheshe. Isixazululo sokususa nge-laser sinezidingo eziphezulu zezinga lokuzenzakalela futhi sidinga ubuchwepheshe bokunciphisa ukuze sibambisane naso, okuhambisana nesiqondiso sentuthuko yesikhathi esizayo sokucutshungulwa kwe-silicon carbide substrate. Isivuno sesilayidi sokusika ucingo lwendabuko ngokuvamile singu-1.5-1.6. Ukwethulwa kobuchwepheshe bokususa nge-laser kungandisa isivuno sesilayidi sibe cishe ngu-2.0 (bheka imishini ye-DISCO). Esikhathini esizayo, njengoba ukuvuthwa kobuchwepheshe bokususa nge-laser kwanda, isivuno sesilayidi singathuthukiswa kakhulu; ngesikhathi esifanayo, ukususa nge-laser kungathuthukisa kakhulu ukusebenza kahle kokusika. Ngokusho kocwaningo lwemakethe, umholi wemboni i-DISCO usika isilayi cishe ngemizuzu eyi-10-15, okusebenza kahle kakhulu kunokusika ucingo lwe-mortar lwamanje lwemizuzu engama-60 ngesilayi ngasinye.

Izinyathelo zenqubo yokusika ucingo lwendabuko lwe-silicon carbide substrates yilezi: ukusika ucingo-ukugaya okuqinile-ukugaya okuncane-ukupholisha okuqinile kanye nokupholisha okuncane. Ngemva kokuba inqubo yokususa i-laser ithathe indawo yokusika ucingo, inqubo yokunciphisa isetshenziswa ukufaka esikhundleni senqubo yokugaya, okunciphisa ukulahleka kwezingcezu futhi kuthuthukise ukusebenza kahle kokucubungula. Inqubo yokususa i-laser yokusika, ukugaya kanye nokupholisha i-silicon carbide substrates ihlukaniswe ngezinyathelo ezintathu: ukuskena ubuso nge-laser-ukususa i-substrate-ukususa i-ingot flattening: ukuskena ubuso nge-laser ukusebenzisa ama-laser pulses asheshayo ukucubungula ubuso be-ingot ukwakha ungqimba olushintshiwe ngaphakathi kwe-ingot; ukususa i-substrate ukuhlukanisa i-substrate ngaphezu kwengqimba eshintshiwe kusuka ku-ingot ngezindlela ezibonakalayo; ukususa i-ingot flattening ukususa ungqimba olushintshiwe ebusweni be-ingot ukuqinisekisa ukuthi ubuso be-ingot buthambile.
Inqubo yokuhlubula i-silicon carbide laser

 

2. Intuthuko yamazwe ngamazwe kwezobuchwepheshe bokukhumula nge-laser kanye nezinkampani ezibambe iqhaza embonini

Inqubo yokususa i-laser yaqala ukwamukelwa yizinkampani zakwamanye amazwe: Ngo-2016, i-DISCO yaseJapan yasungula ubuchwepheshe obusha bokusika i-laser i-KABRA, obakha ungqimba lokuhlukanisa futhi bahlukanise ama-wafers ekujuleni okucacisiwe ngokuqhubeka nokukhanyisa i-ingot nge-laser, engasetshenziswa ezinhlotsheni ezahlukene zama-ingots e-SiC. NgoNovemba 2018, i-Infineon Technologies yathenga i-Siltectra GmbH, inkampani entsha yokusika ama-wafer, ngama-euro ayizigidi ezingu-124. Le nkampani yasungula inqubo ye-Cold Split, esebenzisa ubuchwepheshe be-laser obunelungelo lobunikazi ukuchaza ububanzi bokuhlukaniswa, ukumboza izinto ezikhethekile ze-polymer, ukucindezeleka okubangelwa ukupholisa uhlelo lokulawula, ukuhlukanisa izinto ngokunembile, nokugaya nokuhlanza ukuze kufezwe ukusika ama-wafer.

Eminyakeni yamuva nje, ezinye izinkampani zasekhaya nazo zingene embonini yemishini yokukhipha i-laser: izinkampani eziyinhloko yi-Han's Laser, i-Delong Laser, i-West Lake Instrument, i-Universal Intelligence, i-China Electronics Technology Group Corporation kanye ne-Institute of Semiconductors of the Chinese Academy of Sciences. Phakathi kwazo, izinkampani ezibalwe ohlwini i-Han's Laser kanye ne-Delong Laser bezilokhu zihlelekile isikhathi eside, futhi imikhiqizo yazo iqinisekiswa amakhasimende, kodwa inkampani inemigqa eminingi yemikhiqizo, futhi imishini yokukhipha i-laser ingenye yebhizinisi labo. Imikhiqizo yezinkanyezi ezikhulayo njenge-West Lake Instrument ithole ukuthunyelwa okusemthethweni kwe-oda; i-Universal Intelligence, i-China Electronics Technology Group Corporation 2, i-Institute of Semiconductors ye-Chinese Academy of Sciences kanye nezinye izinkampani nazo zikhiphe intuthuko yemishini.

 

3. Izici eziqhuba ukuthuthukiswa kobuchwepheshe bokuhlubula nge-laser kanye nesigqi sokwethulwa kwemakethe

Ukwehliswa kwentengo yezingxenye ze-silicon carbide ezingamasentimitha angu-6 kuqhuba ukuthuthukiswa kobuchwepheshe bokuhlubula nge-laser: Njengamanje, intengo yezingxenye ze-silicon carbide ezingamasentimitha angu-6 yehle ngaphansi kwama-yuan angu-4,000/ingxenye, okusondela entengo yezindleko zabanye abakhiqizi. Inqubo yokuhlubula nge-laser inezinga eliphezulu lokuvunwa kanye nenzuzo enamandla, okwenza izinga lokungena kobuchwepheshe bokuhlubula nge-laser likhuphuke.

Ukuncipha kwezingxenye ze-silicon carbide ezingamasentimitha angu-8 kuqhuba ukuthuthukiswa kobuchwepheshe bokuhlubula nge-laser: Ubukhulu bezingxenye ze-silicon carbide ezingamasentimitha angu-8 okwamanje bungama-500um, futhi bukhula bube ugqinsi lwama-350um. Inqubo yokusika ucingo ayisebenzi ekucubungulweni kwe-silicon carbide engamasentimitha angu-8 (ubuso be-substrate abulungile), futhi amanani e-BOW ne-WARP anciphe kakhulu. Ukuhlubula nge-laser kubhekwa njengobuchwepheshe bokucubungula obudingekayo bokucubungula i-substrate ye-silicon carbide engamasentimitha angu-350um, okwenza izinga lokungena kobuchwepheshe bokuhlubula nge-laser likhuphuke.

Okulindelwe yimakethe: Imishini yokususa i-laser substrate ye-SiC izuza ekwandisweni kwe-SiC engamasentimitha angu-8 kanye nokwehliswa kwezindleko kwe-SiC engamasentimitha angu-6. Iphuzu elibalulekile embonini yamanje liyasondela, futhi intuthuko yemboni izosheshiswa kakhulu.