Tiknoolajiyada laser-ka ayaa horseedaysa isbeddelka tignoolajiyada wax-soo-saarka substrate-ka silicon carbide

 

1. Dulmar guud oo ku saabsanSubstrate-ka silikoon carbidetiknoolajiyada farsamaynta

HaddaSubstrate-ka silikoon carbide Tallaabooyinka farsamaynta waxaa ka mid ah: shiididda wareegga dibadda, jarista, jarista, shiididda, nadiifinta, iwm. Jarjaridda waa tallaabo muhiim ah oo ku saabsan farsamaynta substrate-ka semiconductor-ka waana tallaabo muhiim ah oo lagu beddelayo ingot-ka substrate-ka. Waqtigan xaadirka ah, jaristasubstrates-ka silikoon carbideinta badan waa jarista siligga. Jarida slurry-ka badan ee fiilooyinka badan leh waa habka ugu wanaagsan ee jarista siligga xilligan, laakiin weli waxaa jira dhibaatooyin tayo xumo iyo luminta jarista oo weyn. Lumitaanka jarista siligga ayaa kordhi doonta marka la kordhiyo cabbirka substrate-ka, taas oo aan ku habboonaynSubstrate-ka silikoon carbidesoosaarayaasha si loo gaaro dhimista kharashka iyo horumarinta hufnaanta.Kaarboohaydrayt silicon ah oo 8-inji ah substrates-ka, qaabka dusha sare ee substrate-ka laga helo jarista siligga waa mid liita, sifooyinka tirooyinka sida WARP iyo BOW-na ma fiicna.

Jarjarintu waa tallaabo muhiim ah oo ku saabsan wax soo saarka substrate-ka semiconductor-ka. Warshadu waxay si joogto ah u tijaabinaysaa habab cusub oo jarista ah, sida jarista siligga dheemanka iyo jarista leysarka. Tiknoolajiyadda jarista leysarka ayaa dhawaan si weyn loo raadinayay. Soo bandhigidda tiknoolajiyaddan waxay yareysaa khasaaraha jarista waxayna hagaajinaysaa hufnaanta jarista iyadoo laga eegayo mabda'a farsamada. Xalka jarista leysarka wuxuu leeyahay shuruudo sare oo loogu talagalay heerka otomaatiga ah waxayna u baahan tahay tiknoolaji khafiifin si ay ula shaqeyso, taas oo la jaanqaadaysa jihada horumarinta mustaqbalka ee habaynta substrate-ka silicon carbide. Soo saarista goynta siligga hoobiyaha dhaqameed guud ahaan waa 1.5-1.6. Soo bandhigidda tiknoolajiyadda jarista leysarka waxay kordhin kartaa wax soo saarka goynta ilaa 2.0 (tixraac qalabka DISCO). Mustaqbalka, marka bislaanshaha tiknoolajiyadda jarista leysarka ay korodho, wax soo saarka goynta ayaa laga yaabaa in si dheeraad ah loo hagaajiyo; isla markaana, jarista leysarka ayaa sidoo kale si weyn u wanaajin karta hufnaanta jarista. Sida laga soo xigtay cilmi-baarista suuqa, hogaamiyaha warshadaha DISCO wuxuu gooyaa goyn qiyaastii 10-15 daqiiqo gudahood, taas oo aad uga waxtar badan jarista siligga hoobiyaha ee hadda jirta oo ah 60 daqiiqo halkii goon.

Tallaabooyinka habka jarista siligga dhaqameed ee substrate-ka silikoon carbide waa: jarista siligga-shiididda-shiididda-shiididda-shiididda-shiididda iyo dhalaalinta fiican. Ka dib marka habka jarista leysarka uu beddelo jarista siligga, habka khafiifinta waxaa loo isticmaalaa in lagu beddelo habka shiididda, taas oo yaraynaysa khasaaraha xaleefyada oo hagaajisa hufnaanta habaynta. Habka jarista leysarka ee jarista, shiididda iyo nadiifinta substrate-ka silikoon carbide waxaa loo qaybiyaa saddex tallaabo: iskaanka dusha sare ee leysarka-shiididda substrate-shiididda-shiididda: iskaanka dusha sare ee leysarka waa in la isticmaalo garaacyo leysar ah oo aad u degdeg badan si loo farsameeyo dusha sare ee ingot si loo sameeyo lakab wax laga beddelay gudaha ingot; jarista substrate-ka waa in la kala saaro substrate-ka ka sarreeya lakabka wax laga beddelay iyo ingot-ka iyadoo la adeegsanayo habab jireed; fidinta ingot waa in laga saaro lakabka wax laga beddelay dusha sare ee ingot si loo hubiyo fidsanaanta dusha sare ee ingot.
Habka xoqidda laysarka carbide ee silicon

