Susceptor-ka Garaafiga ee Silicon Carbide-ka ah ee loogu talagalay Qalin-jabinta LED-ka

Sharaxaad Gaaban:

Susceptor-ka Silicon carbide ee loogu talagalay etching LED (saxanka SiC) waa qalab gaar ah oo loogu talagalay etching silicon qoto dheer (mashiinka etching ICP). sideer wafer ah, oo sidoo kale loo yaqaan sideer wafer ah, sideer silicon wafer ah, oo sidoo kale loo yaqaan sideer jeebka ah. Si ballaaran ayaa loogu isticmaalaa semiconductor CVD iyo sputtering vacuum.

 


Faahfaahinta Badeecada

Calaamadaha Alaabta

Susceptor-ka dahaarka leh ee silikoon carbide waaa furahaqayb loo isticmaalo hababka wax soo saarka semiconductor kala duwan.Waxaan isticmaalnaa tignoolajiyadeena shatiga leh si aan u samayno suuxdinta dahaarka leh ee silicon carbide-ka lehdaahirnimo aad u sarreysa,wanaagsandahaarkamidnimoiyo nolol adeeg oo aad u fiican, sidoo kaleiska caabinta kiimikada sare iyo sifooyinka xasilloonida kulaylka.

Tamarta VET waa Shaki kuma jiro insoo saaraha dhabta ah ee alaabada graphite iyo silicon carbide ee loo habeeyay oo leh dahaarka CVD,bixin karaakala duwanqaybo loo habeeyey warshadaha semiconductor iyo photovoltaic. OKooxda farsamada ee aad ka tirsan tahay waxay ka timaadaa hay'adaha cilmi-baarista ee ugu sarreeya gudaha, waxayna bixin karaan xalal agab xirfadeed oo dheeraad ahadiga.

Waxaan si joogto ah u horumarinnaa habab horumarsan si aan u bixinno agab horumarsan,iyoWaxaan soo saarnay tiknoolajiyad gaar ah oo shati leh, taas oo ka dhigi karta isku xirka u dhexeeya dahaarka iyo substrate-ka mid adag oo aan u nuglaan karin kala-goynta.

Fcuntooyinka alaabtayada:

1. Iska caabinta oksaydhka heerkulka sare ilaa 1700.
2. Nadiifnimo sare iyoisku mid ahaanshaha kulaylka
3. Iska caabin aad u fiican oo daxalka ah: aashitada, alkali, milixda iyo walxaha dabiiciga ah.
4. Adkayn sare, dusha sare oo is haysta, iyo walxo yaryar.
5. Adeeg dheer iyo cimri dheer

CVD SiC薄膜基本物理性能

Sifooyinka aasaasiga ah ee jireed ee CVD SiCdahaarka

性质 / Hantida

典型数值 / Qiimaha Caadiga ah

晶体结构 / Qaab-dhismeedka Crystal

Marxaladda FCC β多晶,主要为(111) 取向

密度 / Cufnaanta

3.21 g/cm³

硬度 / Adkaanta

2500 维氏硬度(500g oo culeys ah

晶粒大小 / Xaddiga Badarka

2 ~ 10μm

纯度 / Nadiifinta Kiimikada

99.99995%

热容 / Awoodda Kulaylka

640 J·kg-1·K-1

升华温度 / Heerkulka Sublimation

2700℃

抗弯强度 / Xoogga Laablaabashada

415 MPa RT 4-dhibcood

杨氏模量 / Modulus-ka Young

430 GPA 4pt laab, 1300℃

导热系数 / ThermalGudbinta

300W·m-1·K-1

热膨胀系数 / Ballaarinta Kulaylka (CTE)

4.5 × 10-6K-1

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