Fasahar Laser tana jagorantar canjin fasahar sarrafa kayan silicon carbide

 

1. Bayani game dasilicon carbide substratefasahar sarrafawa

Yanzusilicon carbide substrate Matakan sarrafawa sun haɗa da: niƙa da'irar waje, yanka, chamfering, niƙa, gogewa, tsaftacewa, da sauransu. Yanka muhimmin mataki ne a cikin sarrafa substrate na semiconductor kuma muhimmin mataki ne na canza ingot zuwa substrate. A halin yanzu, yankeabubuwan da aka yi da silicon carbidegalibi yanke waya ne. Yanke slurry mai amfani da waya da yawa shine mafi kyawun hanyar yanke waya a halin yanzu, amma har yanzu akwai matsalolin rashin ingancin yankewa da kuma babban asarar yankewa. Asarar yanke waya zai ƙaru tare da ƙaruwar girman substrate, wanda ba shi da amfani gasilicon carbide substratemasana'antun don cimma rage farashi da inganta inganci. A cikin tsarin yankewaSilikon carbide mai inci 8 substrates, siffar saman substrate da aka samu ta hanyar yanke waya ba ta da kyau, kuma halayen lambobi kamar WARP da BOW ba su da kyau.

Yanka babban mataki ne a masana'antar sinadaran semiconductor substrate. Masana'antar tana ci gaba da gwada sabbin hanyoyin yankewa, kamar yanke waya ta lu'u-lu'u da yanke laser. An yi matukar neman fasahar yanke laser kwanan nan. Gabatar da wannan fasaha yana rage asarar yankewa kuma yana inganta ingancin yankewa daga ka'idar fasaha. Maganin yanke laser yana da manyan buƙatu don matakin sarrafa kansa kuma yana buƙatar fasahar ragewa don yin aiki tare da ita, wanda ya yi daidai da alkiblar ci gaba na sarrafa substrate silicon carbide na gaba. Yawan yanka na yanke waya ta turmi na gargajiya gabaɗaya shine 1.5-1.6. Gabatar da fasahar yanke laser na iya ƙara yawan yanka zuwa kusan 2.0 (duba kayan aikin DISCO). A nan gaba, yayin da balaga na fasahar yanke laser ke ƙaruwa, yawan yanka na iya ƙara inganta; a lokaci guda, yanke laser kuma yana iya inganta ingancin yankewa sosai. A cewar binciken kasuwa, shugaban masana'antar DISCO yana yanke yanki a cikin kimanin mintuna 10-15, wanda ya fi inganci fiye da yanke waya ta turmi na yanzu na mintuna 60 a kowane yanki.

Matakan tsarin yanke waya na gargajiya na abubuwan da aka yi da silicon carbide sune: yanke waya-niƙa mai ƙarfi-niƙa mai kyau-naƙasa mai ƙarfi da kuma gogewa mai kyau. Bayan tsarin yanke waya na laser ya maye gurbin yanke waya, ana amfani da tsarin rage sirara don maye gurbin tsarin niƙa, wanda ke rage asarar yanka da inganta ingancin sarrafawa. Tsarin yankewa, niƙa da gogewa na abubuwan da aka yi da silicon carbide an raba shi zuwa matakai uku: duba saman laser-stripte-ingot flatting: duba saman laser shine amfani da bugun laser mai sauri don sarrafa saman ingot don samar da wani Layer da aka gyara a cikin ingot; cire substrate shine don raba substrate da ke sama da Layer da aka gyara daga ingot ta hanyoyin zahiri; flatting ingot shine don cire Layer da aka gyara akan saman ingot don tabbatar da faɗin saman ingot.
Tsarin cire laser na silicon carbide

 

2. Ci gaban duniya a fannin fasahar cire laser da kamfanonin da ke shiga masana'antu

Kamfanonin ƙasashen waje ne suka fara amfani da tsarin cire laser: A shekarar 2016, kamfanin DISCO na Japan ya ƙirƙiro sabuwar fasahar yanke laser KABRA, wacce ke samar da wani yanki na rabuwa da raba wafers a wani takamaiman zurfin ta hanyar ci gaba da haskaka ingot da laser, wanda za a iya amfani da shi don nau'ikan ingots daban-daban na SiC. A watan Nuwamba na 2018, Infineon Technologies ta sayi Siltectra GmbH, wani kamfani na yanke wafer, akan Yuro miliyan 124. Na ƙarshen ya ƙirƙiro tsarin Cold Split, wanda ke amfani da fasahar laser mai lasisi don ayyana kewayon rabawa, shafa kayan polymer na musamman, sanyaya tsarin sarrafawa, raba kayan daidai, da niƙa da tsaftacewa don cimma yanke wafer.

A cikin 'yan shekarun nan, wasu kamfanonin cikin gida sun shiga masana'antar kayan aikin cire laser: manyan kamfanoni sune Han's Laser, Delong Laser, West Lake Instrument, Universal Intelligence, China Electronics Technology Group Corporation da kuma Institute of Semiconductors na Kwalejin Kimiyya ta China. Daga cikinsu, kamfanonin da aka lissafa kamar Han's Laser da Delong Laser sun daɗe suna aiki, kuma abokan ciniki suna tantance samfuran su, amma kamfanin yana da layukan samfura da yawa, kuma kayan cire laser ɗaya ne kawai daga cikin kasuwancinsu. Samfuran taurari masu tasowa kamar West Lake Instrument sun sami damar jigilar kayayyaki na yau da kullun; Universal Intelligence, China Electronics Technology Group Corporation 2, Institute of Semiconductors na Kwalejin Kimiyya ta China da sauran kamfanoni suma sun fitar da ci gaban kayan aiki.

 

3. Abubuwan da ke haifar da ci gaban fasahar cire laser da kuma yadda kasuwar ke tafiya

Rage farashin kayan silicon carbide masu inci 6 yana haifar da ci gaban fasahar cire laser: A halin yanzu, farashin kayan silicon carbide masu inci 6 ya faɗi ƙasa da yuan 4,000 a kowane yanki, wanda ya kusanto farashin wasu masana'antun. Tsarin cire laser yana da babban ƙimar yawan amfanin ƙasa da kuma riba mai ƙarfi, wanda ke haifar da ƙaruwar yawan shigar fasahar cire laser.

Rage girman sinadarin silicon carbide mai inci 8 yana haifar da ci gaban fasahar cire laser: Kauri na sinadarin silicon carbide mai inci 8 a halin yanzu ya kai 500um, kuma yana tasowa zuwa kauri na 350um. Tsarin yanke waya ba shi da tasiri a sarrafa sinadarin silicon carbide mai inci 8 (faɗin substrate ba shi da kyau), kuma ƙimar BOW da WARP ta lalace sosai. Ana ɗaukar cire laser a matsayin wata fasaha mai mahimmanci don sarrafa sinadarin silicon carbide mai inci 350um, wanda ke haifar da ƙaruwar shigar fasahar cire laser.

Fatan Kasuwa: Kayan aikin cire laser na SiC substrate suna amfana daga faɗaɗa SiC mai inci 8 da rage farashin SiC mai inci 6. Muhimmin batun da ake fuskanta a yanzu a masana'antar yana gabatowa, kuma ci gaban masana'antar zai yi sauri sosai.