 

2. Horumar caalami ah oo laga sameeyay tiknoolajiyada laysarka iyo shirkadaha ka qayb qaadanaya warshadaha

Habka xoqidda laysarka waxaa markii ugu horreysay qaatay shirkadaha dibadda: Sannadkii 2016, DISCO-da Japan waxay soo saartay tiknoolajiyad cusub oo laysarka jarjaraysa oo KABRA ah, taas oo samaysa lakab kala soocid ah oo kala soocaya laysarka qoto dheer iyadoo si joogto ah u iftiiminaysa laysarka laysarka, kaas oo loo isticmaali karo noocyo kala duwan oo laysarka SiC ah. Bishii Nofeembar 2018, Infineon Technologies waxay iibsatay Siltectra GmbH, oo ah shirkad bilow ah oo jarista laysarka, oo ku kacday 124 milyan oo Yuuro. Kii dambe wuxuu sameeyay habka Cold Split, kaas oo isticmaala tignoolajiyada laysarka ee shatiga leh si loo qeexo kala-goynta, loo dahaadho walxaha polymer-ka gaarka ah, cadaadiska qaboojinta nidaamka xakamaynta, si sax ah u kala qaybiya walxaha, iyo si loo gaaro jarista laysarka.

Sannadihii ugu dambeeyay, shirkado gudaha ah ayaa sidoo kale galay warshadaha qalabka laysarka: shirkadaha ugu waaweyn waa Han's Laser, Delong Laser, West Lake Instrument, Universal Intelligence, China Electronics Technology Group Corporation iyo Machadka Semiconductors ee Akadeemiyada Sayniska Shiinaha. Shirkadahaas waxaa ka mid ah Han's Laser iyo Delong Laser, kuwaas oo la qorsheeyay muddo dheer, alaabadoodana waxaa xaqiijinaya macaamiisha, laakiin shirkaddu waxay leedahay khadad badan oo alaab ah, qalabka laysarka laysarkana waa mid ka mid ah ganacsiyadooda. Waxyaabaha xiddigaha soo baxaya sida West Lake Instrument waxay gaareen dalab rasmi ah; Universal Intelligence, China Electronics Technology Group Corporation 2, Machadka Semiconductors ee Akadeemiyada Sayniska Shiinaha iyo shirkado kale ayaa sidoo kale sii daayay horumarka qalabka.

 

3. Arrimaha keena horumarinta tiknoolajiyada xoqidda laysarka iyo laxanka suuqa.

Hoos u dhaca qiimaha ee substrate-ka silicon carbide ee 6-inji ah ayaa horseed u ah horumarinta tiknoolajiyada xoqidda laser-ka: Waqtigan xaadirka ah, qiimaha substrate-ka silicon carbide ee 6-inji ah ayaa hoos uga dhacay 4,000 yuan/xabbo, taasoo u dhow qiimaha kharashka qaar ka mid ah soosaarayaasha. Habka xoqidda laser-ka wuxuu leeyahay heer wax soo saar sare iyo faa'iido xooggan, taas oo horseedaysa in heerka gelitaanka ee tiknoolajiyada xoqidda laser-ka uu kordho.

Khafiifinta substrate-ka carbide-ka silicon ee 8-inji ah ayaa horseedda horumarinta tiknoolajiyada xoqidda laser-ka: Dhumucda substrate-ka carbide-ka silicon ee 8-inji ah hadda waa 500um, waxayna u koraysaa dhumucda 350um. Habka jarista siligga ma aha mid wax ku ool ah farsamaynta carbide-ka silicon ee 8-inji ah (dusha sare ee substrate-ka ma fiicna), qiimayaasha BOW iyo WARP-na si weyn ayay u xumaadeen. Xarigga laser-ka waxaa loo arkaa tignoolajiyad farsamayn oo lagama maarmaan u ah farsamaynta substrate-ka carbide-ka silicon ee 350um ah, taas oo kicisa heerka gelitaanka tignoolajiyada xoqidda laser-ka si uu u kordho.

Fikradaha Suuqa: Qalabka laysarka lagu xoqo ee SiC substrate-ka ayaa ka faa'iideysanaya ballaarinta SiC-ga 8-inch iyo dhimista kharashka SiC-ga 6-inch. Qodobka muhiimka ah ee warshadaha hadda jira ayaa soo dhowaanaya, horumarinta warshadahana si weyn ayaa loo dardargelin doonaa.