Silicon Carbide Yakafukidzwa neGraphite Susceptor ye LED Etching

Silicon Carbide Yakaputirwa Graphite Susceptor ye LED Etching Mufananidzo Unoratidzwa

Tsananguro pfupi:

Silicon carbide susceptor ye LED etching (SiC tray) chinhu chakakosha che deep silicon etching (ICP etching machine). wafer carrier, inozivikanwawo se wafer carrier, silicon wafer carrier, inozivikanwawo se pocket wafer. Inoshandiswa zvakanyanya mu semiconductor CVD uye vacuum sputtering.

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Ruzivo rweChigadzirwa

Matagi eChigadzirwa

Silicon carbide coated susceptor ndiyoa kiyichikamu chinoshandiswa mumabasa akasiyana-siyana ekugadzira semiconductor.Tinoshandisa tekinoroji yedu ine patent kugadzira susceptor ine silicon carbide yakafukidzwa nekuchena kwakanyanya,kugonakuputirakufananauye hupenyu hwebasa hwakanaka kwazvo, naizvozvowoKuramba kwakasimba kwemakemikari uye kugadzikana kwekupisa.

VET Energy ndiyo iyomugadziri chaiye wezvigadzirwa zve graphite ne silicon carbide zvakagadzirwa neCVD coating,anogona kupazvakasiyana-siyanazvikamu zvakagadzirirwa zve semiconductor uye photovoltaic industry. OChikwata chedu chehunyanzvi chinobva kumasangano makuru ekutsvagisa emuno, chinogona kupa mhinduro dzehunyanzvi.zvako.

Tinogara tichigadzira maitiro epamusoro-soro kuti tipe zvinhu zvepamusoro-soro,uyevakashanda tekinoroji ine patent yakasarudzika, iyo inogona kuita kuti kubatana pakati pekupenda ne substrate kuve kwakasimba uye kusanyanya kupatsanurwa.

FMitemo yezvigadzirwa zvedu:

1. Kudzivirira kupisa kwakanyanya kwe oxidation kusvika 1700℃.
2. Kuchena kwakanyanya uyekufanana kwekupisa
3. Kudzivirira ngura kwakanyanya: acid, alkali, munyu uye organic reagents.
4. Kuoma kwakanyanya, pamusoro pakaoma, zvidimbu zvitete.
5. Hupenyu hwebasa hwakareba uye hwakasimba

CVD SiC薄膜基本物理性能 Hunhu hweCVD SiCkuputira
性质 / Pfuma	典型数值 / Kukosha Kwakajairika
晶体结构 / Chimiro cheKristaro	Chikamu cheFCC β多晶，主要為（111）取向
密度 / Kuwanda kwehuwandu	3.21 g/cm³
硬度 / Kuomarara	2500 维氏硬度 (500g mutoro)
晶粒大小 / Saizi yeZviyo	2 ~ 10μm
纯度 / Kuchena kwemakemikari	99.99995%
热容 / Kugona Kupisa	640 J·kg^-1·K^-1
升华温度 / Kupisa kweSublimation	2700℃
抗弯强度 / Simba reKuchinjika	415 MPa RT ine mapoinzi mana
杨氏模量 / Modulus yeVadiki	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalKufambisa kwemhepo	300W·m^-1·K^-1
热膨胀系数 / Kuwedzera kweThermal (CTE)	4.5×10^-6K^-1