Cov khoom siv uas tau coated nrog silicon carbide yoga tus yuam sijkhoom siv hauv ntau yam txheej txheem tsim khoom semiconductor.Peb siv peb cov thev naus laus zis patented los ua cov silicon carbide coated susceptor nrogkev ntshiab siab heev,zootxheejkev sib xwsthiab lub neej ua haujlwm zoo heev, thiabtshuaj lom neeg ua haujlwm tau zoo thiab thermal stability.
VET Zog yog lubChaw tsim khoom tiag tiag ntawm cov khoom siv graphite thiab silicon carbide uas muaj CVD txheej,muaj peev xwm muab khoomntau yamcov khoom siv kho kom haum rau kev lag luam semiconductor thiab photovoltaic. Okoj pab neeg kev tshaj lij los ntawm cov tsev kawm tshawb fawb hauv tsev sab saum toj, tuaj yeem muab cov kev daws teeb meem ntau duarau koj.
Peb pheej tsim cov txheej txheem siab heev los muab cov ntaub ntawv siab dua,thiabtau ua haujlwm tawm ib txoj kev siv tshuab tshwj xeeb uas tau txais patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab lub substrate nruj dua thiab tsis yooj yim tawg.
Fcov yam ntxwv ntawm peb cov khoom:
1. Kev kub siab oxidation tsis kam mus txog 1700℃.
2. Kev huv siab thiabkev sib npaug ntawm thermal
3. Kev tiv thaiv xeb zoo heev: kua qaub, alkali, ntsev thiab cov tshuaj reagents organic.
4. Kev nyuaj siab, qhov chaw me me, cov khoom me me.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua
| CVD SiC薄膜基本物理性能 Cov khoom siv lub cev yooj yim ntawm CVD SiCtxheej | |
| 性质 / Khoom vaj khoom tsev | 典型数值 / Tus nqi ib txwm muaj |
| 晶体结构 / Cov qauv siv lead ua | FCC β theem多晶, 主要为(111) Ib |
| 密度 / Qhov Ceev | 3.21 g/cm³ |
| 硬度 / Qhov nyuaj | 2500 维氏硬度 (500g load) |
| 晶粒大小 / Cov nplej loj | 2 ~ 10μm |
| 纯度 / Kev Ntshiab Tshuaj | 99.99995% |
| Cov duab / Peev Xwm Kub | 640 J·kg-1·K-1 |
| 升华温度 Kub Sublimation | 2700 ℃ |
| 抗弯强度 Lub zog flexural | 415 MPa RT 4-point |
| 杨氏模量 / Cov Modulus Hluas | 430 Gpa 4pt khoov, 1300 ℃ |
| 导热系数 / ThermalKev coj ua | 300W·m-1·K-1 |
| 热膨胀系数 / Kev Nthuav Dav Kub (CTE) | 4.5 × 10-6K-1 |
Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!
